The Non-Equilibrium Green`s Function Method for Nanoscale Device Simulation, Mahdi Pourfath
Автор: Ashok K. Vaseashta; Ion N. Mihailescu Название: Functionalized Nanoscale Materials, Devices and Systems ISBN: 1402089023 ISBN-13(EAN): 9781402089022 Издательство: Springer Рейтинг: Цена: 130430.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: Describes the underlying principles, synthesis routes, characterizations, applications of Nanoscale materials. This book discusses several top-down (attrition) and bottoms-up (self-assembly) approaches to prepare nanomaterials. It is suitable for those considering careers in the field of nanostructured materials and nanotechnology.
Автор: Jo?o P. Oliveira; Jo?o Goes Название: Parametric Analog Signal Amplification Applied to Nanoscale CMOS Technologies ISBN: 148999873X ISBN-13(EAN): 9781489998736 Издательство: Springer Рейтинг: Цена: 104480.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This book analyzes parametric amplification with emphasis on the MOS discrete-time implementation. Examples include a small gain amplifier, discrete-time mixer/IIR-Filter, and analog-to-digital converter. Offers experimental data validating the overall design.
Автор: Dufrene, Yves Название: Life at the Nanoscale: Atomic Force Microscopy of Live Cells ISBN: 9814267961 ISBN-13(EAN): 9789814267960 Издательство: Taylor&Francis Рейтинг: Цена: 117390.00 T Наличие на складе: Невозможна поставка. Описание: Proceeding from basic fundamentals to applications, this volume provides a comprehensive overview of the use of AFM and related scanning probe microscopies for cell surface analysis. It covers all cell types, from viruses and protoplasts to bacteria and animal cells.
Автор: Tiwari, Sandip Название: Nanoscale Device Physics ISBN: 0198759878 ISBN-13(EAN): 9780198759874 Издательство: Oxford Academ Рейтинг: Цена: 68640.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: The primary advanced textbook for the teaching of science and engineering of nanoscale devices as used in the semiconductor, electronics, magnetics, optics and electromechanics industry.
Автор: Terry L. Alford; L.C. Feldman; James W. Mayer Название: Fundamentals of Nanoscale Film Analysis ISBN: 1441939806 ISBN-13(EAN): 9781441939807 Издательство: Springer Рейтинг: Цена: 73990.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание:
Modern science and technology, from materials science to integrated circuit development, is directed toward the nanoscale. From thin films to field effect transistors, the emphasis is on reducing dimensions from the micro to the nanoscale. Fundamentals of NanoscaleFilm Analysis concentrates on analysis of the structure and composition of the surface and the outer few tens to hundred nanometers in depth. It describes characterization techniques to quantify the structure, composition and depth distribution of materials with the use of energetic particles and photons.
The book describes the fundamentals of materials characterization from the standpoint of the incident photons or particles which interrogate nanoscale structures. These induced reactions lead to the emission of a variety of detected of particles and photons. It is the energy and intensity of the detected beams that is the basis of the characterization of the materials. The array of experimental techniques used in nanoscale materials analysis covers a wide range of incident particle and detected beam interactions.
Included are such important interactions as atomic collisions, Rutherford backscattering, ion channeling, diffraction, photon absorption, radiative and nonradiative transitions, and nuclear reactions. A variety of analytical and scanning probe microscopy techniques are presented in detail.
Автор: Mark Lundstrom; Jing Guo Название: Nanoscale Transistors ISBN: 1441939156 ISBN-13(EAN): 9781441939159 Издательство: Springer Рейтинг: Цена: 113180.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: To push MOSFETs to their scaling limits and to explore devices that may complement or even replace them at molecular scale, a clear understanding of device physics at nanometer scale is necessary.
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