Introduction to Semiconductor Materials & Devices (WSE), Tyagi

Автор: C. Claeys; E. Simoen
Название: Radiation Effects in Advanced Semiconductor Materials and Devices
ISBN: 3642077781 ISBN-13(EAN): 9783642077784
Издательство: Springer
Рейтинг:
Цена: 204970.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This wide-ranging book summarizes the current knowledge of radiation defects in semiconductors, outlining the shortcomings of present experimental and modelling techniques and giving an outlook on future developments. It also provides information on the application of sensors in nuclear power plants.

Автор: Demassa
Название: Digital Integrated Circuits (WSE)
ISBN: 0471108057 ISBN-13(EAN): 9780471108054
Издательство: Wiley
Рейтинг:
Цена: 244940.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This introduction to digital integrated circuits uses numerous problems and examples to clarify concepts. Emphasis is placed on the CMOS family of microchips.

Автор: Daniel
Название: Digital Design From Zero To One (WSE)
ISBN: 0471124478 ISBN-13(EAN): 9780471124474
Издательство: Wiley
Рейтинг:
Цена: 136170.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This text uses case histories and applications to provide clarity to the fundamentals of logic design. It places great emphasis on communication memory, interface and fuzzy logic, and features instructional graphics.

Автор: Daryanani
Название: Principles of Active Network Synthesis and Design (WSE)
ISBN: 0471195456 ISBN-13(EAN): 9780471195450
Издательство: Wiley
Рейтинг:
Цена: 270280.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Develops the fundamental principles of active and passive network synthesis in the light of practical design considerations for engineers. Suitable for a basic course on network synthesis or an intermediate course on circuits.

Автор: Livingston
Название: Electronic Properties of Engineering Materials (WSE)
ISBN: 047131627X ISBN-13(EAN): 9780471316275
Издательство: Wiley
Рейтинг:
Цена: 270280.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This text primarily explains the connection between the basic principles of chemistry and physics and the properties of engineering materials -- metals, semiconductors, polymers, ceramics, glasses, and composites. Coverage includes electrical, optical, magnetic, and superconducting properties.

Автор: Smith
Название: Electronics - Circuits & Devices 3e (WSE)
ISBN: 0471844462 ISBN-13(EAN): 9780471844464
Издательство: Wiley
Рейтинг:
Цена: 275560.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Latest edition of a popular text presents a modern introduction to electronics. Revisions include increased coverage of FETs Clampers, doping effects, Op amp, new material on CMOS devices and AC circuits, and the addition of analog electronics. Integrates circuits, semiconductors, logic elements, digital devices, and the microprocessor.

Автор: Osamu Ueda; Stephen J. Pearton
Название: Materials and Reliability Handbook for Semiconductor Optical and Electron Devices
ISBN: 1493901192 ISBN-13(EAN): 9781493901197
Издательство: Springer
Рейтинг:
Цена: 156720.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book covers reliability procedures for lasers and high speed electronics used in cell phones, satellites, data transmission systems and displays. Addresses reliability engineering, materials, reliability testing and electronic characterization.

Автор: Muller
Название: Device Electronics for Integrated Circuits 3e (WSE)
ISBN: 0471593982 ISBN-13(EAN): 9780471593980
Издательство: Wiley
Рейтинг:
Цена: 292460.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Provides the required information for a course in modern device electronics taken by undergraduate electrical engineers. This book offers coverage of silicon technology, several topics in basic semiconductor physics, and Hall effect sensors. It covers chapters on MOSFET, which focus on mobility variations and threshold voltage dependence.