Presents applied theory and advanced simulation techniques for electric machines and drives
This book combines the knowledge of experts from both academia and the software industry to present theories of multiphysics simulation by design for electrical machines, power electronics, and drives. The comprehensive design approach described within supports new applications required by technologies sustaining high drive efficiency. The highlighted framework considers the electric machine at the heart of the entire electric drive. The book also emphasizes the simulation by design concept--a concept that frames the entire highlighted design methodology, which is described and illustrated by various advanced simulation technologies.
Multiphysics Simulation by Design for Electrical Machines, Power Electronics and Drives begins with the basics of electrical machine design and manufacturing tolerances. It also discusses fundamental aspects of the state of the art design process and includes examples from industrial practice. It explains FEM-based analysis techniques for electrical machine design--providing details on how it can be employed in ANSYS Maxwell software. In addition, the book covers advanced magnetic material modeling capabilities employed in numerical computation; thermal analysis; automated optimization for electric machines; and power electronics and drive systems. This valuable resource:
Delivers the multi-physics know-how based on practical electric machine design methodologies
Provides an extensive overview of electric machine design optimization and its integration with power electronics and drives
Incorporates case studies from industrial practice and research and development projects
Multiphysics Simulation by Design for Electrical Machines, Power Electronics and Drives is an incredibly helpful book for design engineers, application and system engineers, and technical professionals. It will also benefit graduate engineering students with a strong interest in electric machines and drives.
Автор: Liu Название: Modeling and Simulation for Microelectronic Packaging Assembly - Manufacturing, Reliability and Testing ISBN: 0470827807 ISBN-13(EAN): 9780470827802 Издательство: Wiley Рейтинг: Цена: 116110.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: An understanding of modeling and simulation techniques is becoming increasingly essential for engineers and researchers working with microelectronic packaging, interconnection design, and assembly manufacturing. This book shows for the first time how to model and simulate various processes in manufacturing, reliability, and testing.
Автор: Li Название: SiP-System in Package Design and Simulation: Mento r Graphics Expedition Enterprise Flow Advanced Des ign Guide ISBN: 1119045932 ISBN-13(EAN): 9781119045939 Издательство: Wiley Рейтинг: Цена: 127720.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: An advanced reference documenting, in detail, every step of a real System-in-Package (SiP) design flow Written by an engineer at the leading edge of SiP design and implementation, this book demonstrates how to design SiPs using Mentor EE Flow.
Автор: Shubham Sahay, Mamidala Jagadesh Kumar Название: Junctionless Field–Effect Transistors: Design, Modeling, and Simulation ISBN: 1119523532 ISBN-13(EAN): 9781119523536 Издательство: Wiley Рейтинг: Цена: 118220.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание:
A comprehensive one-volume reference on current JLFET methods, techniques, and research
Advancements in transistor technology have driven the modern smart-device revolution--many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop referenceon the study and research on JLFETs
This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource:
Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFET
Examines various approaches for analytical and compact modeling of JLFETs in circuit design and simulation
Explains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETs
Suggests research directions and potential applications of JLFETs
Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices.
Автор: R. Jacob Baker Название: Cmos: Circuit Design, Layout, and Simulation ISBN: 1119481511 ISBN-13(EAN): 9781119481515 Издательство: Wiley Рейтинг: Цена: 128780.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание:
A revised guide to the theory and implementation of CMOS analog and digital IC design
The fourth edition of CMOS: Circuit Design, Layout, and Simulation is an updated guide to the practical design of both analog and digital integrated circuits. The author--a noted expert on the topic--offers a contemporary review of a wide range of analog/digital circuit blocks including: phase-locked-loops, delta-sigma sensing circuits, voltage/current references, op-amps, the design of data converters, and switching power supplies.
CMOS includes discussions that detail the trade-offs and considerations when designing at the transistor-level. The companion website contains numerous examples for many computer-aided design (CAD) tools. Using the website enables readers to recreate, modify, or simulate the design examples presented throughout the book. In addition, the author includes hundreds of end-of-chapter problems to enhance understanding of the content presented. This newly revised edition:
- Provides in-depth coverage of both analog and digital transistor-level design techniques
- Discusses the design of phase- and delay-locked loops, mixed-signal circuits, data converters, and circuit noise
- Explores real-world process parameters, design rules, and layout examples
- Contains a new chapter on Power Electronics
Written for students in electrical and computer engineering and professionals in the field, the fourth edition of CMOS: Circuit Design, Layout, and Simulation is a practical guide to understanding analog and digital transistor-level design theory and techniques.
Автор: Dhiman Rohit, Chandel Rajeevan Название: VLSI and Post-CMOS Electronics: Design, Modelling and Simulation ISBN: 1839530510 ISBN-13(EAN): 9781839530517 Издательство: Неизвестно Рейтинг: Цена: 171660.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание:
VLSI, or Very-Large-Scale-Integration, is the practice of combining billions of transistors to create an integrated circuit. At present, VLSI circuits are realised using CMOS technology. However, the demand for ever smaller, more efficient circuits is now pushing the limits of CMOS. Post-CMOS refers to the possible future digital logic technologies beyond the CMOS scaling limits. This 2-volume set addresses the current state of the art in VLSI technologies and presents potential options for post-CMOS processes.
VLSI and Post-CMOS Electronics is a useful reference guide for researchers, engineers and advanced students working in the area of design and modelling of VLSI and post-CMOS devices and their circuits. Volume 1 focuses on design, modelling and simulation, including applications in low voltage and low power VLSI, and post-CMOS devices and circuits. Volume 2 addresses a wide range of devices, circuits and interconnects.
Автор: Srikant Satya Sai, Chaturvedi Prakash Kumar Название: Basic Electronics Engineering: Including Laboratory Manual ISBN: 9811374139 ISBN-13(EAN): 9789811374135 Издательство: Springer Рейтинг: Цена: 60550.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This book is primarily designed to serve as a textbook for undergraduate students of electrical, electronics, and computer engineering, but can also be used for primer courses across other disciplines of engineering and related sciences.
Using the load-pull method for RF and microwave power amplifier design
This new book on RF power amplifier design, by industry expert Dr. John F. Sevic, provides comprehensive treatment of RF PA design using the load-pull method, the most widely used and successful method of design. Intended for the newcomer to load-pull, or the seasoned expert, the book presents a systematic method of generation of load-pull contour data, and matching network design, to rapidly produce a RF PA with first-pass success. The method is suitable from HF to millimeter-wave bands, discrete or integrated, and for high-power applications. Those engaged in design or fundamental research will find this book useful, as will the student new to RF and interested in PA design.
The author presents a complete pedagogical methodology for RF PA design, starting with treatment of automated contour generation to identify optimum transistor performance with constant source power load-pull. Advanced methods of contour generation for simultaneous optimization of many variables, such as power, efficiency, and linearity are next presented. This is followed by treatment of optimum impedance identification using contour data to address specific objectives, such as optimum efficiency for a given linearity over a specific bandwidth. The final chapter presents a load-pull specific treatment of matching network design using load-pull contour data, applicable to both single-stage and multi-stage PA's. Both lumped and distributed matching network synthesis methods are described, with several worked matching network examples.
Readers will see a description of a powerful and accessible method that spans multiple RF PA disciplines, including 5G base-station and mobile applications, as well as sat-com and military applications; load-pull with CAD systems is also included. They will review information presented through a practical, hands-on perspective. The book:
Helps engineers develop systematic, accurate, and repeatable approach to RF PA design
Provides in-depth coverage of using the load-pull method for first-pass design success
Offers 150 illustrations and six case studies for greater comprehension of topics
Автор: Pushpakaran, Bejoy N (texas Tech Univ, Usa) Bayne, Stephen B (texas Tech Univ, Usa) Название: Modeling and electrothermal simulation of sic power devices: using silvaco (c) atlas ISBN: 9813237821 ISBN-13(EAN): 9789813237827 Издательство: World Scientific Publishing Рейтинг: Цена: 163680.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание:
The primary goal of this book is to provide a sound understanding of wide bandgap Silicon Carbide (SiC) power semiconductor device simulation using Silvaco(c) ATLAS Technology Computer Aided Design (TCAD) software. Physics-based TCAD modeling of SiC power devices can be extremely challenging due to the wide bandgap of the semiconductor material. The material presented in this book aims to shorten the learning curve required to start successful SiC device simulation by providing a detailed explanation of simulation code and the impact of various modeling and simulation parameters on the simulation results. Non-isothermal simulation to predict heat dissipation and lattice temperature rise in a SiC device structure under switching condition has been explained in detail. Key pointers including runtime error messages, code debugging, implications of using certain models and parameter values, and other factors beneficial to device simulation are provided based on the authors' experience while simulating SiC device structures. This book is useful for students, researchers, and semiconductor professionals working in the area of SiC semiconductor technology. Readers will be provided with the source code of several fully functional simulation programs that illustrate the use of Silvaco(c) ATLAS to simulate SiC power device structure, as well as supplementary material for download.
Автор: Fu Название: Integrated Power Devices and TCAD Simulation ISBN: 1138071854 ISBN-13(EAN): 9781138071858 Издательство: Taylor&Francis Рейтинг: Цена: 83690.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание:
From power electronics to power integrated circuits (PICs), smart power technologies, devices, and beyond, Integrated Power Devices and TCAD Simulation provides a complete picture of the power management and semiconductor industry. An essential reference for power device engineering students and professionals, the book not only describes the physics inside integrated power semiconductor devices such lateral double-diffused metal oxide semiconductor field-effect transistors (LDMOSFETs), lateral insulated-gate bipolar transistors (LIGBTs), and super junction LDMOSFETs but also delivers a simple introduction to power management systems.
Instead of abstract theoretical treatments and daunting equations, the text uses technology computer-aided design (TCAD) simulation examples to explain the design of integrated power semiconductor devices. It also explores next generation power devices such as gallium nitride power high electron mobility transistors (GaN power HEMTs).
Including a virtual process flow for smart PIC technology as well as a hard-to-find technology development organization chart, Integrated Power Devices and TCAD Simulation gives students and junior engineers a head start in the field of power semiconductor devices while helping to fill the gap between power device engineering and power management systems.
Автор: Perelmuter, V. M. Название: Renewable energy systems : ISBN: 149876598X ISBN-13(EAN): 9781498765985 Издательство: Taylor&Francis Рейтинг: Цена: 142910.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: The development of renewable sources for electrical energy has become a mainstream focus in the field of electrical engineering. This book can be used by both engineers and researchers working to develop new electrical systems and investigate existing ones. Additionally, it can serve as a guide for undergraduate and graduate students during their study of electrical fields. The electrical devices that are used in renewable sources have complicated inner structures, and methods of computer simulation make the development of these systems easier and faster. Simulink, and its toolbox SimPowerSystems, is the most popular means for simulation of electrical systems. The topic of wind-generator (WG) systems simulation merits detailed consideration; therefore, this text covers an in-depth exploration of the simulation of WG systems, systems with batteries, photovoltaic systems, fuel elements, microturbines, and hydroelectric systems.
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