Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems Technology, Modeling and Circuit Applications, Niccolo Rinaldi, Michael Schroter
Автор: Dae Mann Kim; Yoon-Ha Jeong Название: Nanowire Field Effect Transistors: Principles and Applications ISBN: 1461481236 ISBN-13(EAN): 9781461481232 Издательство: Springer Рейтинг: Цена: 113190.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This book covers the basic physics and electronics leading to the conceptual understanding of nanowire field effect transistors (NWFET) and its practical aspects. It discusses mainstream applications and emphasizes their basic concepts.
Автор: Ahmet Bindal; Sotoudeh Hamedi-Hagh Название: Silicon Nanowire Transistors ISBN: 331927175X ISBN-13(EAN): 9783319271750 Издательство: Springer Рейтинг: Цена: 74530.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: These include an SRAM, a baseband spread spectrum transmitter, a neuron cell and a Field Programmable Gate Array (FPGA) platform in the digital domain, as well as high bandwidth single-stage and operational amplifiers, RF communication circuits in the analog domain, in order to show this technology`s true potential for the next generation VLSI.
Автор: Wolfgang Rainer Fahrner Название: Amorphous Silicon / Crystalline Silicon Heterojunction Solar Cells ISBN: 3642370381 ISBN-13(EAN): 9783642370380 Издательство: Springer Рейтинг: Цена: 46570.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание:
Introduction.- Useful material parameters.- Manufacturing.- Concepts.- Problems and challenges.- Measurement techniques.- Simulation.- Long term stability and degradation.- State of the Art.- Silicon based heterojunction solar cells in China.
Автор: Shiraki Yasuhiro, Usami Noritaka, Shiraki Y. Название: Silicon-Germanium (Sige) Nanostructures: Production, Properties and Applications in Electronics ISBN: 0081017391 ISBN-13(EAN): 9780081017395 Издательство: Elsevier Science Рейтинг: Цена: 202120.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices.The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain engineering and modelling. Part three covers the material properties of SiGe nanostructures, including chapters on such topics as strain-induced defects, transport properties and microcavities and quantum cascade laser structures. In Part four, devices utilising SiGe alloys are discussed. Chapters cover ultra large scale integrated applications, MOSFETs and the use of SiGe in different types of transistors and optical devices.With its distinguished editors and team of international contributors, Silicon-germanium (SiGe) nanostructures is a standard reference for researchers focusing on semiconductor devices and materials in industry and academia, particularly those interested in nanostructures.
Автор: Claeys Название: Metal Impurities in Silicon- and Germanium-Based Technologies ISBN: 3319939246 ISBN-13(EAN): 9783319939247 Издательство: Springer Рейтинг: Цена: 158380.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: material science, defect engineering, device processing, defect and device characterization, and device physics and engineering.
Автор: M. Willander Название: Silicon-Germanium Strained Layers and Heterostructures, ISBN: 0127521836 ISBN-13(EAN): 9780127521831 Издательство: Elsevier Science Рейтинг: Цена: 196510.00 T Наличие на складе: Поставка под заказ. Описание: The study of Silicone Germanium strained layers has implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices. This work describes its developments in technology and modelling. It also includes a bibliography of over 400 papers providing an overview of the subject.
Автор: Dae Mann Kim; Yoon-Ha Jeong Название: Nanowire Field Effect Transistors: Principles and Applications ISBN: 1493945726 ISBN-13(EAN): 9781493945726 Издательство: Springer Рейтинг: Цена: 95770.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This book covers the basic physics and electronics leading to the conceptual understanding of nanowire field effect transistors (NWFET) and its practical aspects. It discusses mainstream applications and emphasizes their basic concepts.
