CMOS SRAM Circuit Design and Parametric Test in Nano-Scaled Technologies, Andrei Pavlov; Manoj Sachdev

Автор: Vibhu Sharma; Francky Catthoor; Wim Dehaene
Название: SRAM Design for Wireless Sensor Networks
ISBN: 1489992154 ISBN-13(EAN): 9781489992154
Издательство: Springer
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Цена: 104480.00 T
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Описание: This reviews the most efficient circuit design techniques and trade-offs, and introduces new memory architecture techniques, sense amplifier circuits and voltage optimization methods for reducing the impact of variability in wireless sensor applications.

Автор: Oleg Semenov; Hossein Sarbishaei; Manoj Sachdev
Название: ESD Protection Device and Circuit Design for Advanced CMOS Technologies
ISBN: 9048178363 ISBN-13(EAN): 9789048178360
Издательство: Springer
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Цена: 130590.00 T
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Описание: This book makes an attempt to address the ESD design and implementation in a systematic manner. A design procedure involving device and circuit simulators is employed to optimize device and circuit parameters for optimal ESD as well as circuit performance.

Автор: Jo?o P. Oliveira; Jo?o Goes
Название: Parametric Analog Signal Amplification Applied to Nanoscale CMOS Technologies
ISBN: 148999873X ISBN-13(EAN): 9781489998736
Издательство: Springer
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Цена: 104480.00 T
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Описание: This book analyzes parametric amplification with emphasis on the MOS discrete-time implementation. Examples include a small gain amplifier, discrete-time mixer/IIR-Filter, and analog-to-digital converter. Offers experimental data validating the overall design.

Автор: Pieter Harpe; Andrea Baschirotto; Kofi A. A. Makin
Название: High-Performance AD and DA Converters, IC Design in Scaled Technologies, and Time-Domain Signal Processing
ISBN: 3319355554 ISBN-13(EAN): 9783319355559
Издательство: Springer
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Цена: 121890.00 T
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Описание: This book is based on the 18 tutorials presented during the 23rd workshop on Advances in Analog Circuit Design.

Автор: Michael Fulde
Название: Variation Aware Analog and Mixed-Signal Circuit Design in Emerging Multi-Gate CMOS Technologies
ISBN: 9048132797 ISBN-13(EAN): 9789048132799
Издательство: Springer
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Цена: 130610.00 T
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Описание: This book offers a technology-oriented assessment of analog and mixed-signal circuits in emerging high-k and multi-gate CMOS technologies. Coverage includes transient threshold voltage variations and integration of tunnel transistors in a multi-gage process.

Автор: Koichiro Ishibashi; Kenichi Osada
Название: Low Power and Reliable SRAM Memory Cell and Array Design
ISBN: 3642270182 ISBN-13(EAN): 9783642270185
Издательство: Springer
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Цена: 104480.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The recent development of advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses issues in the design of SRAM memory cells for advanced CMOS technology, including variability, leakage and reliability.