Highly Integrated Gate Drivers for Si and GaN Power Transistors, Seidel Achim, Wicht Bernhard
Автор: Seidel Achim, Wicht Bernhard Название: Highly Integrated Gate Drivers for Si and Gan Power Transistors ISBN: 3030689395 ISBN-13(EAN): 9783030689391 Издательство: Springer Цена: 79190.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: The authors cover the full range from fundamentals to implementation details including topics like power stages, various kinds of gate drivers (resonant, non-resonant, current-source, voltage-source), gate drive schemes, driver supply, gate loop, gate driver power efficiency and comparison silicon versus GaN transistors.
Автор: Tobias Erlbacher Название: Lateral Power Transistors in Integrated Circuits ISBN: 3319345206 ISBN-13(EAN): 9783319345208 Издательство: Springer Рейтинг: Цена: 95770.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This book details and compares recent advancements in the development of novel lateral power transistors (LDMOS devices) for integrated circuits in power electronic applications. It includes the state-of-the-art concept of double-acting RESURF topologies.
Автор: Tobias Erlbacher Название: Lateral Power Transistors in Integrated Circuits ISBN: 3319004999 ISBN-13(EAN): 9783319004990 Издательство: Springer Рейтинг: Цена: 130430.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This book details and compares recent advancements in the development of novel lateral power transistors (LDMOS devices) for integrated circuits in power electronic applications. It includes the state-of-the-art concept of double-acting RESURF topologies.
Автор: Ye Zhou Название: Semiconducting Metal Oxide Thin-Film Transistors ISBN: 0750325542 ISBN-13(EAN): 9780750325547 Издательство: INGRAM PUBLISHER SERVICES UK Рейтинг: Цена: 168960.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: Patrick McGorry has transformed the lives of thousands of young people through early intervention and a holistic approach to mental health care. Here, he presents his plan for mental wealth for all Australians - he wants to ensure that all Australians have every chance for a fulfilling and mentally healthy life, crucially supported by stigma-free access to humane and effective mental health care.
Автор: Taur, Yuan, Название: Fundamentals of modern VLSI devices / ISBN: 1108480020 ISBN-13(EAN): 9781108480024 Издательство: Cambridge Academ Рейтинг: Цена: 57030.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: A thoroughly updated third edition of an classic text, perfect for practical transistor design and in the classroom. It includes a variety of recent developments, reorganized chapters, and additional end-of-chapter homework exercises, making it ideal for senior undergraduate and graduate students taking advanced semiconductor devices courses.
Автор: Saha Samar K. Название: Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond ISBN: 1482240661 ISBN-13(EAN): 9781482240665 Издательство: Taylor&Francis Рейтинг: Цена: 209270.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This modern treatise on compact models for circuit computer-aided design (CAD) presents industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical MOS models.
Автор: J.-P. Colinge Название: FinFETs and Other Multi-Gate Transistors ISBN: 1441944095 ISBN-13(EAN): 9781441944092 Издательство: Springer Рейтинг: Цена: 139310.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This book explains the physics and properties of multi-gate field-effect transistors (MuGFETs), how they are made and how circuit designers can use them to improve the performances of integrated circuits.
Автор: Jeroen A. Croon; Willy M Sansen; Herman E. Maes Название: Matching Properties of Deep Sub-Micron MOS Transistors ISBN: 1441937188 ISBN-13(EAN): 9781441937186 Издательство: Springer Рейтинг: Цена: 130590.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: The model is illustrated by dimensioning the unit current cell of a current-steering D/A converter.The most commonly used methods to extract the matching properties of a technology are bench-marked with respect to model accuracy, measurement accuracy and speed, and physical contents of the extracted parameters.
Автор: Nabil Shovon Ashraf Название: Low Substrate Temperature Modeling Outlook of Scaled n-MOSFET ISBN: 1681733854 ISBN-13(EAN): 9781681733852 Издательство: Mare Nostrum (Eurospan) Рейтинг: Цена: 41580.00 T Наличие на складе: Невозможна поставка. Описание: Low substrate/lattice temperature (< 300 K) operation of $n$-MOSFET has been effectively studied by device research and integration professionals in CMOS logic and analog products from the early 1970s. The author of this book previously composed an e-book in this area where he and his co-authors performed original simulation and modeling work on MOSFET threshold voltage and demonstrated that through efficient manipulation of threshold voltage values at lower substrate temperatures, superior degrees of reduction of subthreshold and off-state leakage current can be implemented in high-density logic and microprocessor chips fabricated in a silicon die. In this book, the author explores other device parameters such as channel inversion carrier mobility and its characteristic evolution as temperature on the die varies from 100‒300 K. Channel mobility affects both on-state drain current and subthreshold drain current and both drain current behaviors at lower temperatures have been modeled accurately and simulated for a 1 $u$ m channel length $n$-MOSFET. In addition, subthreshold slope which is an indicator of how speedily the device drain current can be switched between near off current and maximum drain current is an important device attribute to model at lower operating substrate temperatures. This book is the first to illustrate the fact that a single subthreshold slope value which is generally reported in textbook plots and research articles, is erroneous and at lower gate voltage below inversion, subthreshold slope value exhibits a variation tendency on applied gate voltage below threshold, i.e., varying depletion layer and vertical field induced surface band bending variations at the MOSFET channel surface. The author also will critically review the state-of-the art effectiveness of certain device architectures presently prevalent in the semiconductor industry below 45 nm node from the perspectives of device physical analysis at lower substrate temperature operating conditions. The book concludes with an emphasis on modeling simulations, inviting the device professionals to meet the performance bottlenecks emanating from inceptives present at these lower temperatures of operation of today's 10 nm device architectures.
Автор: Juras Pozela Название: Physics of High-Speed Transistors ISBN: 1489912444 ISBN-13(EAN): 9781489912442 Издательство: Springer Рейтинг: Цена: 139750.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This book examines the physical principles behind the operation of high-speed transistors operating at frequencies above 10 GHz and having switching times less than 100 psec.
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