Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond, Saha Samar K.
Автор: Tobias Erlbacher Название: Lateral Power Transistors in Integrated Circuits ISBN: 3319004999 ISBN-13(EAN): 9783319004990 Издательство: Springer Рейтинг: Цена: 130430.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This book details and compares recent advancements in the development of novel lateral power transistors (LDMOS devices) for integrated circuits in power electronic applications. It includes the state-of-the-art concept of double-acting RESURF topologies.
Автор: Niccolo Rinaldi, Michael Schroter Название: Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems Technology, Modeling and Circuit Applications ISBN: 8793519613 ISBN-13(EAN): 9788793519619 Издательство: Taylor&Francis Рейтинг: Цена: 88800.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: The semiconductor industry is a fundamental building block of the new economy, there is no area of modern life untouched by the progress of nanoelectronics. The electronic chip is becomingan ever-increasing portion of system solutions, starting initially from less than 5% in the 1970 microcomputer era, to more than 60% of the final cost of a mobile telephone, 50% of the price of a personal computer (representing nearly 100% of the functionalities) and 30% of the price of a monitor in the early 2000’s.Interest in utilizing the (sub-)mm-wave frequency spectrum for commercial and research applications has also been steadily increasing. Such applications, which constitute a diverse but sizeable future market, span a large variety of areas such as health, material science, mass transit, industrial automation, communications, and space exploration.Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems Technology, Modeling and Circuit Applications provides an overview of results of the DOTSEVEN EU research project, and as such focusses on key material developments for mm-Wave Device Technology. It starts with the motivation at the beginning of the project and a summary of its major achievements. The subsequent chapters provide a detailed description of the obtained research results in the various areas of process development, device simulation, compact device modeling, experimental characterization, reliability, (sub-)mm-wave circuit design and systems.
Автор: Tarek Zaki Название: Short-Channel Organic Thin-Film Transistors ISBN: 331918895X ISBN-13(EAN): 9783319188959 Издательство: Springer Рейтинг: Цена: 104480.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This work takes advantage of high-resolution silicon stencil masks to build air-stable complementary OTFTs using a low-temperature fabrication process. the masks exhibit excellent stiffness and stability, thus allowing OTFTs with submicrometer channel lengths and superb device uniformity to be patterned.
Автор: S.D. Brotherton Название: Introduction to Thin Film Transistors: Physics and Technology of TFTs ISBN: 3319000012 ISBN-13(EAN): 9783319000015 Издательство: Springer Рейтинг: Цена: 69870.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This book surveys the technology and applications of TFTs, covering hydrogenated amorphous silicon, poly-crystalline silicon, transparent amorphous oxide semiconductors, organic semiconductors and others that form the core of the flat panel display industry.
Автор: Tobias Erlbacher Название: Lateral Power Transistors in Integrated Circuits ISBN: 3319345206 ISBN-13(EAN): 9783319345208 Издательство: Springer Рейтинг: Цена: 95770.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This book details and compares recent advancements in the development of novel lateral power transistors (LDMOS devices) for integrated circuits in power electronic applications. It includes the state-of-the-art concept of double-acting RESURF topologies.
Автор: Shubham Sahay, Mamidala Jagadesh Kumar Название: Junctionless Field–Effect Transistors: Design, Modeling, and Simulation ISBN: 1119523532 ISBN-13(EAN): 9781119523536 Издательство: Wiley Рейтинг: Цена: 118220.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание:
A comprehensive one-volume reference on current JLFET methods, techniques, and research
Advancements in transistor technology have driven the modern smart-device revolution--many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop referenceon the study and research on JLFETs
This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource:
Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFET
Examines various approaches for analytical and compact modeling of JLFETs in circuit design and simulation
Explains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETs
Suggests research directions and potential applications of JLFETs
Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices.
Автор: Ting Lei Название: Design, Synthesis, and Structure-Property Relationship Study of Polymer Field-Effect Transistors ISBN: 3662456664 ISBN-13(EAN): 9783662456668 Издательство: Springer Рейтинг: Цена: 93160.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: The book summarizes Ting Lei`s PhD study on a series of novel conjugated polymers for field-effect transistors (FETs). Studies contain many aspects of polymer FETs, including backbone design, side-chain engineering, property study, conformation effects and device fabrication.
Автор: Mark Lundstrom; Jing Guo Название: Nanoscale Transistors ISBN: 1441939156 ISBN-13(EAN): 9781441939159 Издательство: Springer Рейтинг: Цена: 113180.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: To push MOSFETs to their scaling limits and to explore devices that may complement or even replace them at molecular scale, a clear understanding of device physics at nanometer scale is necessary.
Автор: Valizadeh Pouya Название: Field Effect Transistors, a Comprehensive Overview ISBN: 1119155495 ISBN-13(EAN): 9781119155492 Издательство: Wiley Рейтинг: Цена: 121390.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This book discusses modern-day Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) and future trends of transistor devices. This book provides an overview of Field Effect Transistors (FETs) by discussing the basic principles of FETs and exploring the latest technological developments in the field.
Автор: Nabil Shovon Ashraf Название: Low Substrate Temperature Modeling Outlook of Scaled n-MOSFET ISBN: 1681733854 ISBN-13(EAN): 9781681733852 Издательство: Mare Nostrum (Eurospan) Рейтинг: Цена: 41580.00 T Наличие на складе: Невозможна поставка. Описание: Low substrate/lattice temperature (< 300 K) operation of $n$-MOSFET has been effectively studied by device research and integration professionals in CMOS logic and analog products from the early 1970s. The author of this book previously composed an e-book in this area where he and his co-authors performed original simulation and modeling work on MOSFET threshold voltage and demonstrated that through efficient manipulation of threshold voltage values at lower substrate temperatures, superior degrees of reduction of subthreshold and off-state leakage current can be implemented in high-density logic and microprocessor chips fabricated in a silicon die. In this book, the author explores other device parameters such as channel inversion carrier mobility and its characteristic evolution as temperature on the die varies from 100‒300 K. Channel mobility affects both on-state drain current and subthreshold drain current and both drain current behaviors at lower temperatures have been modeled accurately and simulated for a 1 $u$ m channel length $n$-MOSFET. In addition, subthreshold slope which is an indicator of how speedily the device drain current can be switched between near off current and maximum drain current is an important device attribute to model at lower operating substrate temperatures. This book is the first to illustrate the fact that a single subthreshold slope value which is generally reported in textbook plots and research articles, is erroneous and at lower gate voltage below inversion, subthreshold slope value exhibits a variation tendency on applied gate voltage below threshold, i.e., varying depletion layer and vertical field induced surface band bending variations at the MOSFET channel surface. The author also will critically review the state-of-the art effectiveness of certain device architectures presently prevalent in the semiconductor industry below 45 nm node from the perspectives of device physical analysis at lower substrate temperature operating conditions. The book concludes with an emphasis on modeling simulations, inviting the device professionals to meet the performance bottlenecks emanating from inceptives present at these lower temperatures of operation of today's 10 nm device architectures.
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