The Beginnings of Electron Microscopy - Part 1, Hawkes Peter W., Hytch Martin

Автор: Jill Guyonnet
Название: Ferroelectric Domain Walls
ISBN: 3319057499 ISBN-13(EAN): 9783319057491
Издательство: Springer
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Цена: 121110.00 T
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Описание: Using the nano metric resolution of atomic force microscopy techniques, this work explores the rich fundamental physics and novel functionalities of domain walls in ferroelectric materials, the nano scale interfaces separating regions of differently oriented spontaneous polarization.

Автор: T. Sakurai; Y. Watanabe
Название: Advances in Scanning Probe Microscopy
ISBN: 3642630847 ISBN-13(EAN): 9783642630842
Издательство: Springer
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Цена: 93160.00 T
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Описание: There have been many books published on scanning tunneling microscopy (STM), atomic force microscopy (AFM) and related subjects since Dr. Cerd Binnig and Dr. Heinrich Rohrer invented STM in 1982 and AFM in 1986 at IBM Research Center in Zurich, Switzerland.

Автор: Hawkes Peter W., Hytch Martin
Название: The Beginnings of Electron Microscopy - Part 2: Volume 221
ISBN: 0323989195 ISBN-13(EAN): 9780323989190
Издательство: Elsevier Science
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Цена: 189770.00 T
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Описание: The Beginnings of Electron Microscopy - Part 2, Volume 221 in the Advances in Imaging and Electron Physics series, highlights new advances in the field, with this new volume presenting interesting chapters on Recollections from the Early Years: Canada-USA, My Recollection of the Early History of Our Work on Electron Optics and the Electron Microscope, Walter Hoppe (1917-1986), Reminiscences of the Development of Electron Optics and Electron Microscope Instrumentation in Japan, Early Electron Microscopy in The Netherlands, L. L. Marton, 1901-1979, The Invention of the Electron Fresnel Interference Biprism, The Development of the Scanning Electron Microscope, and much more.

Автор: Pratibha L. Gai
Название: In-Situ Microscopy in Materials Research
ISBN: 1461378508 ISBN-13(EAN): 9781461378501
Издательство: Springer
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Цена: 204040.00 T
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Описание: 2 Lorentz Microscopy 287 Observation of Superconducting Vortices 288 3. 1 Superconducting Vortices Observed by Interference Microscopy 288 3. 1 Profile Mode 288 3. 2 Transmission Mode 291 3. 2 Superconducting Vortices Observed by Lorentz Microscopy 293 3. 3 Observation of Vortex Interaction with Pinning Centers 294 3. 1 Surface Steps 295 3.

Автор: Hawkes, Peter W.
Название: Computer Techniques For Image Processing In Electron Microscopy,214
ISBN: 0128209992 ISBN-13(EAN): 9780128209998
Издательство: Elsevier Science
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Цена: 202120.00 T
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Описание:

Computer Techniques for Image Processing in Electron Microscopy, Volume 214 in the Advances in Imaging and Electron Physics series, presents the latest advances in the field, with this new volume covering Image Formation Theory, The Discrete Fourier Transform, Analytic Images, The Image and Diffraction Plane Problem: Uniqueness, The Image and Diffraction Plane Problem: Numerical Methods, The Image and Diffraction Plane Problem: Computational Trials, Alternative Data for the Phase Determination, The Hardware of Digital Image Handling, Basic Software or Digital Image Handling, Improc, and much more.

Автор: Jill Guyonnet
Название: Ferroelectric Domain Walls
ISBN: 3319382772 ISBN-13(EAN): 9783319382777
Издательство: Springer
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Цена: 87060.00 T
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Описание: Using the nano metric resolution of atomic force microscopy techniques, this work explores the rich fundamental physics and novel functionalities of domain walls in ferroelectric materials, the nano scale interfaces separating regions of differently oriented spontaneous polarization.

Автор: Efstathios K. Polychroniadis; Ahmet Yavuz Oral; Me
Название: International Multidisciplinary Microscopy Congress
ISBN: 3319377094 ISBN-13(EAN): 9783319377094
Издательство: Springer
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Цена: 174130.00 T
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Описание: The International Multidisciplinary Microscopy Congress (INTERM2013) was organized on October 10-13, 2013.

