Автор: Singhal Tarun, Singhal Ishta Название: Modelling and Analysis of Single Electron Transistor ISBN: 613891774X ISBN-13(EAN): 9786138917748 Издательство: Неизвестно Рейтинг: Цена: 72170.00 T Наличие на складе: Нет в наличии.
Название: Nanowire Field-Effect Transistor (FET) ISBN: 3039362089 ISBN-13(EAN): 9783039362080 Издательство: Неизвестно Рейтинг: Цена: 46010.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание:
In the last few years, the leading semiconductor industries have introduced multi-gate non-planar transistors into their core business. These are being applied in memories and in logical integrated circuits to achieve better integration on the chip, increased performance, and reduced energy consumption. Intense research is underway to develop these devices further and to address their limitations, in order to continue transistor scaling while further improving performance. This Special Issue looks at recent developments in the field of nanowire field-effect transistors (NW-FETs), covering different aspects of the technology, physics, and modelling of these nanoscale devices.
Автор: Sridharan K., Srinivasu B., Pudi Vikramkumar Название: Low-Complexity Arithmetic Circuit Design in Carbon Nanotube Field Effect Transistor Technology ISBN: 3030506983 ISBN-13(EAN): 9783030506988 Издательство: Springer Рейтинг: Цена: 93160.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This book introduces readers to the emerging carbon nanotube field-effect transistor (CNTFET) technology, and examines the problem of designing efficient arithmetic circuits in CNTFET technology.
Автор: Tigelaar, Howard Название: How transistor area shrank by 1 million fold ISBN: 3030400204 ISBN-13(EAN): 9783030400200 Издательство: Springer Рейтинг: Цена: 46570.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: He describes for readers the key inventions and developments in science and engineering that overcame huge obstacles, enabling engineers to shrink transistor area by over 1 million fold and build billions of transistor switches that switch over a billion times a second, all on a piece of silicon smaller than a thumbnail.
Автор: Vinod Kumar Khanna Название: Flexible Electronics: Thin Film Transistors (Volume 2) ISBN: 0750324503 ISBN-13(EAN): 9780750324502 Издательство: NBN International Рейтинг: Цена: 139390.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание:
This volume focuses on thin-film transistors (TFTs) and their properties, as well as covering field effect transistors (FETs), including electrolyte-gated field-effect transistors such as EGOFETs and OECFETs.
Автор: S.D. Brotherton Название: Introduction to Thin Film Transistors ISBN: 3319033107 ISBN-13(EAN): 9783319033105 Издательство: Springer Рейтинг: Цена: 87060.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This book surveys the technology and applications of TFTs, covering hydrogenated amorphous silicon, poly-crystalline silicon, transparent amorphous oxide semiconductors, organic semiconductors and others that form the core of the flat panel display industry.
Автор: G?nter Kompa Название: Parameter Extraction and Complex Nonlinear Transistor Models ISBN: 1630817449 ISBN-13(EAN): 9781630817442 Издательство: Artech House Рейтинг: Цена: 140450.00 T Наличие на складе: Невозможна поставка. Описание: Parameter Extraction and Complex Nonlinear Transistor Models Microwave G?nter Kompa 12/2019 149.00 Hardcover 9781630817442 570 "Introduction; Transistor Concepts; Classification of Transistor Models; Classical Shockley Model and Enhanced Modifications; Extrinsic Transistor DC Network; Estimation of FET Model Element Values; Transistor Model Complexity; Reliable Estimates of Model Parameters from Low-Frequency; Small-Signal Measurement Techniques; Uncertainties in the Device Modeling Process; Optimization Methods for Model Parameter Extraction; Extraction Methods; All-At-Once Model Parameter Extraction; Decomposition-Based Model Parameter Extraction; Bidirectional Search Method; Pure Analytical Model Parameter Extraction; Analytical Model Parameter Extraction Using Rational Functions; Repetitive Random Optimization with Adaptive Search Space; Frequency Scanning for Bias-Dependence Analysis
Автор: Kaiser Cletus J. Название: The Transistor Handbook ISBN: 0962852570 ISBN-13(EAN): 9780962852572 Издательство: Неизвестно Цена: 22930.00 T Наличие на складе: Есть у поставщика Поставка под заказ.
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