Flexible Electronics: Thin Film Transistors (Volume 2), Vinod Kumar Khanna
Автор: Saha Samar K. Название: Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond ISBN: 1482240661 ISBN-13(EAN): 9781482240665 Издательство: Taylor&Francis Рейтинг: Цена: 209270.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This modern treatise on compact models for circuit computer-aided design (CAD) presents industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical MOS models.
Автор: Shepherd William Et Al Название: Electricity Generation Using Wind Power (Second Edition) ISBN: 9813148659 ISBN-13(EAN): 9789813148659 Издательство: World Scientific Publishing Рейтинг: Цена: 100320.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание:
Is wind power the answer to our energy supply problems? Is there enough wind for everyone? Is offshore generation better than onshore generation? Can a roof-mounted wind turbine generate enough electricity to supply a typical domestic household?
Electricity Generation Using Wind Power (2nd Edition) answers these pressing questions through its detailed coverage of the different types of electrical generator machines used, as well as the power electronic converter technologies and control principles employed. Also covered is the integration of wind farms into established electricity grid systems, plus environmental and economic aspects of wind generation.
Written for technically minded readers, especially electrical engineers concerned with the possible use of wind power for generating electricity, it incorporates some global meteorological and geographical features of wind supply plus a survey of past and present wind turbines. Included is a technical assessment of the choice of turbine sites. The principles and analysis of wind power conversion, transmission and efficiency evaluation are described.
This book includes worked numerical examples in some chapters, plus end of chapter problems and review questions, with answers. As a textbook it is pitched at the level of final year undergraduate engineering study but may also be useful as a textbook or reference for wider technical studies.
Автор: Shubham Sahay, Mamidala Jagadesh Kumar Название: Junctionless Field–Effect Transistors: Design, Modeling, and Simulation ISBN: 1119523532 ISBN-13(EAN): 9781119523536 Издательство: Wiley Рейтинг: Цена: 118220.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание:
A comprehensive one-volume reference on current JLFET methods, techniques, and research
Advancements in transistor technology have driven the modern smart-device revolution--many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop referenceon the study and research on JLFETs
This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource:
Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFET
Examines various approaches for analytical and compact modeling of JLFETs in circuit design and simulation
Explains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETs
Suggests research directions and potential applications of JLFETs
Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices.
Автор: Nabil Shovon Ashraf Название: Low Substrate Temperature Modeling Outlook of Scaled n-MOSFET ISBN: 1681733854 ISBN-13(EAN): 9781681733852 Издательство: Mare Nostrum (Eurospan) Рейтинг: Цена: 41580.00 T Наличие на складе: Невозможна поставка. Описание: Low substrate/lattice temperature (< 300 K) operation of $n$-MOSFET has been effectively studied by device research and integration professionals in CMOS logic and analog products from the early 1970s. The author of this book previously composed an e-book in this area where he and his co-authors performed original simulation and modeling work on MOSFET threshold voltage and demonstrated that through efficient manipulation of threshold voltage values at lower substrate temperatures, superior degrees of reduction of subthreshold and off-state leakage current can be implemented in high-density logic and microprocessor chips fabricated in a silicon die. In this book, the author explores other device parameters such as channel inversion carrier mobility and its characteristic evolution as temperature on the die varies from 100‒300 K. Channel mobility affects both on-state drain current and subthreshold drain current and both drain current behaviors at lower temperatures have been modeled accurately and simulated for a 1 $u$ m channel length $n$-MOSFET. In addition, subthreshold slope which is an indicator of how speedily the device drain current can be switched between near off current and maximum drain current is an important device attribute to model at lower operating substrate temperatures. This book is the first to illustrate the fact that a single subthreshold slope value which is generally reported in textbook plots and research articles, is erroneous and at lower gate voltage below inversion, subthreshold slope value exhibits a variation tendency on applied gate voltage below threshold, i.e., varying depletion layer and vertical field induced surface band bending variations at the MOSFET channel surface. The author also will critically review the state-of-the art effectiveness of certain device architectures presently prevalent in the semiconductor industry below 45 nm node from the perspectives of device physical analysis at lower substrate temperature operating conditions. The book concludes with an emphasis on modeling simulations, inviting the device professionals to meet the performance bottlenecks emanating from inceptives present at these lower temperatures of operation of today's 10 nm device architectures.