Автор: Nabil Shovon Ashraf Название: Low Substrate Temperature Modeling Outlook of Scaled n-MOSFET ISBN: 1681733854 ISBN-13(EAN): 9781681733852 Издательство: Mare Nostrum (Eurospan) Рейтинг: Цена: 41580.00 T Наличие на складе: Невозможна поставка. Описание: Low substrate/lattice temperature (< 300 K) operation of $n$-MOSFET has been effectively studied by device research and integration professionals in CMOS logic and analog products from the early 1970s. The author of this book previously composed an e-book in this area where he and his co-authors performed original simulation and modeling work on MOSFET threshold voltage and demonstrated that through efficient manipulation of threshold voltage values at lower substrate temperatures, superior degrees of reduction of subthreshold and off-state leakage current can be implemented in high-density logic and microprocessor chips fabricated in a silicon die. In this book, the author explores other device parameters such as channel inversion carrier mobility and its characteristic evolution as temperature on the die varies from 100‒300 K. Channel mobility affects both on-state drain current and subthreshold drain current and both drain current behaviors at lower temperatures have been modeled accurately and simulated for a 1 $u$ m channel length $n$-MOSFET. In addition, subthreshold slope which is an indicator of how speedily the device drain current can be switched between near off current and maximum drain current is an important device attribute to model at lower operating substrate temperatures. This book is the first to illustrate the fact that a single subthreshold slope value which is generally reported in textbook plots and research articles, is erroneous and at lower gate voltage below inversion, subthreshold slope value exhibits a variation tendency on applied gate voltage below threshold, i.e., varying depletion layer and vertical field induced surface band bending variations at the MOSFET channel surface. The author also will critically review the state-of-the art effectiveness of certain device architectures presently prevalent in the semiconductor industry below 45 nm node from the perspectives of device physical analysis at lower substrate temperature operating conditions. The book concludes with an emphasis on modeling simulations, inviting the device professionals to meet the performance bottlenecks emanating from inceptives present at these lower temperatures of operation of today's 10 nm device architectures.
Автор: Nabil Shovon Ashraf Название: Low Substrate Temperature Modeling Outlook of Scaled n-MOSFET ISBN: 1681733870 ISBN-13(EAN): 9781681733876 Издательство: Mare Nostrum (Eurospan) Рейтинг: Цена: 61910.00 T Наличие на складе: Невозможна поставка. Описание: Low substrate/lattice temperature (< 300 K) operation of $n$-MOSFET has been effectively studied by device research and integration professionals in CMOS logic and analog products from the early 1970s. The author of this book previously composed an e-book in this area where he and his co-authors performed original simulation and modeling work on MOSFET threshold voltage and demonstrated that through efficient manipulation of threshold voltage values at lower substrate temperatures, superior degrees of reduction of subthreshold and off-state leakage current can be implemented in high-density logic and microprocessor chips fabricated in a silicon die. In this book, the author explores other device parameters such as channel inversion carrier mobility and its characteristic evolution as temperature on the die varies from 100‒300 K. Channel mobility affects both on-state drain current and subthreshold drain current and both drain current behaviors at lower temperatures have been modeled accurately and simulated for a 1 $u$ m channel length $n$-MOSFET. In addition, subthreshold slope which is an indicator of how speedily the device drain current can be switched between near off current and maximum drain current is an important device attribute to model at lower operating substrate temperatures. This book is the first to illustrate the fact that a single subthreshold slope value which is generally reported in textbook plots and research articles, is erroneous and at lower gate voltage below inversion, subthreshold slope value exhibits a variation tendency on applied gate voltage below threshold, i.e., varying depletion layer and vertical field induced surface band bending variations at the MOSFET channel surface. The author also will critically review the state-of-the art effectiveness of certain device architectures presently prevalent in the semiconductor industry below 45 nm node from the perspectives of device physical analysis at lower substrate temperature operating conditions. The book concludes with an emphasis on modeling simulations, inviting the device professionals to meet the performance bottlenecks emanating from inceptives present at these lower temperatures of operation of today's 10 nm device architectures.
Автор: Shubham Sahay, Mamidala Jagadesh Kumar Название: Junctionless Field–Effect Transistors: Design, Modeling, and Simulation ISBN: 1119523532 ISBN-13(EAN): 9781119523536 Издательство: Wiley Рейтинг: Цена: 118220.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание:
A comprehensive one-volume reference on current JLFET methods, techniques, and research
Advancements in transistor technology have driven the modern smart-device revolution--many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop referenceon the study and research on JLFETs
This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource:
Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFET
Examines various approaches for analytical and compact modeling of JLFETs in circuit design and simulation
Explains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETs
Suggests research directions and potential applications of JLFETs
Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices.
Автор: Saha Samar K. Название: Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond ISBN: 1482240661 ISBN-13(EAN): 9781482240665 Издательство: Taylor&Francis Рейтинг: Цена: 209270.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This modern treatise on compact models for circuit computer-aided design (CAD) presents industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical MOS models.
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