Theory of Semiconductor Quantum Dots, Aleksey Andreev
Автор: Tritt Terry M. Название: Thermal Conductivity / Theory, Properties, and Applications ISBN: 0306483270 ISBN-13(EAN): 9780306483271 Издательство: Springer Рейтинг: Цена: 204970.00 T Наличие на складе: Невозможна поставка. Описание: It has been almost thirty years since the publication of a book that is entirely dedicated to the theory, description, characterization and measurement of the thermal conductivity of solids. The recent discovery of new materials which possess more complex crystal structures and thus more complicated phonon scattering mechanisms have brought innovative challenges to the theory and experimental understanding of these new materials. With the development of new and novel solid materials and new measurement techniques, this book will serve as a current and extensive resource to the next generation researchers in the field of thermal conductivity. This book is a valuable resource for research groups and special topics courses (8-10 students), for 1st or 2nd year graduate level courses in Thermal Properties of Solids, special topics courses in Thermal Conductivity, Superconductors and Magnetic Materials, and to researchers in Thermoelectrics, Thermal Barrier Materials and Solid State Physics.
Автор: Harrison Paul Название: Quantum Wells, Wires and Dots ISBN: 1118923367 ISBN-13(EAN): 9781118923368 Издательство: Wiley Рейтинг: Цена: 59080.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: Quantum Wells, Wires and Dots provides all the essential information, both theoretical and computational, to develop an understanding of the electronic, optical and transport properties of these semiconductor nanostructures.
Автор: Masumoto, Takagahara Название: Semiconductor quantum dots ISBN: 3642076750 ISBN-13(EAN): 9783642076756 Издательство: Springer Рейтинг: Цена: 278580.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: Semiconductor quantum dots represent one of the fields of solid state physics that have experienced the greatest progress in the last decade. This book surveys this progress in the physics, optical spectroscopy and application-oriented research of semiconductor quantum dots.
This thesis examines the unique properties of gallium arsenide (GaAs)-based quantum-dot semiconductor optical amplifiers for optical communication networks, introducing readers to their fundamentals, basic parameters and manifold applications. The static and dynamic properties of these amplifiers are discussed extensively in comparison to conventional, non quantum-dot based amplifiers, and their unique advantages are elaborated on, such as the fast carrier dynamics and the decoupling of gain and phase dynamics.
In addition to diverse amplification scenarios involving single and multiple high symbol rate amplitude and phase-coded data signals, wide-range wavelength conversion as a key functionality for optical signal processing is investigated and discussed in detail. Furthermore, two novel device concepts are developed and demonstrated that have the potential to significantly simplify network architectures, reducing the investment and maintenance costs as well as the energy consumption of future networks.
Автор: Consonni Vincent Название: Wide band gap semiconductor nanowires 2 ISBN: 1848216874 ISBN-13(EAN): 9781848216877 Издательство: Wiley Рейтинг: Цена: 146730.00 T Наличие на складе: Поставка под заказ. Описание:
This book, the second of two volumes, describes heterostructures and optoelectronic devices made from GaN and ZnO nanowires.
Over the last decade, the number of publications on GaN and ZnO nanowires has grown exponentially, in particular for their potential optical applications in LEDs, lasers, UV detectors or solar cells. So far, such applications are still in their infancy, which we analyze as being mostly due to a lack of understanding and control of the growth of nanowires and related heterostructures. Furthermore, dealing with two different but related semiconductors such as ZnO and GaN, but also with different chemical and physical synthesis methods, will bring valuable comparisons in order to gain a general approach for the growth of wide band gap nanowires applied to optical devices.
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