RF and Time-domain Techniques for Evaluating Novel Semiconductor Transistors, Jenkins

Автор: Taur, Yuan,
Название: Fundamentals of modern VLSI devices /
ISBN: 1108480020 ISBN-13(EAN): 9781108480024
Издательство: Cambridge Academ
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Цена: 57030.00 T
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Описание: A thoroughly updated third edition of an classic text, perfect for practical transistor design and in the classroom. It includes a variety of recent developments, reorganized chapters, and additional end-of-chapter homework exercises, making it ideal for senior undergraduate and graduate students taking advanced semiconductor devices courses.

Автор: Zhaojun Liu, Tongde Huang, Qiang Li, Xing Lu, Xinbo Zou
Название: Compound Semiconductor Materials and Devices
ISBN: 1627058524 ISBN-13(EAN): 9781627058520
Издательство: Mare Nostrum (Eurospan)
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Цена: 36030.00 T
Наличие на складе: Невозможна поставка.
Описание: Ever since its invention in the 1980s, the compound semiconductor heterojunction-based high electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications. This book provides readers with broad coverage on techniques and new trends of HEMT, employing leading compound semiconductors, III-N and III-V materials.

Автор: Jenkins Keith a.
Название: RF and Time-Domain Techniques for Evaluating Novel Semiconductor Transistors
ISBN: 303077774X ISBN-13(EAN): 9783030777746
Издательство: Springer
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Цена: 60550.00 T
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Описание: This book presents a variety of techniques using high-frequency (RF) and time-domain measurements to understand the electrical performance of novel, modern transistors made of materials such as graphene, carbon nanotubes, and silicon-on-insulator, and using new transistor structures. The author explains how to use conventional RF and time- domain measurements to characterize the performance of the transistors. In addition, he explains how novel transistors may be subject to effects such as self-heating, period-dependent output, non-linearity, susceptibility to short-term degradation, DC-invisible structural defects, and a different response to DC and transient inputs. Readers will understand that in order to fully understand and characterize the behavior of a novel transistor, there is an arsenal of dynamic techniques available. In addition to abstract concepts, the reader will learn of practical tips required to achieve meaningful measurements, and will understand the relationship between these measurements and traditional, conventional DC characteristics.

Автор: Ioannis Kymissis
Название: Organic Field Effect Transistors
ISBN: 1441947116 ISBN-13(EAN): 9781441947116
Издательство: Springer
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Цена: 104480.00 T
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Описание: As a basic introduction to the subject for practitioners, this text will also be of interest to researchers looking for references that are not part of their subject area, focusing on materials and techniques useful for making integrated circuits.

Автор: J.-P. Colinge
Название: FinFETs and Other Multi-Gate Transistors
ISBN: 1441944095 ISBN-13(EAN): 9781441944092
Издательство: Springer
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Цена: 139310.00 T
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Описание: This book explains the physics and properties of multi-gate field-effect transistors (MuGFETs), how they are made and how circuit designers can use them to improve the performances of integrated circuits.

Автор: Platt Charles
Название: Encyclopedia of Electronic Components Volume 2: Diodes, Transistors, Chips, Light, Heat, and Sound Emitters
ISBN: 1449334180 ISBN-13(EAN): 9781449334185
Издательство: Wiley
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Цена: 25330.00 T
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Описание: Want to know how to use an electronic component? This second book of a three-volume set includes key information on electronics parts for your projects - complete with photographs, schematics, and diagrams. You`ll learn what each one does, how it works, why it`s useful, and what variants exist.

Автор: Seongil Im, Youn-Gyoung Chang, Jae Hoon Kim
Название: Photo-Excited Charge Collection Spectroscopy: Probing the traps in field-effect transistors (SpringerBriefs in Physics)
ISBN: 9400763913 ISBN-13(EAN): 9789400763913
Издательство: Springer
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Цена: 43530.00 T
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Описание: Solid state field-effect devices such as organic and inorganic-channel thin-film transistors (TFTs) have been expected to promote advances in display and sensor electronics.

Автор: Cherie R. Kagan, Paul Andry
Название: Thin-film transistors
ISBN: 0824709594 ISBN-13(EAN): 9780824709594
Издательство: Taylor&Francis
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Цена: 265410.00 T
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Описание: This is a single-source treatment of developments in TFT production from international specialists

Автор: Jeroen A. Croon; Willy M Sansen; Herman E. Maes
Название: Matching Properties of Deep Sub-Micron MOS Transistors
ISBN: 1441937188 ISBN-13(EAN): 9781441937186
Издательство: Springer
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Цена: 130590.00 T
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Описание: The model is illustrated by dimensioning the unit current cell of a current-steering D/A converter.The most commonly used methods to extract the matching properties of a technology are bench-marked with respect to model accuracy, measurement accuracy and speed, and physical contents of the extracted parameters.

Автор: Juras Pozela
Название: Physics of High-Speed Transistors
ISBN: 0306446197 ISBN-13(EAN): 9780306446191
Издательство: Springer
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Цена: 204040.00 T
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Описание: Examines the physical principles and technological approaches that make high-speed transistors possible. This book includes discussions of maximum drift velocity in semiconductors, hot-electron transistors, and high-speed devices and integrated circuits.

Автор: Tobias Erlbacher
Название: Lateral Power Transistors in Integrated Circuits
ISBN: 3319345206 ISBN-13(EAN): 9783319345208
Издательство: Springer
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Цена: 95770.00 T
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Описание: This book details and compares recent advancements in the development of novel lateral power transistors (LDMOS devices) for integrated circuits in power electronic applications. It includes the state-of-the-art concept of double-acting RESURF topologies.

Автор: Amit Chaudhry
Название: Fundamentals of Nanoscaled Field Effect Transistors
ISBN: 1493944827 ISBN-13(EAN): 9781493944828
Издательство: Springer
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Цена: 113180.00 T
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Описание: This book covers principles and theory of nanoscale transistors, including quantum mechanical tunneling and inversion layer quantization and solutions like high-k and strained-Si technology, alternate structures and graphene technology. Includes case studies.