Weng W. Chow; Stephan W. Koch Semiconductor-Laser Fundamentals 9783642083860

Варианты приобретения

Цена: 73990.00T
Кол-во:
Наличие: Поставка под заказ. Есть в наличии на складе поставщика.
Склад Америка: 230 шт.
При оформлении заказа до: 2025-07-28
Ориентировочная дата поставки: Август-начало Сентября
При условии наличия книги у поставщика.

Добавить в корзину

в Мои желания

Автор: Weng W. Chow; Stephan W. Koch
Название: Semiconductor-Laser Fundamentals
ISBN: 9783642083860
Издательство: Springer
Классификация:

Оптика

Инженерное дело: Общие вопросы

Промышленная химия

Электроника

Лазерные технологии и голография

ISBN-10: 3642083862
Обложка/Формат: Paperback
Страницы: 245
Вес: 0.36 кг.
Дата издания: 01.12.2010
Язык: English
Размер: 234 x 156 x 14
Основная тема: Physics
Подзаголовок: Physics of the Gain Materials
Ссылка на Издательство: Link
Рейтинг:
Поставляется из: Германии
Описание: Since Fall of 1993, when we completed the manuscript of our book Semi- conductor-Laser Physics W.W. Chow, S.W. Koch, and M. Sargent III (Springer, Berlin, Heidelberg, 1994)] many new and exciting developments have taken place in the world of semiconductor lasers. Novel laser and ampli- fier structures were developed, and others, for example, the VCSEL (vertical cavity surface emitting laser) and monolithic MOPA (master oscillator power amplifier), made the transition from research and development to production. When investigating some of these systems, we discovered instances when de- vice performance, and thus design depend critically on details of the gain medium properties, e.g., spectral shape and carrier density dependence of the gain and refractive index. New material systems were also introduced, with optical emission wave- lengths spanning from the mid-infrared to the ultraviolet. Particularly note- worthy are laser and light-emitting diodes based on the wide-bandgap group-III nitride and II VI compounds. These devices emit in the visible to ultra-violet wavelength range, which is important for the wide variety of optoelectronic applications. While these novel semiconductor-laser materi- als show many similarities with the more conventional near-infrared systems, they also possess rather different material parameter combinations. These dif- ferences appear as band structure modifications and as increased importance of Coulomb effects, such that, e.g., excitonic signatures resulting from the at- tractive electron-hole interaction are generally significantly more prominent in the wide bandgap systems.

Semiconductor-Laser Fundamentals, Weng W. Chow; Stephan W. Koch