Self-standing Substrates, Inamuddin.; Rajender Boddula; Abdullah M Asiri
Автор: E.I. Givargizov Название: Oriented Crystallization on Amorphous Substrates ISBN: 1489925627 ISBN-13(EAN): 9781489925626 Издательство: Springer Рейтинг: Цена: 174150.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: i.e., they have been grown on a single-crystalline substrate, and principal trends, e.g., in the evolution of integrated circuits (lCs), have been based on continuing reduction in feature size and increase in the number of components per chip.
Автор: Swagata Samanta; Pallab Banerji; Pranabendu Gangul Название: Photonic Waveguide Components on Silicon Substrate ISBN: 9811513104 ISBN-13(EAN): 9789811513107 Издательство: Springer Рейтинг: Цена: 46570.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This book can be a useful reference for students, researchers, and fabrication engineers working in the areas of integrated optics, optical communications, laser technology and optical lithography for device manufacturing.
Автор: Cheng Название: Substrate Integrated Antennas and Arrays ISBN: 1498714536 ISBN-13(EAN): 9781498714532 Издательство: Taylor&Francis Рейтинг: Цена: 163330.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание:
Substrate Integrated Antennas and Arrays provides a single source for cutting-edge information on substrate integrated circuits (SICs), substrate integrated waveguide (SIW) feeding networks, SIW slot array antennas, SIC traveling-wave antennas, SIW feeding antennas, SIW monopulse antennas, and SIW multibeam antennas. Inspired by the author's extensive research, this comprehensive book:
Describes a revolutionary SIC-based antenna technique with the potential to replace existing antenna technologies
Examines theoretical and experimental results connected to electrical and mechanical performance
Explains how to overcome difficulties in meeting bandwidth, gain, and efficiency specifications
Substrate Integrated Antennas and Arrays offers valuable insight into the state of the art of SIC and SIW antenna technologies, presenting research useful to the development of wireless communication base station antennas, portable microwave point-to-point systems, collision avoidance radars, conformal antennas, and satellite antennas.
Автор: Raphael Hellwig Название: Alkyne?Based Nanostructures on Silver Substrates ISBN: 3030009963 ISBN-13(EAN): 9783030009960 Издательство: Springer Рейтинг: Цена: 102480.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание:
Acetylenic precursors are important reactants for creating carbon-based architectures via linkage reactions. While their capability of forming intermolecular bonds is well investigated in solution, very few systematic studies have been carried out to create alkyne-based nanostructures on metal substrates under ultra-high vacuum conditions. Synthesizing extended and regular carbon scaffolds requires a detailed knowledge of alkyne chemistry in order to control reaction pathways and limit unwanted side reactions. Using the bottom-up approach on metal surfaces, the authors establish protocols to fabricate regular architectures built up by the on-surface formation of selective organometallic and C-C bonds with thoughtfully designed alkyne-functionalized monomers. The structural and functional properties of the resulting organometallic and covalent nanostructures are characterized by means of scanning tunneling microscopy. The results open up new perspectives in the fields of heterogeneous catalysis and the on-surface synthesis of functional interfaces under mild reaction conditions.
Автор: E.I. Givargizov Название: Oriented Crystallization on Amorphous Substrates ISBN: 030643122X ISBN-13(EAN): 9780306431227 Издательство: Springer Рейтинг: Цена: 200260.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: i.e., they have been grown on a single-crystalline substrate, and principal trends, e.g., in the evolution of integrated circuits (lCs), have been based on continuing reduction in feature size and increase in the number of components per chip.
Автор: Li Название: Advances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates ISBN: 1605110388 ISBN-13(EAN): 9781605110387 Издательство: Cambridge Academ Рейтинг: Цена: 65470.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Автор: Li Название: Advances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates ISBN: 1107408563 ISBN-13(EAN): 9781107408562 Издательство: Cambridge Academ Цена: 28510.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Автор: Buccella Pietro, Stefanucci Camillo, Kayal Maher Название: Parasitic Substrate Coupling in High Voltage Integrated Circuits: Minority and Majority Carriers Propagation in Semiconductor Substrate ISBN: 3030089762 ISBN-13(EAN): 9783030089764 Издательство: Springer Рейтинг: Цена: 93160.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This book introduces a new approach to model and predict substrate parasitic failures in integrated circuits with standard circuit design tools.The injection of majority and minority carriers in the substrate is a recurring problem in smart power ICs containing high voltage, high current switching devices besides sensitive control, protection and signal processing circuits.The injection of parasitic charges leads to the activation of substrate bipolar transistors. This book explores how these events can be evaluated for a wide range of circuit topologies. To this purpose, new generalized devices implemented in Verilog-A are used to model the substrate with standard circuit simulators. This approach was able to predict for the first time the activation of a latch-up in real circuits through post-layout SPICE simulation analysis.
