Organic Thin-Film Transistor Applications, 

Автор: Hood, John Linsley
Название: Valve and Transistor Audio Amplifiers
ISBN: 0750633565 ISBN-13(EAN): 9780750633567
Издательство: Elsevier Science
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Цена: 69610.00 T
Наличие на складе: Нет в наличии.

Автор: Thompson
Название: Transistor Scaling
ISBN: 1558998691 ISBN-13(EAN): 9781558998698
Издательство: Cambridge Academ
Рейтинг:
Цена: 33790.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. This book shares results and physical models related to MOSFETs and to discuss innovative approaches necessary to continue the transistor scaling. Expanded versions of presentations in the areas of technology development are featured

Автор: Keng C. Wu
Название: Transistor Circuits for Spacecraft Power System
ISBN: 1461353858 ISBN-13(EAN): 9781461353850
Издательство: Springer
Рейтинг:
Цена: 139750.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: As a stand-alone volume, Transistor Circuits For Spacecraft Power System presents numerous transistor circuits and building blocks associated with power electronics in general, and examines the major subsystem components for solar-based spacecraft power systems.

Автор: Lining Zhang; Mansun Chan
Название: Tunneling Field Effect Transistor Technology
ISBN: 3319316516 ISBN-13(EAN): 9783319316512
Издательство: Springer
Рейтинг:
Цена: 107130.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency.

Автор: Bahl, Inder
Название: Fundamentals of rf and microwave transistor amplifiers
ISBN: 0470391669 ISBN-13(EAN): 9780470391662
Издательство: Wiley
Рейтинг:
Цена: 168910.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Includes extensive design information in the form of equations, tables, graphs and examples. Offers an in-depth study of amplifiers. Simple design equations are included to help understand design concepts. Practical and simple to understand examples with over 70 fully solved.

Автор: Supriya Karmakar
Название: Novel Three-state Quantum Dot Gate Field Effect Transistor
ISBN: 8132216342 ISBN-13(EAN): 9788132216346
Издательство: Springer
Рейтинг:
Цена: 121110.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book explores fabrication and circuit modeling of quantum dot gate field effect transistor (QDGFET) and quantum dot gate NMOS inverter, introduces a circuit model of QDGFET based on Berkley Short Channel IGFET model and simulation of advanced circuits.

Автор: Chauhan,Yogesh Singh
Название: Gan Transistor Modeling For Rf And Power Electronics
ISBN: 0323998712 ISBN-13(EAN): 9780323998710
Издательство: Elsevier Science
Рейтинг:
Цена: 185270.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.

Автор: Nirmal D., Ajayan J.
Название: Handbook for III-V High Electron Mobility Transistor Technologies
ISBN: 0367729245 ISBN-13(EAN): 9780367729240
Издательство: Taylor&Francis
Рейтинг:
Цена: 54090.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The book covers III-V high electron mobility transistors (HEMT) and their basic physics, materials, fabrication, reliability, modeling and simulation with detailed DC, RF and breakdown performances of high electron mobility transistors, with reference to AlGaN/GaN HEMTs, MoS HEMT, InP HEMTs and DG-HEMTs.

Автор: Supriya Karmakar
Название: Novel Three-state Quantum Dot Gate Field Effect Transistor
ISBN: 8132234901 ISBN-13(EAN): 9788132234906
Издательство: Springer
Рейтинг:
Цена: 95770.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book explores fabrication and circuit modeling of quantum dot gate field effect transistor (QDGFET) and quantum dot gate NMOS inverter, introduces a circuit model of QDGFET based on Berkley Short Channel IGFET model and simulation of advanced circuits.

Автор: Park Byung-Eun, Ishiwara Hiroshi, Okuyama Masanori
Название: Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications
ISBN: 9811512116 ISBN-13(EAN): 9789811512117
Издательство: Springer
Рейтинг:
Цена: 139750.00 T
Наличие на складе: Нет в наличии.
Описание: This book is intended for periodontal residents and practicing periodontists who wish to incorporate the principles of moderate sedation into daily practice. Comprehensive airway management and rescue skills are then documented in detail so that the patient may be properly managed in the event that the sedation progresses beyond the intended level.

Автор: Tigelaar Howard
Название: How Transistor Area Shrank by 1 Million Fold
ISBN: 3030400239 ISBN-13(EAN): 9783030400231
Издательство: Springer
Рейтинг:
Цена: 46570.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: He describes for readers the key inventions and developments in science and engineering that overcame huge obstacles, enabling engineers to shrink transistor area by over 1 million fold and build billions of transistor switches that switch over a billion times a second, all on a piece of silicon smaller than a thumbnail.

Автор: Amara Amara; Olivier Rozeau
Название: Planar Double-Gate Transistor
ISBN: 9048181089 ISBN-13(EAN): 9789048181087
Издательство: Springer
Рейтинг:
Цена: 144410.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The aim of the editors here is to reinforce the synergy between the research activities on CMOS sub-32nm devices and the design of elementary circuits. The goal is to point out how we can apply new transistor structures to come up with new cells and concepts.