Analysis and Design of MOSFETs, Juin Jei Liou; Adelmo Ortiz-Conde; Francisco Garci

Автор: Wilfried H?nsch
Название: The Drift Diffusion Equation and Its Applications in MOSFET Modeling
ISBN: 3709190975 ISBN-13(EAN): 9783709190975
Издательство: Springer
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Цена: 95770.00 T
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Описание: To be perfect does not mean that there is nothing to add, but rather there is nothing to take away Antoine de Saint-Exupery The drift-diffusion approximation has served for more than two decades as the cornerstone for the numerical simulation of semiconductor devices.

Автор: Koeppl
Название: Design and Analysis of Bio-molecular Circuits
ISBN: 1441967656 ISBN-13(EAN): 9781441967657
Издательство: Springer
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Цена: 174150.00 T
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Описание: The book deals with engineering aspects of the two emerging and intertwined fields of synthetic and systems biology. Both fields hold promise to revolutionize the way molecular biology research is done, the way today’s drug discovery works and the way bio-engineering is done. Both fields stress the importance of building and characterizing small bio-molecular networks in order to synthesize incrementally and understand large complex networks inside living cells. Reminiscent of computer-aided design (CAD) of electronic circuits, abstraction is believed to be the key concept to achieve this goal. It allows hiding the overwhelming complexity of cellular processes by encapsulating network parts into abstract modules. This book provides a unique perspective on how concepts and methods from CAD of electronic circuits can be leveraged to overcome complexity barrier perceived in synthetic and systems biology.

Автор: Serge Oktyabrsky; Peide Ye
Название: Fundamentals of III-V Semiconductor MOSFETs
ISBN: 144191546X ISBN-13(EAN): 9781441915467
Издательство: Springer
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Цена: 174150.00 T
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Описание: Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits.

Автор: Jacopo Franco; Ben Kaczer; Guido Groeseneken
Название: Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications
ISBN: 9400776624 ISBN-13(EAN): 9789400776623
Издательство: Springer
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Цена: 111790.00 T
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Описание: This book explores the reliability of novel (Si)Ge channel quantum well pMOSFET technology. It proposes a physical model to understand the intrinsically superior reliability of the MOS system consisting of a Ge-based channel and a SiO2/HfO2 dielectric stack.

Автор: Viranjay M. Srivastava; Ghanshyam Singh
Название: MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch
ISBN: 3319011642 ISBN-13(EAN): 9783319011646
Издательство: Springer
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Цена: 111790.00 T
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Описание: This book provides analysis and discusses the design of various MOSFET technologies. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters as well as testing of MOSFETs parameters using image acquisition.

Автор: A. H. Agajanian
Название: Mosfet Technologies
ISBN: 1468461222 ISBN-13(EAN): 9781468461220
Издательство: Springer
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Цена: 113190.00 T
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Описание: The metal-oxide-semiconductor field-effect transistor (MOSFET) was invented in 1960. There are two reasons for this huge interest in this subiect: (1) higher density of device per chip, (2) higher yields and lower costs. This book is a comprehensive bibliography of of over 4400 references of the world literature in MOSFET technologies.

Автор: Neamen Donald A
Название: Microelectronics Circuit Analysis and Design
ISBN: 007128947X ISBN-13(EAN): 9780071289474
Издательство: McGraw-Hill
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Цена: 65190.00 T
Наличие на складе: Невозможна поставка.
Описание: Microelectronics Circuit Analysis and Design is intended as a core text in electronics for undergraduate electrical and computer engineering students. The fourth edition continues to provide a foundation for analyzing and designing both analog and digital electronic circuits. The goal has always been to make this book very readable and student friendly.