Discusses substrate modeling and circuit-level simulation of parasitic bipolar device coupling effects in integrated circuits; Includes circuit back-annotation of the parasitic lateral n-p-n and vertical p-n-p bipolar transistors in the substrate; Uses Spice for simulation and characterization of parasitic bipolar transistors, latch-up of the parasitic p-n-p-n structure, and electrostatic discharge (ESD) protection devices; Offers design guidelines to reduce couplings by adding specific protections.
Автор: Nabil Shovon Ashraf Название: Low Substrate Temperature Modeling Outlook of Scaled n-MOSFET ISBN: 1681733870 ISBN-13(EAN): 9781681733876 Издательство: Mare Nostrum (Eurospan) Рейтинг: Цена: 61910.00 T Наличие на складе: Невозможна поставка. Описание: Low substrate/lattice temperature (< 300 K) operation of $n$-MOSFET has been effectively studied by device research and integration professionals in CMOS logic and analog products from the early 1970s. The author of this book previously composed an e-book in this area where he and his co-authors performed original simulation and modeling work on MOSFET threshold voltage and demonstrated that through efficient manipulation of threshold voltage values at lower substrate temperatures, superior degrees of reduction of subthreshold and off-state leakage current can be implemented in high-density logic and microprocessor chips fabricated in a silicon die. In this book, the author explores other device parameters such as channel inversion carrier mobility and its characteristic evolution as temperature on the die varies from 100‒300 K. Channel mobility affects both on-state drain current and subthreshold drain current and both drain current behaviors at lower temperatures have been modeled accurately and simulated for a 1 $u$ m channel length $n$-MOSFET. In addition, subthreshold slope which is an indicator of how speedily the device drain current can be switched between near off current and maximum drain current is an important device attribute to model at lower operating substrate temperatures. This book is the first to illustrate the fact that a single subthreshold slope value which is generally reported in textbook plots and research articles, is erroneous and at lower gate voltage below inversion, subthreshold slope value exhibits a variation tendency on applied gate voltage below threshold, i.e., varying depletion layer and vertical field induced surface band bending variations at the MOSFET channel surface. The author also will critically review the state-of-the art effectiveness of certain device architectures presently prevalent in the semiconductor industry below 45 nm node from the perspectives of device physical analysis at lower substrate temperature operating conditions. The book concludes with an emphasis on modeling simulations, inviting the device professionals to meet the performance bottlenecks emanating from inceptives present at these lower temperatures of operation of today's 10 nm device architectures.
Автор: Nabil Shovon Ashraf Название: Low Substrate Temperature Modeling Outlook of Scaled n-MOSFET ISBN: 1681733854 ISBN-13(EAN): 9781681733852 Издательство: Mare Nostrum (Eurospan) Рейтинг: Цена: 41580.00 T Наличие на складе: Невозможна поставка. Описание: Low substrate/lattice temperature (< 300 K) operation of $n$-MOSFET has been effectively studied by device research and integration professionals in CMOS logic and analog products from the early 1970s. The author of this book previously composed an e-book in this area where he and his co-authors performed original simulation and modeling work on MOSFET threshold voltage and demonstrated that through efficient manipulation of threshold voltage values at lower substrate temperatures, superior degrees of reduction of subthreshold and off-state leakage current can be implemented in high-density logic and microprocessor chips fabricated in a silicon die. In this book, the author explores other device parameters such as channel inversion carrier mobility and its characteristic evolution as temperature on the die varies from 100‒300 K. Channel mobility affects both on-state drain current and subthreshold drain current and both drain current behaviors at lower temperatures have been modeled accurately and simulated for a 1 $u$ m channel length $n$-MOSFET. In addition, subthreshold slope which is an indicator of how speedily the device drain current can be switched between near off current and maximum drain current is an important device attribute to model at lower operating substrate temperatures. This book is the first to illustrate the fact that a single subthreshold slope value which is generally reported in textbook plots and research articles, is erroneous and at lower gate voltage below inversion, subthreshold slope value exhibits a variation tendency on applied gate voltage below threshold, i.e., varying depletion layer and vertical field induced surface band bending variations at the MOSFET channel surface. The author also will critically review the state-of-the art effectiveness of certain device architectures presently prevalent in the semiconductor industry below 45 nm node from the perspectives of device physical analysis at lower substrate temperature operating conditions. The book concludes with an emphasis on modeling simulations, inviting the device professionals to meet the performance bottlenecks emanating from inceptives present at these lower temperatures of operation of today's 10 nm device architectures.
Автор: Edoardo Charbon; Ranjit Gharpurey; Paolo Miliozzi; Название: Substrate Noise ISBN: 1475774397 ISBN-13(EAN): 9781475774399 Издательство: Springer Рейтинг: Цена: 93160.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: In the past decade, substrate noise has had a constant and significant impact on the design of analog and mixed-signal integrated circuits. Substrate Noise: Analysis and Optimization for IC Design addresses the main problems posed by substrate noise from both an IC and a CAD designer perspective.
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