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Compound Semiconductors 1998, Sakaki, H


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Автор: Sakaki, H
Название:  Compound Semiconductors 1998
ISBN: 9780750306119
Издательство: Taylor&Francis
Классификация:

ISBN-10: 0750306114
Обложка/Формат: Hardback
Страницы: 892
Вес: 1.50 кг.
Дата издания: 01.01.1999
Серия: Institute of physics conference series
Читательская аудитория: Undergraduate
Подзаголовок: Proceedings of the twenty-fifth international symposium on compound semiconductors held in nara, japan, 12-16 october 1998
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Поставляется из: Европейский союз

Compound Semiconductors Strained Layers and Devices

Автор: Suresh Jain; Magnus Willander; R. Van Overstraeten
Название: Compound Semiconductors Strained Layers and Devices
ISBN: 0792377699 ISBN-13(EAN): 9780792377696
Издательство: Springer
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Цена: 174150.00 T
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Описание: Provides an overview of work done on strain, dislocations and mechanical properties of strained layers. This book discusses the effects of strain on band structure, transport, and optical properties of both the zinc blende and the wurtzite compound semiconductors, and Piezoelectric Effects and Quantum Confined Stark Effects.

Compound Semiconductors, Physics, T

Название: Compound Semiconductors, Physics, T
ISBN: 9814774073 ISBN-13(EAN): 9789814774079
Издательство: Taylor&Francis
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Цена: 96970.00 T
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Описание: This book provides an overview of compound semiconductor materials and their technology. After presenting a theoretical background, it describes the relevant material preparation technologies for bulk and thin-layer epitaxial growth. It then briefly discusses the electrical, optical, and structural properties of semiconductors, complemented by a description of the most popular characterization tools, before more complex hetero- and low-dimensional structures are discussed. A special chapter is devoted to GaN and related materials, owing to their huge importance in modern optoelectronic and electronic devices, on the one hand, and their particular properties compared to other compound semiconductors, on the other. In the last part of the book, the physics and functionality of optoelectronic and electronic device structures (LEDs, laser diodes, solar cells, field-effect and heterojunction bipolar transistors) are discussed on the basis of the specific properties of compound semiconductors presented in the preceding chapters of the book. Compound semiconductors form the back-bone of all opto-electronic and electronic devices besides the classical Si electronics. Currently the most important field is solid state lighting with highly efficient LEDs emitting visible light. Also laser diodes of all wavelength ranges between mid-infrared and near ultraviolet have been the enabler for a huge number of unprecedented applications like CDs and DVDs for entertainment and data storage, not to speak about the internet, which would be impossible without optical data communications with infrared laser diodes as key elements. This book provides a concise overview over this class of materials, including the most important technological aspects for their fabrication and characterisation, also covering the most relevant devices based on compound semiconductors. It presents therefore an excellent introduction into this subject not only for students, but also for engineers and scientist who intend to put their focus on this field of science.

III–V Compound Semiconductors

Автор: Li, Tingkai
Название: III–V Compound Semiconductors
ISBN: 1439815224 ISBN-13(EAN): 9781439815229
Издательство: Taylor&Francis
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Цена: 224570.00 T
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Compound Semiconductor Device Modelling

Автор: Christopher M. Snowden; Robert E. Miles
Название: Compound Semiconductor Device Modelling
ISBN: 1447120507 ISBN-13(EAN): 9781447120506
Издательство: Springer
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Цена: 87070.00 T
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Описание: In common with their low frequency counterparts, these devices are often represented using equivalent circuit models, but it is often necessary to resort to physical models in order to gain insight into the detailed operation of compound semiconductor devices.

Vapor Crystal Growth and Characterization: Znse and Related II-VI Compound Semiconductors

Автор: Su Ching-Hua
Название: Vapor Crystal Growth and Characterization: Znse and Related II-VI Compound Semiconductors
ISBN: 3030396576 ISBN-13(EAN): 9783030396572
Издательство: Springer
Цена: 93160.00 T
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Описание:

Introduction.- Fundamentals of physical vapor transport process.- Vapor transport rate (Mass Flux) measurements and heat treatments.- Crystal growth.- Residual gas measurements and morphology characterization on grown crystals.


