Автор: Vassilis Paliouras; Johan Vounckx; Diederik Verkes Название: Integrated Circuit and System Design. Power and Timing Modeling, Optimization and Simulation ISBN: 3540290133 ISBN-13(EAN): 9783540290131 Издательство: Springer Рейтинг: Цена: 121110.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: Constitutes the refereed proceedings of the 15th International Workshop on Power and Timing Optimization and Simulation, PATMOS 2005, held in Leuven, Belgium in September 2005. The 74 full papers presented were organized in topical sections on low-power processors, code optimization for low-power, high-level design, low-power circuits, and more.
Автор: K. Antreich; R. Bulirsch; A. Gilg; P. Rentrop Название: Modeling, Simulation, and Optimization of Integrated Circuits ISBN: 3034894260 ISBN-13(EAN): 9783034894265 Издательство: Springer Рейтинг: Цена: 93160.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание:
In November 2001 the Mathematical Research Center at Oberwolfach, Germany, hosted the third Conference on Mathematical Models and Numerical Simulation in Electronic Industry. It brought together researchers in mathematics, electrical engineering and scientists working in industry.
The contributions to this volume try to bridge the gap between basic and applied mathematics, research in electrical engineering and the needs of industry.
Автор: Yung-Chun Wu; Yi-Ruei Jhan Название: 3D TCAD Simulation for CMOS Nanoeletronic Devices ISBN: 9811030650 ISBN-13(EAN): 9789811030659 Издательство: Springer Рейтинг: Цена: 93160.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This book demonstrates how to use the Synopsys Sentaurus TCAD 2014 version for the design and simulation of 3D CMOS (complementary metal–oxide–semiconductor) semiconductor nanoelectronic devices, while also providing selected source codes (Technology Computer-Aided Design, TCAD). Instead of the built-in examples of Sentaurus TCAD 2014, the practical cases presented here, based on years of teaching and research experience, are used to interpret and analyze simulation results of the physical and electrical properties of designed 3D CMOSFET (metal–oxide–semiconductor field-effect transistor) nanoelectronic devices.The book also addresses in detail the fundamental theory of advanced semiconductor device design for the further simulation and analysis of electric and physical properties of semiconductor devices. The design and simulation technologies for nano-semiconductor devices explored here are more practical in nature and representative of the semiconductor industry, and as such can promote the development of pioneering semiconductor devices, semiconductor device physics, and more practically-oriented approaches to teaching and learning semiconductor engineering. The book can be used for graduate and senior undergraduate students alike, while also offering a reference guide for engineers and experts in the semiconductor industry. Readers are expected to have some preliminary knowledge of the field.
Автор: Wu Yung-Chun, Jhan Yi-Ruei Название: 3D TCAD Simulation for CMOS Nanoeletronic Devices ISBN: 9811097798 ISBN-13(EAN): 9789811097799 Издательство: Springer Рейтинг: Цена: 79190.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This book demonstrates how to use the Synopsys Sentaurus TCAD 2014 version for the design and simulation of 3D CMOS (complementary metal–oxide–semiconductor) semiconductor nanoelectronic devices, while also providing selected source codes (Technology Computer-Aided Design, TCAD). Instead of the built-in examples of Sentaurus TCAD 2014, the practical cases presented here, based on years of teaching and research experience, are used to interpret and analyze simulation results of the physical and electrical properties of designed 3D CMOSFET (metal–oxide–semiconductor field-effect transistor) nanoelectronic devices.The book also addresses in detail the fundamental theory of advanced semiconductor device design for the further simulation and analysis of electric and physical properties of semiconductor devices. The design and simulation technologies for nano-semiconductor devices explored here are more practical in nature and representative of the semiconductor industry, and as such can promote the development of pioneering semiconductor devices, semiconductor device physics, and more practically-oriented approaches to teaching and learning semiconductor engineering. The book can be used for graduate and senior undergraduate students alike, while also offering a reference guide for engineers and experts in the semiconductor industry. Readers are expected to have some preliminary knowledge of the field.
Автор: Li Simon, Li Suihua Название: 3D TCAD Simulation for Semiconductor Processes, Devices and Optoelectronics ISBN: 1493942514 ISBN-13(EAN): 9781493942510 Издательство: Springer Цена: 102480.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: Technology computer-aided design, or TCAD, is critical to today's semiconductor technology and anybody working in this industry needs to know something about TCAD. This book is about how to use computer software to manufacture and test virtually semiconductor devices in 3D. It brings to life the topic of semiconductor device physics, with a hands-on, tutorial approach that de-emphasizes abstract physics and equations and emphasizes real practice and extensive illustrations. Coverage includes a comprehensive library of devices, representing the state of the art technology, such as SuperJunction LDMOS, GaN LED devices, etc.
Автор: Nadine Azemard; Lars Svensson Название: Integrated Circuit and System Design. Power and Timing Modeling, Optimization and Simulation ISBN: 354074441X ISBN-13(EAN): 9783540744412 Издательство: Springer Рейтинг: Цена: 93160.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: Constitutes the proceedings of the 17th International Workshop on Power and Timing Modeling, Optimization and Simulation, PATMOS 2007, held in Gothenburg, Sweden, in September 2007. This work contains papers organized in topical sections on high-level design, low power design techniques, low power analog circuits and low power applications.
Автор: Bertrand Hochet; Antonio J. Acosta; Manuel J. Bell Название: Integrated Circuit Design. Power and Timing Modeling, Optimization and Simulation ISBN: 3540441433 ISBN-13(EAN): 9783540441434 Издательство: Springer Рейтинг: Цена: 102480.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: Constituting the proceedings of the 12th International Workshop on Power and Timing Modeling, Optimization and Simulation, 2002, the papers have been organized into topical sections including: arithmetics; low-level modelling and characterization; asynchronous and adiabatic techniques.
Автор: Nishath K. Verghese; Timothy J. Schmerbeck; David Название: Simulation Techniques and Solutions for Mixed-Signal Coupling in Integrated Circuits ISBN: 0792395441 ISBN-13(EAN): 9780792395447 Издательство: Springer Рейтинг: Цена: 174130.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This text addresses two major issues of the mixed-signal coupling problem - how to simulate it and how to overcome it. It identifies some of the problems that will be encountered, gives examples of actual hardware experiences, offers simulation techniques and suggests possible solutions.
