Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors, Korotcenkov

Автор: Ajay Kumar Srivastava
Название: Si Detectors and Characterization for HEP and Photon Science Experiment
ISBN: 3030195309 ISBN-13(EAN): 9783030195304
Издательство: Springer
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Цена: 111790.00 T
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Описание: This book reviews the HL-LHC experiments and the fourth-generation photon science experiments, discussing the latest radiation hardening techniques, optimization of device & process parameters using TCAD simulation tools, and the experimental characterization required to develop rad-hard Si detectors for x-ray induced surface damage and bulk damage by hadronic irradiation.Consisting of eleven chapters, it introduces various types of strip and pixel detector designs for the current upgrade, radiation, and dynamic range requirement of the experiments, and presents an overview of radiation detectors, especially Si detectors. It also describes the design of pixel detectors, experiments and characterization of Si detectors.The book is intended for researchers and master’s level students with an understanding of radiation detector physics. It provides a concept that uses TCAD simulation to optimize the electrical performance of the devices used in the harsh radiation environment of the colliders and at XFEL.

Автор: Korotcenkov
Название: Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors
ISBN: 303120509X ISBN-13(EAN): 9783031205095
Издательство: Springer
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Цена: 83850.00 T
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Описание: Three-volumes book “Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors” is the first to cover both chemical sensors and biosensors and all types of photodetectors and radiation detectors based on II-VI semiconductors. It contains a comprehensive and detailed analysis of all aspects of the application of II-VI semiconductors in these devices. The second volume “Photodetectors” of a three-volume set, focus on the consideration of all types of optical detectors, including IR detectors, visible and UV photodetectors. This consideration includes both the fundamentals of the operation of detectors and the peculiarities of their manufacture and use. In particular, describes numerous strategies for their fabrication and characterization. An analysis of new trends in development of II-VI semiconductors-based photodetectors such as graphene/HgCdTe-, nanowire- and quantum dot-based photodetectors, as well as solution-processed, multicolor, flexible and self-powered photodetectors, are also given.

Автор: Korotcenkov
Название: Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors
ISBN: 3031195302 ISBN-13(EAN): 9783031195303
Издательство: Springer
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Цена: 144410.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Three-volumes book “Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors” is the first to cover both chemical sensors and biosensors and all types of photodetectors and radiation detectors based on II-VI semiconductors. It contains a comprehensive and detailed analysis of all aspects of the application of II-VI semiconductors in these devices. The first volume "Materials and Technologies" of a three-volume set describes the physical, chemical and electronic properties of II-VI compounds, which give rise to an increased interest in these semiconductors. Technologies that are used in the development of various devices based on II-VI connections, such as material synthesis, deposition, characterization, processing, and device fabrication, are also discussed in detail in this volume. It covers also topics related to synthesis and application of II-VI-based nanoparticles and quantum dots, as well their toxicity, biocompatibility and biofunctionalization.

Автор: Alan Owens
Название: Semiconductor Radiation Detectors
ISBN: 1138070742 ISBN-13(EAN): 9781138070745
Издательство: Taylor&Francis
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Цена: 224570.00 T
Наличие на складе: Невозможна поставка.
Описание: This book is a self-contained compendium examining all types of semiconductors and how they can be used in radiation detection applications. It is suitable for graduate students and established researchers in this and related fields.

Автор: Owens, Alan
Название: Semiconductor radiation detectors
ISBN: 0367779684 ISBN-13(EAN): 9780367779689
Издательство: Taylor&Francis
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Цена: 50010.00 T
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Описание: This book is a self-contained compendium examining all types of semiconductors and how they can be used in radiation detection applications. It is suitable for graduate students and established researchers in this and related fields.

Автор: Lutz Gerhard
Название: Semiconductor Radiation Detectors / Device Physics
ISBN: 3540716785 ISBN-13(EAN): 9783540716785
Издательство: Springer
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Цена: 95770.00 T
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Описание: Starting from basic principles, the author, whose own contributions to these developments have been significant, describes the rapidly growing field of modern semiconductor detectors used for energy and position measurement radiation. This development was stimulated by requirements in elementary particle physics where it has led to important scientific discoveries. It has now spread to many other fields of science and technology. The book is written in a didactic way and includes an introduction to semiconductor physics. The working principles of semiconductor radiation detectors are explained in an intuitive way, followed by formal quantitative analysis. Broad coverage is also given to electronic signal readout and to the subject of radiation damage. The book is the first to comprehensively cover the semiconductor radiation detectors currently in use. It is useful as a teaching guide and as a reference work for research and applications.

Автор: Zoran Jak?i?
Название: Micro and Nanophotonics for Semiconductor Infrared Detectors
ISBN: 3319096737 ISBN-13(EAN): 9783319096735
Издательство: Springer
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Цена: 121890.00 T
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Описание: This book offers the first systematic approach to numerous different MEMS and nanotechnology-based methods available for the improvement of photonic infrared detectors and points out to a path towards uncooled operation with the performance of cryogenically cooled devices.

Автор: Montero Бlvarez Daniel
Название: Near Infrared Detectors Based on Silicon Supersaturated with Transition Metals
ISBN: 3030638251 ISBN-13(EAN): 9783030638252
Издательство: Springer
Цена: 93160.00 T
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Описание: In particular, the work is focused in the integration of the Ti supersaturated Si material into a CMOS Image Sensor route, the technology of choice for imaging nowadays due to its low-cost and high resolution. This fact leaves the door open for further integration of supersaturated materials into CMOS Image Sensors.

Автор: Montero Бlvarez Daniel
Название: Near Infrared Detectors Based on Silicon Supersaturated with Transition Metals
ISBN: 3030638286 ISBN-13(EAN): 9783030638283
Издательство: Springer
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Цена: 93160.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: In particular, the work is focused in the integration of the Ti supersaturated Si material into a CMOS Image Sensor route, the technology of choice for imaging nowadays due to its low-cost and high resolution. This fact leaves the door open for further integration of supersaturated materials into CMOS Image Sensors.

Автор: Hayashi Hiroaki, Kimoto Natsumi, Asahara Takashi
Название: Photon Counting Detectors for X-ray Imaging: Physics and Applications
ISBN: 3030626822 ISBN-13(EAN): 9783030626822
Издательство: Springer
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Цена: 93160.00 T
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Описание: This book first provides readers with an introduction to the underlying physics and state-of-the-art application of photon counting detectors for X-ray imaging.

Автор: Jiandong Sun
Название: Field-effect Self-mixing Terahertz Detectors
ISBN: 3662486792 ISBN-13(EAN): 9783662486795
Издательство: Springer
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Цена: 93160.00 T
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Описание: A comprehensive device model considering both spatialdistributions of the terahertz field and the field-effect self-mixing factorhas been constructed for the first time in the thesis.

Автор: Sun Jiandong
Название: Field-Effect Self-Mixing Terahertz Detectors
ISBN: 3662569485 ISBN-13(EAN): 9783662569481
Издательство: Springer
Цена: 46570.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: A comprehensive device model considering both spatialdistributions of the terahertz field and the field-effect self-mixing factorhas been constructed for the first time in the thesis.