Compound Semiconductors 2002

Автор: Ilegems, Marc
Название: Compound Semiconductors 2002
ISBN: 0750309423 ISBN-13(EAN): 9780750309424
Издательство: Taylor&Francis
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Цена: 510400.00 T
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III-V Compound Semiconductors and Devices: An Introduction to Fundamentals

Автор: Cheng Keh Yung
Название: III-V Compound Semiconductors and Devices: An Introduction to Fundamentals
ISBN: 3030519015 ISBN-13(EAN): 9783030519018
Издательство: Springer
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Цена: 93160.00 T
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Описание: This textbook gives a complete and fundamental introduction to the properties of III-V compound semiconductor devices, highlighting the theoretical and practical aspects of their device physics.

III–V Compound Semiconductors

Название: III–V Compound Semiconductors
ISBN: 0367383268 ISBN-13(EAN): 9780367383268
Издательство: Taylor&Francis
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Цена: 67360.00 T
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Описание:

Silicon-based microelectronics has steadily improved in various performance-to-cost metrics. But after decades of processor scaling, fundamental limitations and considerable new challenges have emerged. The integration of compound semiconductors is the leading candidate to address many of these issues and to continue the relentless pursuit of more powerful, cost-effective processors.





III-V Compound Semiconductors: Integration with Silicon-Based Microelectronics covers recent progress in this area, addressing the two major revolutions occurring in the semiconductor industry: integration of compound semiconductors into Si microelectronics, and their fabrication on large-area Si substrates. The authors present a scientific and technological exploration of GaN, GaAs, and III-V compound semiconductor devices within Si microelectronics, building a fundamental foundation to help readers deal with relevant design and application issues.





Explores silicon-based CMOS applications developed within the cutting-edge DARPA program





Providing an overview of systems, devices, and their component materials, this book:







  • Describes structure, phase diagrams, and physical and chemical properties of III-V and Si materials, as well as integration challenges






  • Focuses on the key merits of GaN, including its importance in commercializing a new class of power diodes and transistors






  • Analyzes more traditional III-V materials, discussing their merits and drawbacks for device integration with Si microelectronics






  • Elucidates properties of III-V semiconductors and describes approaches to evaluate and characterize their attributes






  • Introduces novel technologies for the measurement and evaluation of material quality and device properties






  • Investi
Compound Semiconductors Strained Layers and Devices

Автор: Suresh Jain; Magnus Willander; R. Van Overstraeten
Название: Compound Semiconductors Strained Layers and Devices
ISBN: 1461370000 ISBN-13(EAN): 9781461370000
Издательство: Springer
Рейтинг:
Цена: 174150.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.

Compound Semiconductors 1995, Proceedings of the Twenty-Second INT  Symposium on Compound Semiconductors held in Cheju Island, Korea, 28 August-2 September, 1995

Автор: Institute of Physics Conf
Название: Compound Semiconductors 1995, Proceedings of the Twenty-Second INT Symposium on Compound Semiconductors held in Cheju Island, Korea, 28 August-2 September, 1995
ISBN: 0750303425 ISBN-13(EAN): 9780750303422
Издательство: Taylor&Francis
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Цена: 163330.00 T
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Einstein Relation in Compound Semiconductors and Their Nanostructures

Автор: Kamakhya Prasad Ghatak; Sitangshu Bhattacharya; De
Название: Einstein Relation in Compound Semiconductors and Their Nanostructures
ISBN: 3540795561 ISBN-13(EAN): 9783540795568
Издательство: Springer
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Цена: 204040.00 T
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Описание: Deals with the Einstein relation in compound semiconductors and their nanostructures. This book considers materials such as nonlinear optical, III-V, ternary, quaternary, II-VI, IV-VI, Bismuth, stressed compounds, quantum wells, quantum wires, nipi structures, carbon nanotubes, heavily doped semiconductors, and inversion layers.

Compound Semiconductors 1996, Proceedings of the Twenty-Third INT  Symposium on Compound Semiconductors held in St Petersburg, Russia, 23-27 September 1996

Автор: Shur, M.S.
Название: Compound Semiconductors 1996, Proceedings of the Twenty-Third INT Symposium on Compound Semiconductors held in St Petersburg, Russia, 23-27 September 1996
ISBN: 0750304529 ISBN-13(EAN): 9780750304528
Издательство: Taylor&Francis
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Цена: 153120.00 T
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