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Optical Properties of III–V Semiconductors, Heinz Kalt


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Автор: Heinz Kalt
Название:  Optical Properties of III–V Semiconductors
ISBN: 9783540602293
Издательство: Springer
Классификация:

ISBN-10: 3540602291
Обложка/Формат: Hardcover
Страницы: 199
Вес: 0.48 кг.
Дата издания: 12.12.1995
Серия: Springer Series in Solid-State Sciences
Язык: English
Размер: 240 x 163 x 19
Основная тема: Physics
Подзаголовок: The Influence of Multi-Valley Band Structures
Ссылка на Издательство: Link
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Поставляется из: Германии
Описание: A monograph that is concerned with the III-V bulk and low-dimensional semiconductors, with the emphasis on the implications of multi-valley band structures for the physical mechanisms essential for opto-electronic devices.

Quantum theory of the optical and electronic properties of semiconductors

Автор: Hartmut, Haug Koch, Stephan W.
Название: Quantum theory of the optical and electronic properties of semiconductors
ISBN: 9812838848 ISBN-13(EAN): 9789812838841
Издательство: World Scientific Publishing
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Цена: 47520.00 T
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Описание: Presents the basic elements to understand and research into semiconductor physics. This work deals with elementary excitations in bulk and low-dimensional semiconductors, including quantum wells, quantum wires and quantum dots. It covers fundamentals of optical bistability, semiconductor lasers, femtosecond excitation and the optical Stark effect.

Optical Properties of Semiconductors

Автор: G. Martinez
Название: Optical Properties of Semiconductors
ISBN: 0792320581 ISBN-13(EAN): 9780792320586
Издательство: Springer
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Цена: 256220.00 T
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Описание: Presents a review of the different aspects and concepts related to the optical properties of semiconductors. This title bridges the dielectric constant concept and the more the experimental investigations. It reviews the optical response function to time-resolved, high energy, and Raman spectroscopies.

Electronic Structure and Optical Properties of Semiconductors

Автор: Marvin L. Cohen; James R. Chelikowsky
Название: Electronic Structure and Optical Properties of Semiconductors
ISBN: 3540513914 ISBN-13(EAN): 9783540513919
Издательство: Springer
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Цена: 60940.00 T
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Описание: We began planning and writing this book in thc late 1970$ at thc ugge s stion of Manuel Cardona and Helmut Latsch. We also received considerable eo- couragement and stimulation from colleagues. Same said there was a need for instructional material in tbis area while others emphasized thc utility of a research text. We tried to strike a compromise. Thc figures, tables, and rcferences are included to enable researchcrs to obt81o quickly essential information in this area of semiconductor research. For instructoTS and stu- dents, we attempt to cover same basic ideas abaut electronic structure and semiconductor physics with applications to real, rather than model, solids. Ve \Vish to thank our colleagues and collaborators whose research rc- sults and ideas are presented here. Special thanks are duc to Jim Phillips who illfluellced lIS hoth during ollr formative )'ears and afterwards. We are grateful to Sari Yamagishi for her patience and skill with the typing and production of the manuscript. Finally, we acknowledge the great patience of Helmut Lotsch and Manucl Cardona. llerkeley, CA M.L. Gehen - inncapolis, MN, J.R, Chelikew"ky March 1988 VII Contents 1. Introduction 1 2. Theoretical Concepts and Methods .................... . 4 2.1 Thc One-Electron Model and Band Structure 7 2.2 Properties cf En(k) ......................... . 11 3. Pseudopotentials 16 3.1 The Empirical Pseudopotential Method .......... 20 3.2 Self-Consistent and Ab Initio Pseudopotentials ...... ..... 25 4. Response Functiolls and Density of States . ..

Physics and Properties of Narrow Gap Semiconductors

Автор: Junhao Chu; Arden Sher
Название: Physics and Properties of Narrow Gap Semiconductors
ISBN: 1441925686 ISBN-13(EAN): 9781441925688
Издательство: Springer
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Цена: 156720.00 T
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Описание: Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. This book offers clear descriptions of crystal growth and the fundamental structure and properties of these unique materials.

Electronic Properties of Doped Semiconductors

Автор: S. Luryi; B.I. Shklovskii; A.L. Efros
Название: Electronic Properties of Doped Semiconductors
ISBN: 3662024055 ISBN-13(EAN): 9783662024058
Издательство: Springer
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Цена: 83850.00 T
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Описание: First-generation semiconductors could not be properly termed "doped- they were simply very impure. In the last fifteen years, however, there has been a noticeable shift towards impure semiconductors - a shift which came about because it is precisely the impurities that are essential to a number of major semiconductor devices.

