Quantum Statistics of Charged Particle Systems, W.D. Kraeft; D. Kremp; W. Ebeling; G. R?pke

Автор: Currell F.J.
Название: The Physics of Multiply and Highly Charged Ions / Volume 1: Sources, Applications and Fundamental Processes
ISBN: 1402015658 ISBN-13(EAN): 9781402015656
Издательство: Springer
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Описание: It is arguable that most of chemistry and a large portion of atomic physics is concemed with the behaviour of the 92 naturally occurring elements in each of 3 charge states (+1, 0, -1);

Автор: Bharti, Bhuvnesh
Название: Adsorption, aggregation and structure formation in systems of charged particles
ISBN: 3319077368 ISBN-13(EAN): 9783319077369
Издательство: Springer
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Цена: 104480.00 T
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Описание: The interaction of globular proteins with silica nanoparticles is dominated by electrostatic interactions and can be controlled by pH and ionic strength, while the bridging of nanoparticles by adsorbed protein molecules leads to large-scale hybrid aggregates of protein with the nanoparticles.

Автор: William D. Brewer; Eugen Fick; G?nter Sauermann
Название: The Quantum Statistics of Dynamic Processes
ISBN: 3642837174 ISBN-13(EAN): 9783642837173
Издательство: Springer
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Цена: 65290.00 T
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Описание: The methods of statistical physics have become increasingly important in recent years for the treatment of a variety of diverse physical problems.

Автор: Evgeny Barkhudarov
Название: Renormalization Group Analysis of Equilibrium and Non-equilibrium Charged Systems
ISBN: 3319061534 ISBN-13(EAN): 9783319061535
Издательство: Springer
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Описание: The RG calculation reproduced established results, but in a more concise form, and showed the effect of the cut-offs on the Debye screening length.The main part of the thesis is the application of the dynamic RG to turbulence in magnetohydrodynamics.

Автор: Edmund G. Seebauer; Meredith C. Kratzer
Название: Charged Semiconductor Defects
ISBN: 1848820585 ISBN-13(EAN): 9781848820586
Издательство: Springer
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Цена: 174150.00 T
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Описание: Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of `defect engineering`. This book covers the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors.

Автор: Manuel Endres
Название: Probing Correlated Quantum Many-Body Systems at the Single-Particle Level
ISBN: 3319057529 ISBN-13(EAN): 9783319057521
Издательство: Springer
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Цена: 121110.00 T
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Описание: Introduction.- Part I Single-Site- and Single-Atom-Resolved Detection of Atomic Limit Mott Insulators.- Superfluid-Mott-Insulator Transition.- Overview of the Experimental Procedure.- Single-Site-Resolved Imaging and Thermometry of Atomic Limit Mott Insulators.- Part II Single-Site- and Single-Atom-Resolved Detection of Correlation Functions.- Detection of Particle-Hole Pairs Using Two-Site Correlation Functions.- Non-Local Correlations in One Dimension.- Non-Local Correlations in Two Dimensions, Duality and Distribution Functions.- Part III 'Higgs' Amplitude Mode.- Introduction to Amplitude and Phase Modes.- Detection of the Higgs Amplitude Mode at the 2d SF-Mott-Insulator Transition.- Outlook.- Part IV Appendix.- Appendix A Experimental Details.- Appendix B Numerical Methods for Correlation Functions.- Appendix C Calculation for Non-Local Correlations in One Dimension.- Appendix D Calculation for Non-Local Correlations in Two Dimensions.

Автор: Edmund G. Seebauer; Meredith C. Kratzer
Название: Charged Semiconductor Defects
ISBN: 1849968209 ISBN-13(EAN): 9781849968201
Издательство: Springer
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Цена: 174130.00 T
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Описание: "Charged Defects in Semiconductors" details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors.