Electronics Production Defects and Analysis, Kuttiyil Thomas

Автор: Kuttiyil Thomas
Название: Electronics Production Defects and Analysis
ISBN: 9811698260 ISBN-13(EAN): 9789811698262
Издательство: Springer
Рейтинг:
Цена: 83850.00 T
Наличие на складе: Нет в наличии.
Описание: This book is a unique book capturing defects that are frequently encountered during various fabrication phases of electronic packages. These defects have been analyzed to their root cause and mitigation techniques and presented in the book. The book includes 228 cases with more than 480 color and magnified images of the defects. These defects are covered under eight subheads, viz soldering defects, PCB defects, mounting defects, conformal coating and potting defects, EEE component defects, workmanship defects, defects due to usage of non-FFF components, and defects in CAD layout. The possible reasons for the occurrence of the defects and the methods/practices by which they can be eliminated/mitigated have also been discussed. The chapter "mounting defects" shows the correct approach in the adjacent photograph, so that the users can refer to the right procedures. The book is helpful to those who are involved in the production of electronics packages to familiarize them with the different cases shown carefully and revised frequently. Exposure to the different defects is useful to all who are working in fabrication and quality control to realize a zero-defect product sans much time and investment. The book is valuable for the technical community working for aerospace applications, industry partners in the realization of space programs, aerospace, and high-reliability institutions, various electronic fabrication agencies in the country, engineers and technicians taking up courses in high-reliability soldering and fabrication techniques, and the students.

Автор: Hans-Joachim Queisser; Johann-Martin Spaeth; Haral
Название: Point Defects in Semiconductors and Insulators
ISBN: 3642627226 ISBN-13(EAN): 9783642627224
Издательство: Springer
Рейтинг:
Цена: 167700.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The precedent book with the title "Structural Analysis of Point Defects in Solids: An introduction to multiple magnetic resonance spectroscopy" ap- peared about 10 years ago.

Автор: Velichko Oleg
Название: Coupled Diffusion Of Impurity Atoms And Point Defects In Silicon Crystals
ISBN: 1786347156 ISBN-13(EAN): 9781786347152
Издательство: World Scientific Publishing
Рейтинг:
Цена: 142560.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:

This work presents a comprehensive theory describing atomic diffusion in silicon crystals under strong nonequilibrium conditions caused by ion implantation and interaction with the surface or other interfaces. A set of generalized equations that describe diffusion of impurity atoms and point defects are presented in a form suitable for solving numerically. Based on this theory, partial diffusion models are constructed, and the simulation of many doping processes used in microelectronics is carried out.

Coupled Diffusion of Impurity Atoms and Point Defects in Silicon Crystals is a useful text for researchers, engineers, and advanced students in semiconductor physics, microelectronics, and nanoelectronics. It helps readers acquire a deep understanding of the physics of diffusion and demonstrates the practical application of the theoretical ideas formulated to find cheaper solutions in the course of manufacturing semiconductor devices and integrated microcircuits.

Автор: Edmund G. Seebauer; Meredith C. Kratzer
Название: Charged Semiconductor Defects
ISBN: 1848820585 ISBN-13(EAN): 9781848820586
Издательство: Springer
Рейтинг:
Цена: 174150.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of `defect engineering`. This book covers the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors.

Автор: Tatyana Volk; Manfred W?hlecke
Название: Lithium Niobate
ISBN: 3540707654 ISBN-13(EAN): 9783540707653
Издательство: Springer
Рейтинг:
Цена: 156720.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Presents the state of studies of point defects, both intrinsic and extrinsic (impurities and radiation centers) in LiNbO3. This book explains the contribution of intrinsic defects to photoinduced charge transport to the photorefraction.

Автор: Kipp van Schooten
Название: Optically Active Charge Traps and Chemical Defects in Semiconducting Nanocrystals Probed by Pulsed Optically Detected Magnetic Resonance
ISBN: 3319005898 ISBN-13(EAN): 9783319005898
Издательство: Springer
Рейтинг:
Цена: 121110.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book lays the groundwork for further use of Electron Spin Echo Envelop Modulation (ESEEM) and opens the possibility of highly precise chemical fingerprinting. It reveals an astonishingly long memory of spin coherence in semiconductor particles.

Автор: Mohammad Tehranipoor; Ke Peng; Krishnendu Chakraba
Название: Test and Diagnosis for Small-Delay Defects
ISBN: 1489989528 ISBN-13(EAN): 9781489989529
Издательство: Springer
Рейтинг:
Цена: 104480.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book introduces new techniques for detecting and diagnosing small-delay defects in integrated circuits. It details effective and scalable methodologies for screening and diagnosing small-delay defects.

Автор: Kipp van Schooten
Название: Optically Active Charge Traps and Chemical Defects in Semiconducting Nanocrystals Probed by Pulsed Optically Detected Magnetic Resonance
ISBN: 331903328X ISBN-13(EAN): 9783319033280
Издательство: Springer
Рейтинг:
Цена: 87060.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book lays the groundwork for further use of Electron Spin Echo Envelop Modulation (ESEEM) and opens the possibility of highly precise chemical fingerprinting. It reveals an astonishingly long memory of spin coherence in semiconductor particles.

Автор: Jacques Jupille; Geoff Thornton
Название: Defects at Oxide Surfaces
ISBN: 3319380192 ISBN-13(EAN): 9783319380193
Издательство: Springer
Рейтинг:
Цена: 104480.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book presents the basics and characterization of defects at oxide surfaces. It provides a state-of-the-art review of the field, containing information to the various types of surface defects, describes analytical methods to study defects, their chemical activity and the catalytic reactivity of oxides.

Автор: Jitendra B. Khare; Wojciech Maly
Название: From Contamination to Defects, Faults and Yield Loss
ISBN: 0792397142 ISBN-13(EAN): 9780792397144
Издательство: Springer
Рейтинг:
Цена: 130610.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Given such a high level of investment, it is critical for IC manufacturers to reduce manufacturing costs and get a better return on their investment. The most obvious method of reducing the manufacturing cost per die is to improve manufacturing yield.

Автор: Hans-Joachim Queisser; Johann-Martin Spaeth; Haral
Название: Point Defects in Semiconductors and Insulators
ISBN: 3540426957 ISBN-13(EAN): 9783540426950
Издательство: Springer
Рейтинг:
Цена: 232910.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The precedent book with the title "Structural Analysis of Point Defects in Solids: An introduction to multiple magnetic resonance spectroscopy" ap- peared about 10 years ago.

Автор: Bernard Pajot; Bernard Clerjaud
Название: Optical Absorption of Impurities and Defects in Semiconducting Crystals
ISBN: 3642430805 ISBN-13(EAN): 9783642430800
Издательство: Springer
Рейтинг:
Цена: 121890.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This volume outlines how absorption spectroscopy is important to the investigation of deep-level centers introduced in semiconductors and insulators. It also explains how vibrational spectroscopy determines the atomic structure and symmetry of complexes.