Defects in Microelectronic Materials and Devices, Fleetwood, Daniel M.
Автор: Li Yan, Goyal Deepak Название: 3D Microelectronic Packaging: From Architectures to Applications ISBN: 9811570922 ISBN-13(EAN): 9789811570926 Издательство: Springer Рейтинг: Цена: 158380.00 T Наличие на складе: Нет в наличии. Описание: This book offers a comprehensive reference guide for graduate students and professionals in both academia and industry, covering the fundamentals, architecture, processing details, and applications of 3D microelectronic packaging.
Автор: Li Yan, Goyal Deepak Название: 3D Microelectronic Packaging: From Fundamentals to Applications ISBN: 3319830864 ISBN-13(EAN): 9783319830865 Издательство: Springer Рейтинг: Цена: 167700.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This volume provides a comprehensive reference for graduate students and professionals in both academia and industry on the fundamentals, processing details, and applications of 3D microelectronic packaging, an industry trend for future microelectronic packages.
Автор: Hans-Joachim Queisser; Johann-Martin Spaeth; Haral Название: Point Defects in Semiconductors and Insulators ISBN: 3642627226 ISBN-13(EAN): 9783642627224 Издательство: Springer Рейтинг: Цена: 167700.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: The precedent book with the title "Structural Analysis of Point Defects in Solids: An introduction to multiple magnetic resonance spectroscopy" ap- peared about 10 years ago.
Автор: Makabe Название: Plasma Electronics ISBN: 1482222051 ISBN-13(EAN): 9781482222050 Издательство: Taylor&Francis Рейтинг: Цена: 209270.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание:
Beyond enabling new capabilities, plasma-based techniques, characterized by quantum radicals of feed gases, hold the potential to enhance and improve many processes and applications. Following in the tradition of its popular predecessor, Plasma Electronics, Second Edition: Applications in Microelectronic Device Fabrication explains the fundamental physics and numerical methods required to bring these technologies from the laboratory to the factory.
Emphasizing computational algorithms and techniques, this updated edition of a popular monograph supplies a complete and up-to-date picture of plasma physics, computational methods, applications, and processing techniques. Reflecting the growing importance of computer-aided approaches to plasma analysis and synthesis, it showcases recent advances in fabrication from micro- and nano-electronics, MEMS/NEMS, and the biological sciences. A helpful resource for anyone learning about collisional plasma structure, function, and applications, this edition reflects the latest progress in the quantitative understanding of non-equilibrium low-temperature plasma, surface processing, and predictive modeling of the plasma and the process. Filled with new figures, tables, problems, and exercises, it includes a new chapter on the development of atmospheric-pressure plasma, in particular microcell plasma, with a discussion of its practical application to improve surface efficiency. The book provides an up-to-date discussion of MEMS fabrication and phase transition between capacitive and inductive modes in an inductively coupled plasma. In addition to new sections on the phase transition between the capacitive and inductive modes in an ICP and MOS-transistor and MEMS fabrications, the book presents a new discussion of heat transfer and heating of the media and the reactor. Integrating physics, numerical methods, and practical applications, this bookequips you with the up-to-date understanding required to scale up lab breakthroughs into industrial innovations.
Название: Defects in Microelectronic Materials and Devices ISBN: 0367386399 ISBN-13(EAN): 9780367386399 Издательство: Taylor&Francis Рейтинг: Цена: 67360.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание:
Uncover the Defects that Compromise Performance and Reliability As microelectronics features and devices become smaller and more complex, it is critical that engineers and technologists completely understand how components can be damaged during the increasingly complicated fabrication processes required to produce them.
A comprehensive survey of defects that occur in silicon-based metal-oxide semiconductor field-effect transistor (MOSFET) technologies, this book also discusses flaws in linear bipolar technologies, silicon carbide-based devices, and gallium arsenide materials and devices. These defects can profoundly affect the yield, performance, long-term reliability, and radiation response of microelectronic devices and integrated circuits (ICs). Organizing the material to build understanding of the problems and provide a quick reference for scientists, engineers and technologists, this text reviews yield- and performance-limiting defects and impurities in the device silicon layer, in the gate insulator, and/or at the critical Si/SiO2 interface. It then examines defects that impact production yield and long-term reliability, including:
Vacancies, interstitials, and impurities (especially hydrogen)
Negative bias temperature instabilities
Defects in ultrathin oxides (SiO2 and silicon oxynitride)
Take A Proactive Approach The authors condense decades of experience and perspectives of noted experimentalists and theorists to characterize defect properties and their impact on microelectronic devices. They identify the defects, offering solutions to avoid them and methods to detect them. These include the use of 3-D imaging, as well as electrical, analytical, computational, spectroscopic, and state-of-the-art microscopic methods. This book is a valuable look at challenges to come from emerging
Автор: Victor Gloumov; Victor A. Perevostchikov; Vladimir Название: Gettering Defects in Semiconductors ISBN: 3642065708 ISBN-13(EAN): 9783642065705 Издательство: Springer Рейтинг: Цена: 204040.00 T Наличие на складе: Есть у поставщика Поставка под заказ.
Автор: Peter Pichler Название: Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon ISBN: 3709172047 ISBN-13(EAN): 9783709172049 Издательство: Springer Рейтинг: Цена: 279500.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon.
This work presents a comprehensive theory describing atomic diffusion in silicon crystals under strong nonequilibrium conditions caused by ion implantation and interaction with the surface or other interfaces. A set of generalized equations that describe diffusion of impurity atoms and point defects are presented in a form suitable for solving numerically. Based on this theory, partial diffusion models are constructed, and the simulation of many doping processes used in microelectronics is carried out.
Coupled Diffusion of Impurity Atoms and Point Defects in Silicon Crystals is a useful text for researchers, engineers, and advanced students in semiconductor physics, microelectronics, and nanoelectronics. It helps readers acquire a deep understanding of the physics of diffusion and demonstrates the practical application of the theoretical ideas formulated to find cheaper solutions in the course of manufacturing semiconductor devices and integrated microcircuits.
Автор: R.A. Levy Название: Microelectronic Materials and Processes ISBN: 0792301544 ISBN-13(EAN): 9780792301547 Издательство: Springer Рейтинг: Цена: 325160.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: Proceedings of the NATO Advanced Study Institute, Il Ciocco, Castelvecchio Pascoli, Italy, June 30-July 11, 1986
Автор: J?rg Schwizer; Michael Mayer; Oliver Brand Название: Force Sensors for Microelectronic Packaging Applications ISBN: 3642060633 ISBN-13(EAN): 9783642060632 Издательство: Springer Рейтинг: Цена: 139750.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: Sensor Design.- Measurement System.- Characterization.- Applications.- Conclusions and Outlook.
Автор: R.A. Levy Название: Microelectronic Materials and Processes ISBN: 0792301471 ISBN-13(EAN): 9780792301479 Издательство: Springer Рейтинг: Цена: 491940.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: Proceedings of the NATO Advanced Study Institute, Il Ciocco, Castelvecchio Pascoli, Italy, June 30-July 11, 1986
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