Автор: Tarek Zaki Название: Short-Channel Organic Thin-Film Transistors ISBN: 3319369806 ISBN-13(EAN): 9783319369808 Издательство: Springer Рейтинг: Цена: 87060.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This work takes advantage of high-resolution silicon stencil masks to build air-stable complementary OTFTs using a low-temperature fabrication process. the masks exhibit excellent stiffness and stability, thus allowing OTFTs with submicrometer channel lengths and superb device uniformity to be patterned.
Автор: Nabil Shovon Ashraf Название: Low Substrate Temperature Modeling Outlook of Scaled n-MOSFET ISBN: 1681733870 ISBN-13(EAN): 9781681733876 Издательство: Mare Nostrum (Eurospan) Рейтинг: Цена: 61910.00 T Наличие на складе: Невозможна поставка. Описание: Low substrate/lattice temperature (< 300 K) operation of $n$-MOSFET has been effectively studied by device research and integration professionals in CMOS logic and analog products from the early 1970s. The author of this book previously composed an e-book in this area where he and his co-authors performed original simulation and modeling work on MOSFET threshold voltage and demonstrated that through efficient manipulation of threshold voltage values at lower substrate temperatures, superior degrees of reduction of subthreshold and off-state leakage current can be implemented in high-density logic and microprocessor chips fabricated in a silicon die. In this book, the author explores other device parameters such as channel inversion carrier mobility and its characteristic evolution as temperature on the die varies from 100‒300 K. Channel mobility affects both on-state drain current and subthreshold drain current and both drain current behaviors at lower temperatures have been modeled accurately and simulated for a 1 $u$ m channel length $n$-MOSFET. In addition, subthreshold slope which is an indicator of how speedily the device drain current can be switched between near off current and maximum drain current is an important device attribute to model at lower operating substrate temperatures. This book is the first to illustrate the fact that a single subthreshold slope value which is generally reported in textbook plots and research articles, is erroneous and at lower gate voltage below inversion, subthreshold slope value exhibits a variation tendency on applied gate voltage below threshold, i.e., varying depletion layer and vertical field induced surface band bending variations at the MOSFET channel surface. The author also will critically review the state-of-the art effectiveness of certain device architectures presently prevalent in the semiconductor industry below 45 nm node from the perspectives of device physical analysis at lower substrate temperature operating conditions. The book concludes with an emphasis on modeling simulations, inviting the device professionals to meet the performance bottlenecks emanating from inceptives present at these lower temperatures of operation of today's 10 nm device architectures.
Автор: Alex Lidow, Michael de Rooij, Johan Strydom, David Название: GaN Transistors for Efficient Power Conversion ISBN: 1119594146 ISBN-13(EAN): 9781119594147 Издательство: Wiley Рейтинг: Цена: 103430.00 T Наличие на складе: Невозможна поставка. Описание:
An up-to-date, practical guide on upgrading from silicon to GaN, and how to use GaN transistors in power conversion systems design
This updated, third edition of a popular book on GaN transistors for efficient power conversion has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout, and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices.
GaN Transistors for Efficient Power Conversion, 3rd Edition brings key updates to the chapters of Driving GaN Transistors; Modeling, Simulation, and Measurement of GaN Transistors; DC-DC Power Conversion; Envelope Tracking; and Highly Resonant Wireless Energy Transfer. It also offers new chapters on Thermal Management, Multilevel Converters, and Lidar, and revises many others throughout.
Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications
Updated with 35% new material, including three new chapters on Thermal Management, Multilevel Converters, Wireless Power, and Lidar
Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors
A valuable resource for professional engineers, systems designers, and electrical engineering students who need to fully understand the state-of-the-art
GaN Transistors for Efficient Power Conversion, 3rd Edition is an essential learning tool and reference guide that enables power conversion engineers to design energy-efficient, smaller, and more cost-effective products using GaN transistors.
Автор: Valizadeh Pouya Название: Field Effect Transistors, a Comprehensive Overview ISBN: 1119155495 ISBN-13(EAN): 9781119155492 Издательство: Wiley Рейтинг: Цена: 121390.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This book discusses modern-day Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) and future trends of transistor devices. This book provides an overview of Field Effect Transistors (FETs) by discussing the basic principles of FETs and exploring the latest technological developments in the field.
Автор: Cherie R. Kagan, Paul Andry Название: Thin-film transistors ISBN: 0824709594 ISBN-13(EAN): 9780824709594 Издательство: Taylor&Francis Рейтинг: Цена: 265410.00 T Наличие на складе: Невозможна поставка. Описание: This is a single-source treatment of developments in TFT production from international specialists
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