Compound Semiconductors 1996, Proceedings of the Twenty-Third INT Symposium on Compound Semiconductors held in St Petersburg, Russia, 23-27 September 1996, Shur, M.S.
Автор: Sakaki, H Название: Compound Semiconductors 1998 ISBN: 0750306114 ISBN-13(EAN): 9780750306119 Издательство: Taylor&Francis Рейтинг: Цена: 408320.00 T Наличие на складе: Поставка под заказ.
Автор: Suresh Jain; Magnus Willander; R. Van Overstraeten Название: Compound Semiconductors Strained Layers and Devices ISBN: 0792377699 ISBN-13(EAN): 9780792377696 Издательство: Springer Рейтинг: Цена: 174150.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: Provides an overview of work done on strain, dislocations and mechanical properties of strained layers. This book discusses the effects of strain on band structure, transport, and optical properties of both the zinc blende and the wurtzite compound semiconductors, and Piezoelectric Effects and Quantum Confined Stark Effects.
Автор: Christopher M. Snowden; Robert E. Miles Название: Compound Semiconductor Device Modelling ISBN: 1447120507 ISBN-13(EAN): 9781447120506 Издательство: Springer Рейтинг: Цена: 87070.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: In common with their low frequency counterparts, these devices are often represented using equivalent circuit models, but it is often necessary to resort to physical models in order to gain insight into the detailed operation of compound semiconductor devices.
Автор: Ilegems, Marc Название: Compound Semiconductors 2002 ISBN: 0750309423 ISBN-13(EAN): 9780750309424 Издательство: Taylor&Francis Рейтинг: Цена: 510400.00 T Наличие на складе: Есть у поставщика Поставка под заказ.
Автор: Ching-Hua Su Название: Vapor Crystal Growth and Characterization ISBN: 3030396541 ISBN-13(EAN): 9783030396541 Издательство: Springer Рейтинг: Цена: 93160.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание:
The book describes developments in the crystal growth of bulk II-VI semiconductor materials. A fundamental, systematic, and in-depth study of the physical vapor transport (PVT) growth process is the key to producing high-quality single crystals of semiconductors. As such, the book offers a comprehensive overview of the extensive studies on ZnSe and related II-VI wide bandgap compound semiconductors, such as CdS, CdTe, ZnTe, ZnSeTe and ZnSeS. Further, it shows the detailed steps for the growth of bulk crystals enabling optical devices which can operate in the visible spectrum for applications such as blue light emitting diodes, lasers for optical displays and in the mid-IR wavelength range, high density recording, and military communications.
The book then discusses the advantages of crystallization from vapor compared to the conventional melt growth: lower processing temperatures, the purification process associated with PVT, and the improved surface morphology of the grown crystals, as well as the necessary drawbacks to the PVT process, such as the low and inconsistent growth rates and the low yield of single crystals. By presenting in-situ measurements of transport rate, partial pressures and interferometry, as well as visual observations, the book provides detailed insights into in the kinetics during the PVT process.
This book is intended for graduate students and professionals in materials science as well as engineers preparing and developing optical devices with semiconductors.
Автор: Suresh Jain; Magnus Willander; R. Van Overstraeten Название: Compound Semiconductors Strained Layers and Devices ISBN: 1461370000 ISBN-13(EAN): 9781461370000 Издательство: Springer Рейтинг: Цена: 174150.00 T Наличие на складе: Есть у поставщика Поставка под заказ.
Автор: Kamakhya Prasad Ghatak; Sitangshu Bhattacharya; De Название: Einstein Relation in Compound Semiconductors and Their Nanostructures ISBN: 3540795561 ISBN-13(EAN): 9783540795568 Издательство: Springer Рейтинг: Цена: 204040.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: Deals with the Einstein relation in compound semiconductors and their nanostructures. This book considers materials such as nonlinear optical, III-V, ternary, quaternary, II-VI, IV-VI, Bismuth, stressed compounds, quantum wells, quantum wires, nipi structures, carbon nanotubes, heavily doped semiconductors, and inversion layers.
