Semiconductor interfaces: formation and properties,
Автор: Aleksey Andreev Название: Theory of Semiconductor Quantum Dots ISBN: 9812568816 ISBN-13(EAN): 9789812568816 Издательство: World Scientific Publishing Рейтинг: Цена: 153120.00 T Наличие на складе: Невозможна поставка. Описание: Semiconductor structures containing zero-dimensional objects — quantum dots — are the subject of intensive research worldwide. This monograph describes a detailed theory of the electronic band structure and optical properties of semiconductor quantum dots.The author provides a comprehensive description of an original approach based on a combination of the Fourier transform, the Green's function and plane-wave expansion techniques in the framework of multiband 8x8 kp theory. The calculated band structure, optical properties and device applications are analyzed in line with available experiments for a large number of realistic quantum dot structures and various combinations of materials, such as InGaN, GaN/AlN, ZnSe, InGaAs (including dots-in-the-well), ZnSe/CdSe, and lead salts.
Автор: Adachi Название: Properties of Semiconductor Alloys: Group-IV, III-V and II-VI Semiconductors ISBN: 0470743697 ISBN-13(EAN): 9780470743690 Издательство: Wiley Рейтинг: Цена: 190030.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: The main purpose of this book is to provide a comprehensive treatment of the materials aspects of group-IV, III-V and II-VI semiconductor alloys used in various electronic and optoelectronic devices.
This work investigates the energy-level alignment of hybrid inorganic/organic systems (HIOS) comprising ZnO as the major inorganic semiconductor. In addition to offering essential insights, the thesis demonstrates HIOS energy-level alignment tuning within an unprecedented energy range. (Sub)monolayers of organic molecular donors and acceptors are introduced as an interlayer to modify HIOS interface-energy levels. By studying numerous HIOS with varying properties, the author derives generally valid systematic insights into the fundamental processes at work. In addition to molecular pinning levels, he identifies adsorption-induced band bending and gap-state density of states as playing a crucial role in the interlayer-modified energy-level alignment, thus laying the foundation for rationally controlling HIOS interface electronic properties. The thesis also presents quantitative descriptions of many aspects of the processes, opening the door for innovative HIOS interfaces and for future applications of ZnO in electronic devices.
Автор: Inder P. Batra Название: Metallization and Metal-Semiconductor Interfaces ISBN: 1461280869 ISBN-13(EAN): 9781461280866 Издательство: Springer Рейтинг: Цена: 113190.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: Proceedings of a NATO ARW held at the Technical University of Munich, Garching, Germany, August 22-26, 1988
Автор: Carl Wilmsen Название: Physics and Chemistry of III-V Compound Semiconductor Interfaces ISBN: 1468448374 ISBN-13(EAN): 9781468448375 Издательство: Springer Рейтинг: Цена: 87070.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: In this way, the book serves as both an insightful treatise on III-V interfaces and a handy reference to the literature.
Автор: Ulrike Woggon Название: Optical Properties of Semiconductor Quantum Dots ISBN: 3662148129 ISBN-13(EAN): 9783662148129 Издательство: Springer Рейтинг: Цена: 95770.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: After providing the reader with a theoretical background, the author illustrates the specific properties of three-dimensionally confined semiconductors, such as the size dependence of energy states, optical transitions, and dephasing mechanisms with the results from numerous experiments in linear and nonlinear spectroscopy.
Автор: Eckehard Sch?ll Название: Theory of Transport Properties of Semiconductor Nanostructures ISBN: 1461376610 ISBN-13(EAN): 9781461376613 Издательство: Springer Рейтинг: Цена: 174150.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: Hydrodynamic moment equations (Chapter 2), Monte Carlo techniques (Chapter 3) and the cellular au- tomaton approach (Chapter 4) are introduced and illustrated with applications to nanometre structures and device simulation.
Автор: Vladimir Privman; Nenad M. Svrakic Название: Directed Models of Polymers, Interfaces, and Clusters: Scaling and Finite-Size Properties ISBN: 3662137178 ISBN-13(EAN): 9783662137178 Издательство: Springer Рейтинг: Цена: 78350.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This monograph gives a detailed introductory exposition of research results for various models, mostly two-dimensional, of directed walks, interfaces, wetting, surface adsorption (of polymers), stacks, compact clusters (lattice animals), etc.
Автор: Christian Rockenh?user Название: Electron Microscopical Investigation of Interdiffusion and Phase Formation at Gd2O3/CeO2- and Sm2O3/CeO2-Interfaces ISBN: 3658087927 ISBN-13(EAN): 9783658087920 Издательство: Springer Рейтинг: Цена: 60940.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: Christian Rockenhauser adresses phase formation and cation interdiffusion of the GdxCe1-xO2-x/2-and SmxCe1-xO2-x/2-material systems at temperatures ranging from 970 to 1270 DegreesC.
Автор: Wai Kin Chim Название: Semiconductor Device and Failure Analysis : Using Photon Emission Microscopy ISBN: 047149240X ISBN-13(EAN): 9780471492405 Издательство: Wiley Рейтинг: Цена: 204810.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: Fault detection has become increasingly difficult as integrated circuits become more and more complex. Photon Emission Microscopy (PEM) is a physical failure analysis technique which locates and identifies faults in integrated circuits.
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