Автор: Paula M. Vilarinho; Yossi Rosenwaks; Angus Kingon
Название: Scanning Probe Microscopy: Characterization, Nanofabrication and Device Application of Functional Materials
ISBN: 1402030177 ISBN-13(EAN): 9781402030178
Издательство: Springer
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Цена: 371750.00 T
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Описание: Starting with the general properties of functional materials the authors present an updated overview of the fundamentals of Scanning Probe Techniques and the application of SPM techniques to the characterization of specified functional materials such as piezoelectric and ferroelectric and to the fabrication of some nano electronic devices.

Автор: Weilie Zhou; Zhong Lin Wang
Название: Scanning Microscopy for Nanotechnology
ISBN: 1441922091 ISBN-13(EAN): 9781441922090
Издательство: Springer
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Цена: 139310.00 T
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Описание: This book presents scanning electron microscopy (SEM) fundamentals and applications for nanotechnology. It includes integrated fabrication techniques using the SEM, such as e-beam and FIB, and it covers in-situ nanomanipulation of materials. The book will appeal to nanomaterials researchers, and to SEM development specialists.

Автор: Umberto Celano
Название: Electrical Atomic Force Microscopy for Nanoelectronics
ISBN: 3030156117 ISBN-13(EAN): 9783030156114
Издательство: Springer
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Цена: 158380.00 T
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Описание: The tremendous impact of electronic devices on our lives is the result of continuous improvements of the billions of nanoelectronic components inside integrated circuits (ICs). However, ultra-scaled semiconductor devices require nanometer control of the many parameters essential for their fabrication. Through the years, this created a strong alliance between microscopy techniques and IC manufacturing. This book reviews the latest progress in IC devices, with emphasis on the impact of electrical atomic force microscopy (AFM) techniques for their development. The operation principles of many techniques are introduced, and the associated metrology challenges described. Blending the expertise of industrial specialists and academic researchers, the chapters are dedicated to various AFM methods and their impact on the development of emerging nanoelectronic devices. The goal is to introduce the major electrical AFM methods, following the journey that has seen our lives changed by the advent of ubiquitous nanoelectronics devices, and has extended our capability to sense matter on a scale previously inaccessible.

Автор: Celano Umberto
Название: Electrical Atomic Force Microscopy for Nanoelectronics
ISBN: 3030156141 ISBN-13(EAN): 9783030156145
Издательство: Springer
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Цена: 158380.00 T
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Описание: The tremendous impact of electronic devices on our lives is the result of continuous improvements of the billions of nanoelectronic components inside integrated circuits (ICs). This book reviews the latest progress in IC devices, with emphasis on the impact of electrical atomic force microscopy (AFM) techniques for their development.

Автор: Hÿtch Martin, Hawkes Peter W.
Название: Quantitative Atomic-Resolution Electron Microscopy, 217
ISBN: 0128246073 ISBN-13(EAN): 9780128246078
Издательство: Elsevier Science
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Цена: 189770.00 T
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Описание: Quantitative Atomic-Resolution Electron Microscopy, Volume 217, the latest release in the Advances in Imaging and Electron Physics series merges two long-running serials, Advances in Electronics and Electron Physics and Advances in Optical and Electron Microscopy. The series features extended articles on the physics of electron devices (especially semiconductor devices), particle optics at high and low energies, microlithography, image science, digital image processing, electromagnetic wave propagation, electron microscopy, and the computing methods. Chapters in this release include Statistical parameter estimation theory, Efficient fitting algorithm, Statistics-based atom counting, Atom column detection, Optimal experiment design for nanoparticle atom-counting from ADF STEM images, and more.

• Contains contributions from leading authorities on the subject matter
• Informs and updates on the latest developments in the field of imaging and electron physics
• Provides practitioners interested in microscopy, optics, image processing, mathematical morphology, electromagnetic fields, electrons and ion emission with a valuable resource