Автор: Robert K. Willardson Название: Processing and Properties of Compound Semiconductors,73 ISBN: 0127521828 ISBN-13(EAN): 9780127521824 Издательство: Elsevier Science Рейтинг: Цена: 211240.00 T Наличие на складе: Нет в наличии.
Название: Compound Semiconductors, Physics, T ISBN: 9814774073 ISBN-13(EAN): 9789814774079 Издательство: Taylor&Francis Рейтинг: Цена: 96970.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This book provides an overview of compound semiconductor materials and their technology. After presenting a theoretical background, it describes the relevant material preparation technologies for bulk and thin-layer epitaxial growth. It then briefly discusses the electrical, optical, and structural properties of semiconductors, complemented by a description of the most popular characterization tools, before more complex hetero- and low-dimensional structures are discussed. A special chapter is devoted to GaN and related materials, owing to their huge importance in modern optoelectronic and electronic devices, on the one hand, and their particular properties compared to other compound semiconductors, on the other. In the last part of the book, the physics and functionality of optoelectronic and electronic device structures (LEDs, laser diodes, solar cells, field-effect and heterojunction bipolar transistors) are discussed on the basis of the specific properties of compound semiconductors presented in the preceding chapters of the book. Compound semiconductors form the back-bone of all opto-electronic and electronic devices besides the classical Si electronics. Currently the most important field is solid state lighting with highly efficient LEDs emitting visible light. Also laser diodes of all wavelength ranges between mid-infrared and near ultraviolet have been the enabler for a huge number of unprecedented applications like CDs and DVDs for entertainment and data storage, not to speak about the internet, which would be impossible without optical data communications with infrared laser diodes as key elements. This book provides a concise overview over this class of materials, including the most important technological aspects for their fabrication and characterisation, also covering the most relevant devices based on compound semiconductors. It presents therefore an excellent introduction into this subject not only for students, but also for engineers and scientist who intend to put their focus on this field of science.
Название: III–V Compound Semiconductors ISBN: 0367383268 ISBN-13(EAN): 9780367383268 Издательство: Taylor&Francis Рейтинг: Цена: 67360.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание:
Silicon-based microelectronics has steadily improved in various performance-to-cost metrics. But after decades of processor scaling, fundamental limitations and considerable new challenges have emerged. The integration of compound semiconductors is the leading candidate to address many of these issues and to continue the relentless pursuit of more powerful, cost-effective processors.
III-V Compound Semiconductors: Integration with Silicon-Based Microelectronics covers recent progress in this area, addressing the two major revolutions occurring in the semiconductor industry: integration of compound semiconductors into Si microelectronics, and their fabrication on large-area Si substrates. The authors present a scientific and technological exploration of GaN, GaAs, and III-V compound semiconductor devices within Si microelectronics, building a fundamental foundation to help readers deal with relevant design and application issues.
Explores silicon-based CMOS applications developed within the cutting-edge DARPA program
Providing an overview of systems, devices, and their component materials, this book:
Describes structure, phase diagrams, and physical and chemical properties of III-V and Si materials, as well as integration challenges
Focuses on the key merits of GaN, including its importance in commercializing a new class of power diodes and transistors
Analyzes more traditional III-V materials, discussing their merits and drawbacks for device integration with Si microelectronics
Elucidates properties of III-V semiconductors and describes approaches to evaluate and characterize their attributes
Introduces novel technologies for the measurement and evaluation of material quality and device properties
Investi
Автор: Cheng Keh Yung Название: III-V Compound Semiconductors and Devices: An Introduction to Fundamentals ISBN: 3030519015 ISBN-13(EAN): 9783030519018 Издательство: Springer Рейтинг: Цена: 93160.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This textbook gives a complete and fundamental introduction to the properties of III-V compound semiconductor devices, highlighting the theoretical and practical aspects of their device physics.
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