Extending Moore`s Law Through Advanced Semiconductor Design and Processing Techniques, Lambrechts, Wynand ; Sinha, Saurabh ; Abdallah, Ja
Автор: Ben U Seng Pan; Rui Paulo da Silva Martins; Jose d Название: Design of Very High-Frequency Multirate Switched-Capacitor Circuits ISBN: 1441938672 ISBN-13(EAN): 9781441938671 Издательство: Springer Рейтинг: Цена: 158380.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: Dedication. Preface. Acknowledgment. List of Abbreviations. List of Figures. List of Tables. 1. Introduction. 1. High-Frequency Integrated Analog Filtering. 2. Multirate Switched-Capacitor Circuit Techniques. 3. Sampled-Data Interpolation Techniques. 4. Research Goals and Design Challenges. 2. Improved Multirate Polyphase-Based Interpolation Structures. 1. Introduction. 2. Conventional and Improved Analog Interpolation. 3. Polyphase Structures for Optimum-class Improved Analog Interpolation. 4. Multirate ADB Polyphase Structures. 5. Low-Sensitivity Multirate IIR Structures. 6. Summary. 3. Practical Multirate SC Circuit Design Considerations. 1.Introduction. 2. Power Consumption Analysis. 3. Capacitor-Ratio Sensitivity Analysis. 4. Finite Gain & Bandwidth Effects. 5. Input-Referred Offset Effects. 6. Phase Timing-Mismatch Effects. 7. Noise Analysis. 8. Summary. 4. Gain- and Offset-Compensation for Multirate SC Circuits. 1. Introduction. 2. Autozeroing and Correlated-Double Sampling Techniques. 3. AZ and CDS SC Delay Blocks with Mismatch-Free Property. 4. AZ and CDS SC Accumulators. 5. Design Examples. 6. Speed and Power Considerations. 7. Summary. 5. Design of a 108 MHz Multistage SC Video Interpolating Filter. 1. Introduction. 2. Optimum Architecture Design. 3. Circuit Design. 4. Circuit Layout. 5. Simulation Results. 6. Summary. 6. Design of a 320 MHz Frequency-Translated SC Bandpass Interpolating Filter. 1. Introduction. 2. Prototype System-Level Design. 3. Prototype Circuit-Level Design. 4. Layout Considerations. 5. Simulation Results. 6. Summary. 7. Experimental Results. 1. Introduction. 2. PCB Design. 3. Measurement Setup and Results. 4. Summary. 8. Conclusions. Appendix 1.Timing-Mismatch Errors with Nonuniformly Holding Effects. 1. Spectrum Expressions for IU-ON(SH) and IN-CON(SH). 2. Closed Form SINAD Expression for IU-ON(SH) and IN-CON(SH). 3. Closed Form SFDR Expression for IN-CON(SH) systems. 4. Spectrum Correlation of IN-OU(IS) and IU-ON(SH). Appendix 2. Noise Analysis For SC ADB Delay Line and Polyphase Subfilters. 1. Output Noise of ADB Delay Line. 2. Output Noise of Polyphase Subfilters. Appendix 3. Gain, Phase and Offset Errors for GOC MF SC Delay Circuit i and j. 1. GOC MF SC Delay Circuit i. 2. GOC MF SC Delay Circuit j.
Автор: Chaira, Tamalika Название: Medical Image Processing ISBN: 0367575965 ISBN-13(EAN): 9780367575960 Издательство: Taylor&Francis Рейтинг: Цена: 50010.00 T Наличие на складе: Есть у поставщика Поставка под заказ.
Автор: Buccella Pietro, Stefanucci Camillo, Kayal Maher Название: Parasitic Substrate Coupling in High Voltage Integrated Circuits: Minority and Majority Carriers Propagation in Semiconductor Substrate ISBN: 3030089762 ISBN-13(EAN): 9783030089764 Издательство: Springer Рейтинг: Цена: 93160.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This book introduces a new approach to model and predict substrate parasitic failures in integrated circuits with standard circuit design tools.The injection of majority and minority carriers in the substrate is a recurring problem in smart power ICs containing high voltage, high current switching devices besides sensitive control, protection and signal processing circuits.The injection of parasitic charges leads to the activation of substrate bipolar transistors. This book explores how these events can be evaluated for a wide range of circuit topologies. To this purpose, new generalized devices implemented in Verilog-A are used to model the substrate with standard circuit simulators. This approach was able to predict for the first time the activation of a latch-up in real circuits through post-layout SPICE simulation analysis.
Discusses substrate modeling and circuit-level simulation of parasitic bipolar device coupling effects in integrated circuits; Includes circuit back-annotation of the parasitic lateral n-p-n and vertical p-n-p bipolar transistors in the substrate; Uses Spice for simulation and characterization of parasitic bipolar transistors, latch-up of the parasitic p-n-p-n structure, and electrostatic discharge (ESD) protection devices; Offers design guidelines to reduce couplings by adding specific protections.
Автор: P. Perez Rodriguez Название: Materials Science in Semiconductor Processing ISBN: 1773612395 ISBN-13(EAN): 9781773612393 Издательство: Mare Nostrum (Eurospan) Рейтинг: Цена: 160770.00 T Наличие на складе: Невозможна поставка. Описание: Presents examples of actual devices and real applications. Looking at the complicated architectures and numerous steps involved in a real semiconductor device, it can be seen that not only the bulk semiconductor is important, but also the processes around them. This book describes some of the most common methods to identify the properties of the different layers.
