Low-Dimensional Structures in Semiconductors, A.R. Peaker; H.G. Grimmeiss
Автор: Steven P. Beaumont; Clivia M. Sotomayor Torres Название: Science and Engineering of One- and Zero-Dimensional Semiconductors ISBN: 1468457357 ISBN-13(EAN): 9781468457353 Издательство: Springer Рейтинг: Цена: 46570.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: Proceedings of a NATO ARW, held in Cadiz, Spain, March 29-April 1, 1989
Автор: B. Bensahel; Leigh T. Canham; Stephano Ossicini Название: Optical Properties of Low Dimensional Silicon Structures ISBN: 0792324463 ISBN-13(EAN): 9780792324461 Издательство: Springer Рейтинг: Цена: 203110.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: Describes the luminescent properties of porous silicon. This book presents the dramatic results of the major international laboratories and groups working in this subject. It demonstrates that a consensus is emerging on the origin of the visible luminescence of highly porous Si.
Автор: J.M. Chamberlain; L. Eaves; J.C. Portal Название: Electronic Properties of Multilayers and Low-Dimensional Semiconductor Structures ISBN: 1468474146 ISBN-13(EAN): 9781468474145 Издательство: Springer Рейтинг: Цена: 46570.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: Proceedings of a NATO ASI held at Chateau de Bonas, France, September 11-22, 1989
Автор: Paul N. Butcher; Norman H. March; Mario P. Tosi Название: Physics of Low-Dimensional Semiconductor Structures ISBN: 1489924175 ISBN-13(EAN): 9781489924179 Издательство: Springer Рейтинг: Цена: 186330.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: Presenting the latest advances in artificial structures, this volume discusses in-depth the structure and electron transport mechanisms of quantum wells, superlattices, quantum wires, and quantum dots.
Автор: Stephen J. Pearton; H.-J. Queisser; James W. Corbe Название: Hydrogen in Crystalline Semiconductors ISBN: 3540554912 ISBN-13(EAN): 9783540554912 Издательство: Springer Рейтинг: Цена: 87070.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: Provides a detailed treatment of the properties of hydrogen in crystalline semiconductors, emphasizing the ways in which hydrogen is incorporated during crystal growth and device fabrication. Covering the properties of hydrogen as an impurity, the monograph is intended to be of use to researchers.
Автор: Otfried Madelung Название: Semiconductors ISBN: 3540531505 ISBN-13(EAN): 9783540531500 Издательство: Springer Рейтинг: Цена: 87070.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: The frequent use of well known critical data handbooks like Beilstein, Gmelin and Landolt- Bornstein is impeded by the fact that merely larger libraries - often far away from the scientist`s working place - can afford such precious collections.
Автор: Solomon M. Ryvkin Название: Photoelectric Effects In Semiconductors / Foto?lektricheskie Yavlena V Poluprovodnikakh / ????????????????? ??????? ? ????????????? ISBN: 146841559X ISBN-13(EAN): 9781468415599 Издательство: Springer Рейтинг: Цена: 87070.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: Investigations of photoelectric effects occupy an important place in studies of semiconductors. In other words the study of steady-state photoconductiv- ity is being replaced by the study of photoconductivity kinetics.
Автор: H.P. Hughes; H. Starnberg Название: Electron Spectroscopies Applied to Low-Dimensional Structures ISBN: 1402003587 ISBN-13(EAN): 9781402003585 Издательство: Springer Рейтинг: Цена: 259950.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: The effect of reduced dimensionality, inherent at the crystallographic level, on the electronic properties of low dimensional materials can be dramatic, leading to structural and electronic instabilities-including supercond- tivity at high temperatures, charge density waves, and localisation-which continue to attract widespread interest.
Автор: Paul N. Butcher; Norman H. March; Mario P. Tosi Название: Physics of Low-Dimensional Semiconductor Structures ISBN: 0306441705 ISBN-13(EAN): 9780306441707 Издательство: Springer Рейтинг: Цена: 259950.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: Presenting advances in artificial structures, this volume discusses the structure and electron transport mechanisms of quantum wells, superlattices, quantum wires, and quantum dots. It is intended as a reference and review for researchers and graduate students in solid-state physics, materials science, and electrical and electronic engineering.
Автор: Marco Fanciulli Название: Electron Spin Resonance and Related Phenomena in Low-Dimensional Structures ISBN: 3642260136 ISBN-13(EAN): 9783642260131 Издательство: Springer Рейтинг: Цена: 139750.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: Here is a discussion of the state of the art of spin resonance in low dimensional structures, such as two-dimensional electron systems, quantum wires, and quantum dots. Leading scientists report on recent advances and discuss open issues and perspectives.
Автор: Lawrence Challis Название: Electron-phonon interactions in low-dimensional structures ISBN: 0198507321 ISBN-13(EAN): 9780198507321 Издательство: Oxford Academ Рейтинг: Цена: 155760.00 T Наличие на складе: Невозможна поставка. Описание: The book describes how the electrons in small "low-dimensional" structures interact with their surroundings. It contains a series of linked up to date review chapters as well as explanatory material and is written to be understandable to graduate students and newcomers to the field. All contributions come from leading scientists.
Автор: J. Chikawa; K. Sumino; K. Wada Название: Defects and Properties of Semiconductors ISBN: 9401086168 ISBN-13(EAN): 9789401086165 Издательство: Springer Рейтинг: Цена: 81050.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: Defect study in semiconductor engineering started originally with seeking methods how to suppress generation of harmful defects during device processing in order to achieve a high yield of device fabrication.
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