Nano-photonics in III-V Semiconductors for Integrated Quantum Optical Circuits

Автор: Nicholas Andrew Wasley
Название: Nano-photonics in III-V Semiconductors for Integrated Quantum Optical Circuits
ISBN: 3319015133 ISBN-13(EAN): 9783319015132
Издательство: Springer
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Цена: 104480.00 T
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Описание: This thesis breaks new ground in the physics of photonic circuits for quantum optical applications, offering the first demonstration of a spin-photon interface using an all-waveguide geometry, and a number of other highly novel contributions to the field.

Nano-photonics in III-V Semiconductors for Integrated Quantum Optical Circuits

Автор: Nicholas Andrew Wasley
Название: Nano-photonics in III-V Semiconductors for Integrated Quantum Optical Circuits
ISBN: 3319348833 ISBN-13(EAN): 9783319348834
Издательство: Springer
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Цена: 87060.00 T
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Описание: This thesis breaks new ground in the physics of photonic circuits for quantum optical applications, offering the first demonstration of a spin-photon interface using an all-waveguide geometry, and a number of other highly novel contributions to the field.

Defects and Properties of Semiconductors

Автор: J. Chikawa; K. Sumino; K. Wada
Название: Defects and Properties of Semiconductors
ISBN: 9401086168 ISBN-13(EAN): 9789401086165
Издательство: Springer
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Цена: 81050.00 T
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Описание: Defect study in semiconductor engineering started originally with seeking methods how to suppress generation of harmful defects during device processing in order to achieve a high yield of device fabrication.

Properties of Impurity States in Superlattice Semiconductors

Автор: C.Y. Fong; Inder P. Batra; S. Ciraci
Название: Properties of Impurity States in Superlattice Semiconductors
ISBN: 1468455559 ISBN-13(EAN): 9781468455557
Издательство: Springer
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Цена: 46570.00 T
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Описание: A NATO workshop on "The Properties of Impurity States in Semiconductor Superlattices" was held at the University of Essex, Colchester, United Kingdom, from September 7 to 11, 1987. Doped semiconductor superlattices not only provide a unique opportunity for studying low dimensional electronic behavior, they can also be custom-designed to exhibit many other fascinating el ctronic properties. The possibility of using these materials for new and novel devices has further induced many astonishing advances, especially in recent years. The purpose of this workshop was to review both advances in the state of the art and recent results in various areas of semiconductor superlattice research, including: (i) growth and characterization techniques, (ii) deep and shallow im- purity states, (iii) quantum well states, and (iv) two-dimensional conduction and other novel electronic properties. This volume consists of all the papers presented at the workshop. Chapters 1-6 are concerned with growth and characterization techniques for superlattice semiconductors. The question of a-layer is also discussed in this section. Chapters 7-15 contain a discussion of various aspects of the impurity states. Chapters 16- 22 are devoted to quantum well states. Finally, two-dimensional conduction and other electronic properties are described in chapters 23-26.

Photoelectric Properties and Applications of Low-Mobility Semiconductors

Автор: Rolf K?nenkamp
Название: Photoelectric Properties and Applications of Low-Mobility Semiconductors
ISBN: 3662156695 ISBN-13(EAN): 9783662156698
Издательство: Springer
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Цена: 46570.00 T
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Описание: This volume discusses the photoelectric behavior of three semiconducting thin film materials hydrogenated amorphous silicon (a Si:H), nano porous titanium dioxide, and the fullerene C60.

Processing and Properties of Compound Semiconductors,73

Автор: Robert K. Willardson
Название: Processing and Properties of Compound Semiconductors,73
ISBN: 0127521828 ISBN-13(EAN): 9780127521824
Издательство: Elsevier Science
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Цена: 211240.00 T
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Coherent Optical Interactions in Semiconductors

Автор: R.T. Phillips
Название: Coherent Optical Interactions in Semiconductors
ISBN: 0306447371 ISBN-13(EAN): 9780306447372
Издательство: Springer
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Цена: 204040.00 T
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Описание: Proceedings of a NATO ARW held in Cambridge, United Kingdom, August 11-14, 1993


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