Автор: Amalia Patane; Naci Balkan Название: Semiconductor Research ISBN: 3642432905 ISBN-13(EAN): 9783642432903 Издательство: Springer Рейтинг: Цена: 130590.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: The book describes the fundamentals, latest developments and use of key experimental techniques for semiconductor research. It explains the application potential of various analytical methods and discusses the opportunities to apply particular analytical techniques to study novel semiconductor compounds, such as dilute nitride alloys.
Автор: Gyu-Chul Yi Название: Semiconductor Nanostructures for Optoelectronic Devices ISBN: 3642439667 ISBN-13(EAN): 9783642439667 Издательство: Springer Рейтинг: Цена: 104480.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This book summarizes the current state of semiconductor nanodevice development, examining nanowires, nanorods, hybrid semiconductor nanostructures, wide bandgap nanostructures for visible light emitters and graphene and describing their device applications.
Автор: Ulrich Hilleringmann Название: Silicon Semiconductor Technology Processing and Integration of Microelectronic Devices ISBN: 365841040X ISBN-13(EAN): 9783658410407 Издательство: Springer Рейтинг: Цена: 60550.00 T Наличие на складе: Нет в наличии. Описание: The book presents the basic steps and the technical implementation of individual processes for microelectronic circuit integration in silicon. Interaction and influences of e. g. oxidation, etching, doping and thermal processes for integrating CMOS- and Bipolar circuits are discussed in detail, beginning with the purification of silicon up to the encapsulated integrated circuit. It includes modern processes like atomic layer deposition and etching for nanoscale structures and compares improvements like silicide contacts, copper metallization, high-k dielectrics, and SOI and FINFET structures. All processes are presented looking from the process engineer’s view.
Автор: Badih El-Kareh Название: Fundamentals of Semiconductor Processing Technology ISBN: 1461359279 ISBN-13(EAN): 9781461359272 Издательство: Springer Рейтинг: Цена: 121890.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: It is also important that those working on specific unit processes, such as lithography or hot processes, be familiar with other unit processes used to manufacture the product.
Chapter1: Overview of Parasitic Substrate Coupling.- Chapter2: Design Challenges in High Voltage ICs.- Chapter3: Substrate Modeling with Parasitic Transistors.- Chapter4: TCAD Validation of the Model.- Chapter5: Extraction Tool for the Substrate Network.- Chapter6: Parasitic Bipolar Transistors in Benchmark Structures.- Chapter7: Substrate Coupling Analysis and Evaluation of Protection Strategies.
Автор: Stephen M. Goodnick; Anatoli Korkin; Robert Nemani Название: Semiconductor Nanotechnology ISBN: 3030063240 ISBN-13(EAN): 9783030063245 Издательство: Springer Рейтинг: Цена: 149060.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание:
This book presents research dedicated to solving scientific and technological problems in many areas of electronics, photonics and renewable energy. Energy and information are interconnected and are essential elements for the development of human society. Transmission, processing and storage of information requires energy consumption, while the efficient use and access to new energy sources requires new information (ideas and expertise) and the design of novel systems such as photovoltaic devices, fuel cells and batteries. Semiconductor physics creates the knowledge base for the development of information (computers, cell phones, etc.) and energy (photovoltaic) technologies. The exchange of ideas and expertise between these two technologies is critical and expands beyond semiconductors. Continued progress in information and renewable energy technologies requires miniaturization of devices and reduction of costs, energy and material consumption. The latest generation of electronic devices is now approaching nanometer scale dimensions, new materials are being introduced into electronics manufacturing at an unprecedented rate, and alternative technologies to mainstream CMOS are evolving. Nanotechnology is widely accepted as a source of potential solutions in securing future progress for information and energy technologies.
Semiconductor Nanotechnology features chapters that cover the following areas: atomic scale materials design, bio- and molecular electronics, high frequency electronics, fabrication of nanodevices, magnetic materials and spintronics, materials and processes for integrated and subwave optoelectronics, nanoCMOS, new materials for FETs and other devices, nanoelectronics system architecture, nano optics and lasers, non-silicon materials and devices, chemical and biosensors, quantum effects in devices, nano science and technology applications in the development of novel solar energy devices, and fuel cells and batteries.
Автор: S. Coffa; F. Priolo; Emanuele Rimini; J.M. Poate Название: Crucial Issues in Semiconductor Materials and Processing Technologies ISBN: 0792320034 ISBN-13(EAN): 9780792320036 Издательство: Springer Рейтинг: Цена: 395040.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: Discusses crucial issues facing lithography, ion implication and plasma processing, metallization and insulating layer quality, and crystal growth. This book covers silicon and compound semiconductors and photonic materials.
Автор: Jenkins Название: RF and Time-domain Techniques for Evaluating Novel Semiconductor Transistors ISBN: 3030777774 ISBN-13(EAN): 9783030777777 Издательство: Springer Рейтинг: Цена: 60550.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This book presents a variety of techniques using high-frequency (RF) and time-domain measurements to understand the electrical performance of novel, modern transistors made of materials such as graphene, carbon nanotubes, and silicon-on-insulator, and using new transistor structures. The author explains how to use conventional RF and time- domain measurements to characterize the performance of the transistors. In addition, he explains how novel transistors may be subject to effects such as self-heating, period-dependent output, non-linearity, susceptibility to short-term degradation, DC-invisible structural defects, and a different response to DC and transient inputs. Readers will understand that in order to fully understand and characterize the behavior of a novel transistor, there is an arsenal of dynamic techniques available. In addition to abstract concepts, the reader will learn of practical tips required to achieve meaningful measurements, and will understand the relationship between these measurements and traditional, conventional DC characteristics.
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