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Ferroelectricity in Doped Hafnium Oxide, Edited by Uwe Schroeder, Deputy Scientific Directo


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Автор: Edited by Uwe Schroeder, Deputy Scientific Directo
Название:  Ferroelectricity in Doped Hafnium Oxide
ISBN: 9780443291821
Издательство: Elsevier Science
Классификация:


ISBN-10: 0443291829
Обложка/Формат: Paperback
Страницы: 850
Вес: 0.00 кг.
Дата издания: 01.08.2025
Серия: Woodhead Publishing Series in Electronic and Optical Materials
Издание: 2 ed
Размер: 229 x 152
Подзаголовок: Materials, Properties and Devices
Рейтинг:
Поставляется из: Европейский союз
Описание: Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices, Second Edition covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are extensively discussed, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HfO2 and standard ferroelectric materials. Finally, HfO2-based devices are summarized.The new edition extends the first edition in the following areas: Detailed discussion of the causes and dependencies for ferroelectric properties; Broader coverage of all known deposition techniques; Comparison of ferroelectric with antiferroelectric, piezoelectric, and pyroelectric properties; More aspects on switching and field cycling behavior; Wider overview of simulation results; Further applications of new HfO2-based materials for energy storage, and pyroelectric, piezoelectric, and neuromorphic applications.
Дополнительное описание: Explores all aspects of the structural and electrical properties of HfO2, including processes, modeling, and implementation into semiconductor devicesConsiders potential applications, including FeCaps, FeFETs, FTJs, energy storage, pyroelectric, piezoelec


      Старое издание
Ferroelectricity in Doped Hafnium Oxide

Автор: Schroeder, Uwe
Название: Ferroelectricity in Doped Hafnium Oxide
ISBN: 0081024304 ISBN-13(EAN): 9780081024300
Издательство: Elsevier Science
Цена: 185270 T
Описание:

Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more.

Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized.

  • Explores all aspects of the structural and electrical properties of HfO2, including processes, modelling and implementation into semiconductor devices
  • Considers potential applications including FeCaps, FeFETs, NCFETs, FTJs and more
  • Provides comparison of an emerging ferroelectric material to conventional ferroelectric materials with insights to the problems of downscaling that conventional ferroelectrics face


Ferroelectricity in Doped Hafnium Oxide

Автор: Schroeder, Uwe
Название: Ferroelectricity in Doped Hafnium Oxide
ISBN: 0081024304 ISBN-13(EAN): 9780081024300
Издательство: Elsevier Science
Рейтинг:
Цена: 185270.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:

Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more.

Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized.

  • Explores all aspects of the structural and electrical properties of HfO2, including processes, modelling and implementation into semiconductor devices
  • Considers potential applications including FeCaps, FeFETs, NCFETs, FTJs and more
  • Provides comparison of an emerging ferroelectric material to conventional ferroelectric materials with insights to the problems of downscaling that conventional ferroelectrics face

Ferroelectricity at the Nanoscale

Автор: Vladimir Fridkin; Stephen Ducharme
Название: Ferroelectricity at the Nanoscale
ISBN: 3642410065 ISBN-13(EAN): 9783642410062
Издательство: Springer
Рейтинг:
Цена: 121890.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book examines a wide range of ferroelectric materials. It explains the theoretical background of ultrathin ferroelectric films, presents applications of ferroelectric materials, and displays the mechanism of switching of nanosized ferroelectric films.

Microwave Dielectric Spectroscopy of Ferroelectrics and Related Materials

Автор: Grigas
Название: Microwave Dielectric Spectroscopy of Ferroelectrics and Related Materials
ISBN: 2884491902 ISBN-13(EAN): 9782884491907
Издательство: Taylor&Francis
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Цена: 234790.00 T
Наличие на складе: Нет в наличии.

100 Years of Ferroelectricity 1921-2021

Автор: Julio a Gonzalo, Gines Lifante, Francisco Jaque
Название: 100 Years of Ferroelectricity 1921-2021
ISBN: 9811243093 ISBN-13(EAN): 9789811243097
Издательство: World Scientific Publishing
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Цена: 142690.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:

Since the discovery in 1921 of ferroelectric properties in Rochelle salt by Valasek, no new ferroelectric material was found until Busch and Scherrer in Switzerland in 1935 discovered ferroelectricity in Potassium dihydrogen phosphate (KDP). However, during the Second World War, researchers in the US in 1943 discovered ferroelectric materials such as BaTiO3 having ferroelectric properties well above room temperature, that led to an explosion of research after the war in Western and Central Europe, Russia, and Japan, because of their promising and potential applications.


This book gives an overview of relevant experimental and theoretical work in ferroelectricity. It is organized into three Sections, corresponding to three time periods. The first (1921-1960) includes early work by Valasek, works by Busch and Scherrer, Mason and Mattias, Shirane and Takeda, ending with theoretical work by Cochran on crystal stability and the soft mode theory of ferroelectricity. The second one (1961-2002) includes a number of experimental and theoretical publications on ferroelectric materials and ferroelectric transitions. The number of international meetings began to increase, and the number of papers increased exponentially. New subfields at that time included ferroelectric liquid crystals, thin films, dipolar glasses and relaxors.


The last and final section (2002-2021) includes more recent publications on fundamental structural studies, neutron diffraction work on PZT, quantum tunneling and zero-point energy in ferroelectrics, investigations on the anomalous temperature dependence behavior of liquid water and other recent developments.


The book will be a useful compendium on ferroelectrics for materials scientists, and/or PhD graduate students on ferroelectrics all around the world.


