Highly Integrated Gate Drivers for Si and Gan Power Transistors, Seidel Achim, Wicht Bernhard
Автор: Alex Lidow, Michael de Rooij, Johan Strydom, David Название: GaN Transistors for Efficient Power Conversion ISBN: 1119594146 ISBN-13(EAN): 9781119594147 Издательство: Wiley Рейтинг: Цена: 103430.00 T Наличие на складе: Невозможна поставка. Описание:
An up-to-date, practical guide on upgrading from silicon to GaN, and how to use GaN transistors in power conversion systems design
This updated, third edition of a popular book on GaN transistors for efficient power conversion has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout, and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices.
GaN Transistors for Efficient Power Conversion, 3rd Edition brings key updates to the chapters of Driving GaN Transistors; Modeling, Simulation, and Measurement of GaN Transistors; DC-DC Power Conversion; Envelope Tracking; and Highly Resonant Wireless Energy Transfer. It also offers new chapters on Thermal Management, Multilevel Converters, and Lidar, and revises many others throughout.
Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications
Updated with 35% new material, including three new chapters on Thermal Management, Multilevel Converters, Wireless Power, and Lidar
Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors
A valuable resource for professional engineers, systems designers, and electrical engineering students who need to fully understand the state-of-the-art
GaN Transistors for Efficient Power Conversion, 3rd Edition is an essential learning tool and reference guide that enables power conversion engineers to design energy-efficient, smaller, and more cost-effective products using GaN transistors.
Автор: Shepherd William Et Al Название: Electricity Generation Using Wind Power (Second Edition) ISBN: 9813148659 ISBN-13(EAN): 9789813148659 Издательство: World Scientific Publishing Рейтинг: Цена: 100320.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание:
Is wind power the answer to our energy supply problems? Is there enough wind for everyone? Is offshore generation better than onshore generation? Can a roof-mounted wind turbine generate enough electricity to supply a typical domestic household?
Electricity Generation Using Wind Power (2nd Edition) answers these pressing questions through its detailed coverage of the different types of electrical generator machines used, as well as the power electronic converter technologies and control principles employed. Also covered is the integration of wind farms into established electricity grid systems, plus environmental and economic aspects of wind generation.
Written for technically minded readers, especially electrical engineers concerned with the possible use of wind power for generating electricity, it incorporates some global meteorological and geographical features of wind supply plus a survey of past and present wind turbines. Included is a technical assessment of the choice of turbine sites. The principles and analysis of wind power conversion, transmission and efficiency evaluation are described.
This book includes worked numerical examples in some chapters, plus end of chapter problems and review questions, with answers. As a textbook it is pitched at the level of final year undergraduate engineering study but may also be useful as a textbook or reference for wider technical studies.
Автор: Mukherjee Shrijit Название: Dynamic Performance Simulation of AlGaN/GaN High Electron Mobility Transistors ISBN: 0530005883 ISBN-13(EAN): 9780530005881 Издательство: Неизвестно Рейтинг: Цена: 80930.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: Abstract: GaN based devices have reached a point in terms of processing maturity where the favorable wide-band gap related properties can be implemented in several commercial and military applications. However, long term reliability continues to affect large scale integration of such devices, specifically the potential of AlGaN/GaN High Electron Mobility Transistors (HEMTs), due to the indefinite nature of defects in the structure and mechanisms of performance degradation relevant to such defects. Recent efforts have begun to concentrate more on the bulk properties of the GaN buffer on which the heterostructure is grown, and how defects distributed in the buffer can affect the performance under various operating schemes. This dissertation discusses numerical simulator based investigation of the numerous possibilities by which such point defects can affect electrical behavior. For HEMTs designed for satellite communication systems, proton irradiation results indicate changes in the device parasitics resulting in degradation of RF parameters. Assumption of such radiation damage introducing fast traps indicate severe degradation far exceeding experimental observation. For power switching applications, the necessity of accurately capturing as-grown defects was realized when modeling current relaxation during bias switching. Ability to introduce multiple trap levels in the material bulk aided in achieving simulation results replicating experimental results more accurately than published previously. Impact of factors associated with such traps, either associated with discrete energy levels or band-like distribution in energy, on the nature of current relaxation characterized by its derivative has been presented. Dissertation Discovery Company and University of Florida are dedicated to making scholarly works more discoverable and accessible throughout the world. This dissertation, "Dynamic Performance Simulation of AlGaN/GaN High Electron Mobility Transistors" by Shrijit Mukherjee, was obtained from University of Florida and is being sold with permission from the author. A digital copy of this work may also be found in the university's institutional repository, IR@UF. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation.
Автор: Tobias Erlbacher Название: Lateral Power Transistors in Integrated Circuits ISBN: 3319004999 ISBN-13(EAN): 9783319004990 Издательство: Springer Рейтинг: Цена: 130430.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This book details and compares recent advancements in the development of novel lateral power transistors (LDMOS devices) for integrated circuits in power electronic applications. It includes the state-of-the-art concept of double-acting RESURF topologies.
Автор: Ye Zhou Название: Semiconducting Metal Oxide Thin-Film Transistors ISBN: 0750325542 ISBN-13(EAN): 9780750325547 Издательство: INGRAM PUBLISHER SERVICES UK Рейтинг: Цена: 168960.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: Patrick McGorry has transformed the lives of thousands of young people through early intervention and a holistic approach to mental health care. Here, he presents his plan for mental wealth for all Australians - he wants to ensure that all Australians have every chance for a fulfilling and mentally healthy life, crucially supported by stigma-free access to humane and effective mental health care.
Автор: Saha Samar K. Название: Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond ISBN: 1482240661 ISBN-13(EAN): 9781482240665 Издательство: Taylor&Francis Рейтинг: Цена: 209270.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This modern treatise on compact models for circuit computer-aided design (CAD) presents industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical MOS models.
