Автор: Litvinov, Vladimir Название: Wide Bandgap Semiconductor Spintronics ISBN: 9814669709 ISBN-13(EAN): 9789814669702 Издательство: Taylor&Francis Цена: 112290 T Наличие на складе: Нет в наличии.
Автор: Thomas Schapers Название: Semiconductor Spintronics ISBN: 3110638878 ISBN-13(EAN): 9783110638875 Издательство: Walter de Gruyter Рейтинг: Цена: 89190.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание:
This revised and expanded edition of the first comprehensive introduction to the rapidly-evolving field of spintronics covers ferromagnetism in nano-electrodes, spin injection, spin manipulation, and the practical use of these effects in next-generation electronics. Moreover, the book now also includes spin-based optics, topological materials and insulators, and the quantum spin Hall effect.
Автор: Hao Название: Nitride Wide Bandgap Semiconductor ISBN: 1498745121 ISBN-13(EAN): 9781498745123 Издательство: Taylor&Francis Рейтинг: Цена: 178640.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs).
Автор: Suganuma, Katsuaki Название: Wide Bandgap Power Semiconductor Packaging ISBN: 0081020945 ISBN-13(EAN): 9780081020944 Издательство: Elsevier Science Рейтинг: Цена: 185270.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: Wide Bandgap Power Semiconductor Packaging: Materials, Components, and Reliability addresses the key challenges that WBG power semiconductors face during integration, including heat resistance, heat dissipation and thermal stress, noise reduction at high frequency and discrete components, and challenges in interfacing, metallization, plating, bonding and wiring. Experts on the topic present the latest research on materials, components and methods of reliability and evaluation for WBG power semiconductors and suggest solutions to pave the way for integration. As wide bandgap (WBG) power semiconductors, SiC and GaN, are the latest promising electric conversion devices because of their excellent features, such as high breakdown voltage, high frequency capability, and high heat-resistance beyond 200 C, this book is a timely resource on the topic.
Автор: Liao, Meiyong Название: Ultra-wide Bandgap Semiconductor Materials ISBN: 0128154683 ISBN-13(EAN): 9780128154687 Издательство: Elsevier Science Рейтинг: Цена: 206610.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание:
Ultra-wide Bandgap Semiconductors (UWBG) covers the most recent progress in UWBG materials, including sections on high-Al-content AlGaN, diamond, B-Ga2O3, and boron nitrides. The coverage of these materials is comprehensive, addressing materials growth, physics properties, doping, device design, fabrication and performance. The most relevant and important applications are covered, including power electronics, RF electronics and DUV optoelectronics. There is also a chapter on novel structures based on UWBG, such as the heterojunctions, the low-dimensional structures, and their devices. This book is ideal for materials scientists and engineers in academia and R&D searching for materials superior to silicon carbide and gallium nitride.
Provides a one-stop resource on the most promising ultra-wide bandgap semiconducting materials, including high-Al-content AlGaN, diamond, β-Ga2O3, boron nitrides, and low-dimensional materials
Presents comprehensive coverage, from materials growth and properties, to device design, fabrication and performance
Features the most relevant applications, including power electronics, RF electronics and DUV optoelectronics
Автор: Baliga, B. Jayant Название: Wide bandgap Semiconductor Power Devices ISBN: 0081023065 ISBN-13(EAN): 9780081023068 Издательство: Elsevier Science Рейтинг: Цена: 207730.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание:
Wide bandgap semiconductor power devices have been under investigation for more than 35 years. During the last 10 years, gallium nitride and silicon carbide power devices have become commercially available. There has been a flurry of activity around the world to exploit these devices for commercial applications.
Wide Bandgap Semiconductor Power Devices provides readers with a single resource to understand why these devices are superior to the existing silicon power devices. It lays the groundwork for understanding of the array of applications for these devices and the anticipated benefits in energy savings.
Founder of the Power Semiconductor Research Center at North Carolina State University and creator of the IGBT device, Dr. B. Jayant Baliga is one of the highest regarded experts in the field. In Wide bandgap Semiconductor Power Devices Dr. Baliga leads a team of experts to comprehensively review the materials, device physics, design considerations and most relevant applications for these devices.
Covers power electronic devices comprehensively including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications
Addresses the key challenges towards the realization of wide bandgap power electronic devices including materials defects and their role in performance and reliability
Provides benefits of wide bandgap semiconductors including opportunities for cost reduction and social impact
Автор: Thomas Schaepers Название: Semiconductor Spintronics ISBN: 3110361671 ISBN-13(EAN): 9783110361674 Издательство: Walter de Gruyter Цена: 74320.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: As the first comprehensive introduction into the rapidly evolving field of spintronics, this textbook covers ferromagnetism in nano-electrodes, spin injection, spin manipulation, and the practical use of these effects in next-generation electronics. Based on foundations in quantum mechanics and solid state physics this textbook guides the reader to the forefront of research and development in the field, based on repeated lectures given by the author. From the content:Low-dimensional semiconductor structuresMagnetism in solidsDiluted magnetic semiconductorsMagnetic electrodesSpin injectionSpin transistorSpin interferenceSpin Hall effectQuantum spin Hall effectTopological insulatorsQuantum computation with electron spins
Название: Spintronics handbook, second edition: spin transport and magnetism ISBN: 0367779706 ISBN-13(EAN): 9780367779702 Издательство: Taylor&Francis Рейтинг: Цена: 45930.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: The second edition offers an update on the single most comprehensive survey of the two intertwined fields of spintronics and magnetism, covering the diverse array of materials and structures, including silicon, organic semiconductors, carbon nanotubes, graphene, and engineered nanostructures.
Автор: Awschalom et al Название: Semiconductor spintronics and quantum computation ISBN: 3642075770 ISBN-13(EAN): 9783642075773 Издательство: Springer Рейтинг: Цена: 174130.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This field of semiconductor "spintronics" (spin transport electron- ics or spin-based electronics) places electron spin rather than charge at the very center of interest.
Автор: Xia Название: Semiconductor Spintronics ISBN: 9814327905 ISBN-13(EAN): 9789814327909 Издательство: World Scientific Publishing Рейтинг: Цена: 184800.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: Semiconductor Spintronics, as an emerging research discipline and an important advanced field in physics, has developed quickly and obtained fruitful results. This monograph summarizes the physical foundation and the experimental results obtained in this field.
Автор: Arnold S. Borukhovich; Alexey V. Troshin Название: Europium Monoxide ISBN: 3030095711 ISBN-13(EAN): 9783030095710 Издательство: Springer Рейтинг: Цена: 130430.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This book presents the physical characteristics and possible device applications of europium monoxide as well as materials based on it. It reveals the suitability of this material for device applications in super- and semiconductor spin electronics. Ferromagnetic semiconductors like europium monoxide have contributed to a fascinating research field in condensed matter physics. In the book are presented the electronic and magnetic properties and thermal and resonance parameters of this material, its peculiarities in external fields as a function of non-stoichiometry, doping level, both in single-crystal and thin-film states. Particular attention is paid to the possibility to use this monoxide or its solid solutions (composites) unconventionally for creating spin electronics structures which work at room temperature conditions. This book appeals to researchers, graduate students and professionals engaged in the development of semiconductor spin electronics and computer devices, technologists and theoretical physicists. It is important for the calculation, development and creation of spin memory devices for a quantum computer.
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