Ferroelectricity at the Nanoscale

Автор: Vladimir Fridkin; Stephen Ducharme
Название: Ferroelectricity at the Nanoscale
ISBN: 3662509768 ISBN-13(EAN): 9783662509760
Издательство: Springer
Рейтинг:
Цена: 104480.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book examines a wide range of ferroelectric materials. It explains the theoretical background of ultrathin ferroelectric films, presents applications of ferroelectric materials, and displays the mechanism of switching of nanosized ferroelectric films.

Willemite-Based Glass Ceramic Doped by Different Percentage of Erbium Oxide and Sintered in Temperature of 500-1100C

Автор: Gholamreza Vahedi Sarrigani; Iraj Sadegh Amiri
Название: Willemite-Based Glass Ceramic Doped by Different Percentage of Erbium Oxide and Sintered in Temperature of 500-1100C
ISBN: 3030106438 ISBN-13(EAN): 9783030106430
Издательство: Springer
Рейтинг:
Цена: 46570.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book investigates the effect of sintering temperature on willemite based glass-ceramic doped with different content of Er2O3. It is the first to report research on producing willemite by using waste materials and using trivalent erbium (Er3+) as a dopant. This book provides a survey of the literature on glass and glass-ceramic, while comprehensive experiments and analysis have been performed on the material used.

Spectroscopy Of Lanthanide Doped Oxide Materials

Автор: Dhoble, Sanjay J.
Название: Spectroscopy Of Lanthanide Doped Oxide Materials
ISBN: 0081029357 ISBN-13(EAN): 9780081029350
Издательство: Elsevier Science
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Цена: 185270.00 T
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Описание:

Spectroscopy of Lanthanide Doped Oxide Materials provides a comprehensive overview on the most essential characterization techniques of these materials, along with their key applications. The book describes the application of optical spectroscopy of lanthanides doped inorganic phosphor hosts and gives information about their structure and morphology, binding energies, energy of transition and band gap. Also discussed are the properties and applications of rare earth doped inorganic materials and the barriers and potential solutions to enable the commercial realization of phosphors in important applications.

The book reviews key information for those entering the field of phosphor research, along with the fundamental knowledge of the properties of transition series elements under UV/Visible/NIR light exposer. Low-cost materials methods to synthesize the materials and spectroscopic characterization methods are also detailed.


Einstein`s Photoemission

Автор: Kamakhya Prasad Ghatak
Название: Einstein`s Photoemission
ISBN: 3319111876 ISBN-13(EAN): 9783319111872
Издательство: Springer
Рейтинг:
Цена: 139310.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Einstein`s Photoemission

Lanthanide-Doped Aluminate Phosphors

Автор: Yerpude, Atul (Assistant Professor, Department of Physics, N.H. Science College, Gondwana University Bramhapuri, India) Pawade, Vijay B. (Assistant Pr
Название: Lanthanide-Doped Aluminate Phosphors
ISBN: 0323905919 ISBN-13(EAN): 9780323905916
Издательство: Elsevier Science
Рейтинг:
Цена: 202120.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Featuring an easy-to-learn and easy-to-use reference system acclaimed for more than five generations, the Thompson Chain-Reference Bible enables you to search the breadth of Scripture`s teachings on thousands of topics. Ideal for personal study and sermon preparation, it`s now easier to read with the NKJV Comfort Print typeface.

Ab Initio Studies on Superconductivity in Alkali-Doped Fullerides

Автор: Nomura
Название: Ab Initio Studies on Superconductivity in Alkali-Doped Fullerides
ISBN: 9811014418 ISBN-13(EAN): 9789811014413
Издательство: Springer
Рейтинг:
Цена: 102480.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book covers high-transition temperature (Tc) s-wave superconductivity and the neighboring Mott insulating phase in alkali-doped fullerides. The author presents (1) a unified theoretical description of the phase diagram and (2) a nonempirical calculation of Tc. For these purposes, the author employs an extension of the DFT+DMFT (density-functional theory + dynamical mean-field theory). He constructs a realistic electron–phonon-coupled Hamiltonian with a newly formulated downfolding method. The Hamiltonian is analyzed by means of the extended DMFT. A notable aspect of the approach is that it requires only the crystal structure as a priori knowledge. Remarkably, the nonempirical calculation achieves for the first time a quantitative reproduction of the experimental phase diagram including the superconductivity and the Mott phase. The calculated Tc agrees well with the experimental data, with the difference within 10 K. The book provides details of the computational scheme, which can also be applied to other superconductors and other phonon-related topics. The author clearly describes a superconducting mechanism where the Coulomb and electron­–phonon interactions show an unusual cooperation in the superconductivity thanks to the Jahn–Teller nature of the phonons.

Rare-Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications

Автор: Kevin Peter O`Donnell; Volkmar Dierolf
Название: Rare-Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications
ISBN: 9401784728 ISBN-13(EAN): 9789401784726
Издательство: Springer
Рейтинг:
Цена: 148010.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book summarises recent progress in the science and technology of rare-earth doped nitrides, providing a snapshot of the field at a critical point in its development. It is the first book on rare-earth doped III-Nitrides and semiconductors.

Dispersion Relations in Heavily-Doped Nanostructures

Автор: Kamakhya Prasad Ghatak
Название: Dispersion Relations in Heavily-Doped Nanostructures
ISBN: 331920999X ISBN-13(EAN): 9783319209999
Издательство: Springer
Рейтинг:
Цена: 139310.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book presents the dispersion relation in heavily doped nano-structures. The influences of magnetic quantization, crossed electric and quantizing fields, intense electric fields on the on the dispersion relation in heavily doped semiconductors and super-lattices are also discussed.


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