Electronics Production Defects and Analysis, Kuttiyil Thomas
Автор: Kuttiyil Thomas Название: Electronics Production Defects and Analysis ISBN: 9811698236 ISBN-13(EAN): 9789811698231 Издательство: Springer Рейтинг: Цена: 83850.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This book is a unique book capturing defects that are frequently encountered during various fabrication phases of electronic packages. These defects have been analyzed to their root cause and mitigation techniques and presented in the book. The book includes 228 cases with more than 480 color and magnified images of the defects. These defects are covered under eight subheads, viz soldering defects, PCB defects, mounting defects, conformal coating and potting defects, EEE component defects, workmanship defects, defects due to usage of non-FFF components, and defects in CAD layout. The possible reasons for the occurrence of the defects and the methods/practices by which they can be eliminated/mitigated have also been discussed. The chapter "mounting defects" shows the correct approach in the adjacent photograph, so that the users can refer to the right procedures. The book is helpful to those who are involved in the production of electronics packages to familiarize them with the different cases shown carefully and revised frequently. Exposure to the different defects is useful to all who are working in fabrication and quality control to realize a zero-defect product sans much time and investment. The book is valuable for the technical community working for aerospace applications, industry partners in the realization of space programs, aerospace, and high-reliability institutions, various electronic fabrication agencies in the country, engineers and technicians taking up courses in high-reliability soldering and fabrication techniques, and the students.
Автор: Hans-Joachim Queisser; Johann-Martin Spaeth; Haral Название: Point Defects in Semiconductors and Insulators ISBN: 3642627226 ISBN-13(EAN): 9783642627224 Издательство: Springer Рейтинг: Цена: 167700.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: The precedent book with the title "Structural Analysis of Point Defects in Solids: An introduction to multiple magnetic resonance spectroscopy" ap- peared about 10 years ago.
This work presents a comprehensive theory describing atomic diffusion in silicon crystals under strong nonequilibrium conditions caused by ion implantation and interaction with the surface or other interfaces. A set of generalized equations that describe diffusion of impurity atoms and point defects are presented in a form suitable for solving numerically. Based on this theory, partial diffusion models are constructed, and the simulation of many doping processes used in microelectronics is carried out.
Coupled Diffusion of Impurity Atoms and Point Defects in Silicon Crystals is a useful text for researchers, engineers, and advanced students in semiconductor physics, microelectronics, and nanoelectronics. It helps readers acquire a deep understanding of the physics of diffusion and demonstrates the practical application of the theoretical ideas formulated to find cheaper solutions in the course of manufacturing semiconductor devices and integrated microcircuits.
Автор: Edmund G. Seebauer; Meredith C. Kratzer Название: Charged Semiconductor Defects ISBN: 1849968209 ISBN-13(EAN): 9781849968201 Издательство: Springer Рейтинг: Цена: 174130.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: "Charged Defects in Semiconductors" details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors.
Автор: Edmund G. Seebauer; Meredith C. Kratzer Название: Charged Semiconductor Defects ISBN: 1848820585 ISBN-13(EAN): 9781848820586 Издательство: Springer Рейтинг: Цена: 174150.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of `defect engineering`. This book covers the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors.
Автор: Wada, Kazumi Название: Defects in Optoelectronic Materials ISBN: 9056997149 ISBN-13(EAN): 9789056997144 Издательство: Taylor&Francis Рейтинг: Цена: 153120.00 T Наличие на складе: Нет в наличии.
Автор: Fleetwood, Daniel M. Название: Defects in Microelectronic Materials and Devices ISBN: 1420043765 ISBN-13(EAN): 9781420043761 Издательство: Taylor&Francis Рейтинг: Цена: 193950.00 T Наличие на складе: Нет в наличии.
Автор: Tuomisto Filip Название: Characterisation and Control of Defects in Semiconductors ISBN: 1785616552 ISBN-13(EAN): 9781785616556 Издательство: Неизвестно Рейтинг: Цена: 198480.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание:
An up-to-date review of the experimental and theoretical methods used for studying defects in semiconductors, this book focuses on recent developments driven by the requirements of new materials, including nitrides, oxide semiconductors and 2-D semiconductors. Written by an international team, and edited by a highly regarded researcher in the field, the book provides thorough coverage of a variety of characterisation techniques and suggests methods for controlling the defects and hence the properties of semiconductors.
Название: Silicon, Germanium, and Their Alloys ISBN: 1466586648 ISBN-13(EAN): 9781466586642 Издательство: Taylor&Francis Рейтинг: Цена: 193950.00 T Наличие на складе: Нет в наличии.
Автор: Jitendra B. Khare; Wojciech Maly Название: From Contamination to Defects, Faults and Yield Loss ISBN: 146128595X ISBN-13(EAN): 9781461285953 Издательство: Springer Рейтинг: Цена: 113190.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: Given such a high level of investment, it is critical for IC manufacturers to reduce manufacturing costs and get a better return on their investment. The most obvious method of reducing the manufacturing cost per die is to improve manufacturing yield.
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