Nanoscale Transistors, Mark Lundstrom; Jing Guo

Автор: S.D. Brotherton
Название: Introduction to Thin Film Transistors: Physics and Technology of TFTs
ISBN: 3319000012 ISBN-13(EAN): 9783319000015
Издательство: Springer
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Цена: 69870.00 T
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Описание: This book surveys the technology and applications of TFTs, covering hydrogenated amorphous silicon, poly-crystalline silicon, transparent amorphous oxide semiconductors, organic semiconductors and others that form the core of the flat panel display industry.

Автор: Amit Chaudhry
Название: Fundamentals of Nanoscaled Field Effect Transistors
ISBN: 1493944827 ISBN-13(EAN): 9781493944828
Издательство: Springer
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Цена: 113180.00 T
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Описание: This book covers principles and theory of nanoscale transistors, including quantum mechanical tunneling and inversion layer quantization and solutions like high-k and strained-Si technology, alternate structures and graphene technology. Includes case studies.

Автор: Amit Chaudhry
Название: Fundamentals of Nanoscaled Field Effect Transistors
ISBN: 1461468213 ISBN-13(EAN): 9781461468219
Издательство: Springer
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Цена: 130610.00 T
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Описание: This book covers principles and theory of nanoscale transistors, including quantum mechanical tunneling and inversion layer quantization and solutions like high-k and strained-Si technology, alternate structures and graphene technology. Includes case studies.

Автор: Dufrene, Yves
Название: Life at the Nanoscale: Atomic Force Microscopy of Live Cells
ISBN: 9814267961 ISBN-13(EAN): 9789814267960
Издательство: Taylor&Francis
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Цена: 117390.00 T
Наличие на складе: Невозможна поставка.
Описание: Proceeding from basic fundamentals to applications, this volume provides a comprehensive overview of the use of AFM and related scanning probe microscopies for cell surface analysis. It covers all cell types, from viruses and protoplasts to bacteria and animal cells.

Автор: Seongil Im, Youn-Gyoung Chang, Jae Hoon Kim
Название: Photo-Excited Charge Collection Spectroscopy: Probing the traps in field-effect transistors (SpringerBriefs in Physics)
ISBN: 9400763913 ISBN-13(EAN): 9789400763913
Издательство: Springer
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Цена: 43530.00 T
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Описание: Solid state field-effect devices such as organic and inorganic-channel thin-film transistors (TFTs) have been expected to promote advances in display and sensor electronics.

Автор: Cherie R. Kagan, Paul Andry
Название: Thin-film transistors
ISBN: 0824709594 ISBN-13(EAN): 9780824709594
Издательство: Taylor&Francis
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Цена: 265410.00 T
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Описание: This is a single-source treatment of developments in TFT production from international specialists

Автор: Ioannis Kymissis
Название: Organic Field Effect Transistors
ISBN: 1441947116 ISBN-13(EAN): 9781441947116
Издательство: Springer
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Цена: 104480.00 T
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Описание: As a basic introduction to the subject for practitioners, this text will also be of interest to researchers looking for references that are not part of their subject area, focusing on materials and techniques useful for making integrated circuits.

Автор: Tobias Erlbacher
Название: Lateral Power Transistors in Integrated Circuits
ISBN: 3319004999 ISBN-13(EAN): 9783319004990
Издательство: Springer
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Цена: 130430.00 T
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Описание: This book details and compares recent advancements in the development of novel lateral power transistors (LDMOS devices) for integrated circuits in power electronic applications. It includes the state-of-the-art concept of double-acting RESURF topologies.

Автор: Juras Pozela
Название: Physics of High-Speed Transistors
ISBN: 0306446197 ISBN-13(EAN): 9780306446191
Издательство: Springer
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Цена: 204040.00 T
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Описание: Examines the physical principles and technological approaches that make high-speed transistors possible. This book includes discussions of maximum drift velocity in semiconductors, hot-electron transistors, and high-speed devices and integrated circuits.

Автор: Jeroen A. Croon; Willy M Sansen; Herman E. Maes
Название: Matching Properties of Deep Sub-Micron MOS Transistors
ISBN: 1441937188 ISBN-13(EAN): 9781441937186
Издательство: Springer
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Цена: 130590.00 T
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Описание: The model is illustrated by dimensioning the unit current cell of a current-steering D/A converter.The most commonly used methods to extract the matching properties of a technology are bench-marked with respect to model accuracy, measurement accuracy and speed, and physical contents of the extracted parameters.

Автор: Ting Lei
Название: Design, Synthesis, and Structure-Property Relationship Study of Polymer Field-Effect Transistors
ISBN: 3662456664 ISBN-13(EAN): 9783662456668
Издательство: Springer
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Цена: 93160.00 T
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Описание: The book summarizes Ting Lei`s PhD study on a series of novel conjugated polymers for field-effect transistors (FETs). Studies contain many aspects of polymer FETs, including backbone design, side-chain engineering, property study, conformation effects and device fabrication.