Group III-Nitride Semiconductor Optoelectronics, C. Jayant Praharaj

Автор: Tadjer, Marko
Название: Thermal Management Of Gallium Nitride Electronics
ISBN: 0128210842 ISBN-13(EAN): 9780128210840
Издательство: Elsevier Science
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Цена: 207730.00 T
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Описание: Blockchain technology has come a long way since the initial vision published by Satoshi Nakamoto in 2008. Big buzz words like "bitcoin," "blockchain," and "cryptocurrency" are everywhere. Companies and governments have started to use blockchain technology in earnest and will increasingly do so for the foreseeable future. This book takes an in-depth look at blockchain technology and how users can take advantage of its potential. Since its initial conception, blockchain has encompassed both a social promise and new technology. Originally proposed as a solution for Bitcoin`s cryptocurrency record-keeping system, blockchains are now used to store the records of all types of applications. Core services we all depend on like the transfer of money, voting, land records, IP rights, and identity all rely on intermediaries. Blockchain software has begun taking the place of these antiquated systems. The software becomes the trusted record-keeping system, and the rules programed into the software become the intermediaries. This book explains the fundamentals of blockchain technology and assumes that the reader has little to no knowledge of the subject. Topics are explained as simply as possible, while not obscuring details that may affect the reader. It also gives the reader insight into the critical differences in blockchain software and will provide them with a basic understanding of how and why these systems work. After reading this book, the reader will be able to speak with confidence on the topic, know key differences in technology. The reader will also have critical insight into blockchain software`s inherent limitations and shortcomings. This book is also the definitive guide to the Blockchain Technology Foundation (BTF) exam from EXIN. It will prepare the reader for the test, and each chapter ends with review questions for extra guidance in preparing for the exam.

Автор: Matsuoka
Название: Epitaxial Growth of III-Nitride Compounds
ISBN: 3319766406 ISBN-13(EAN): 9783319766409
Издательство: Springer
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Цена: 46570.00 T
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Описание: This book presents extensive information on the mechanisms of epitaxial growth in III-nitride compounds, drawing on a state-of-the-art computational approach that combines ab initio calculations, empirical interatomic potentials, and Monte Carlo simulations to do so.

Автор: Chu, Rongming
Название: Iii-Nitride Electronic Devices,102
ISBN: 0128175443 ISBN-13(EAN): 9780128175446
Издательство: Elsevier Science
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Цена: 185270.00 T
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Описание:

III-Nitride Electronic Devices, Volume 102, emphasizes two major technical areas advanced by this technology: radio frequency (RF) and power electronics applications. The range of topics covered by this book provides a basic understanding of materials, devices, circuits and applications while showing the future directions of this technology. Specific chapters cover Electronic properties of III-nitride materials and basics of III-nitride HEMT, Epitaxial growth of III-nitride electronic devices, III-nitride microwave power transistors, III-nitride millimeter wave transistors, III-nitride lateral transistor power switch, III-nitride vertical devices, Physics-Based Modeling, Thermal management in III-nitride HEMT, RF/Microwave applications of III-nitride transistor/wireless power transfer, and more.

Автор: Tae-Yeon Seong; Jung Han; Hiroshi Amano; Hadis Mor
Название: III-Nitride Based Light Emitting Diodes and Applications
ISBN: 9811099596 ISBN-13(EAN): 9789811099595
Издательство: Springer
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Цена: 214280.00 T
Наличие на складе: Поставка под заказ.
Описание: This book discusses LED production issues, including needed improvement in growth of high-quality nitride semiconductor epitaxial layers with a low density of dislocations, materials quality, efficiency droop, growth in different orientations and polarization.

Автор: Zhou
Название: III-Nitride LEDs
ISBN: 9811904383 ISBN-13(EAN): 9789811904387
Издательство: Springer
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Цена: 107130.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book highlights state-of-the-art in III-nitrides-based light-emitting diodes (LEDs). Motivated by the application prospects in lighting, high-resolution display, and health & medicine, the book systematically introduces the physical fundamentals, epitaxial growth, and device fabrications of III-nitride-based LEDs. Important topics including the structures of chips, device reliability and measurements and the advances in mini and micro LEDs are also discussed. The book is completed with a decade of research experience of the author’s team in the design and fabrication of III-nitrides-based LEDs, presenting the novel achievements in the stress control of the large mismatch heterostructures, defect formation and inhibition mechanism of the heteroepitaxial growth, LED epitaxial technologies, and the fabrication of high-efficient flip-chip LEDs. The book comprises of a valuable reference source for researchers and professionals engaged in the research and development of III-nitrides-based LEDs.

Автор: Takashi Matsuoka; Yoshihiro Kangawa
Название: Epitaxial Growth of III-Nitride Compounds
ISBN: 3030095428 ISBN-13(EAN): 9783030095420
Издательство: Springer
Рейтинг:
Цена: 46570.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book presents extensive information on the mechanisms of epitaxial growth in III-nitride compounds, drawing on a state-of-the-art computational approach that combines ab initio calculations, empirical interatomic potentials, and Monte Carlo simulations to do so. It discusses important theoretical aspects of surface structures and elemental growth processes during the epitaxial growth of III-nitride compounds. In addition, it discusses advanced fundamental structural and electronic properties, surface structures, fundamental growth processes and novel behavior of thin films in III-nitride semiconductors. As such, it will appeal to all researchers, engineers and graduate students seeking detailed information on crystal growth and its application to III-nitride compounds.

Автор: Gwo
Название: III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions
ISBN: 1107408121 ISBN-13(EAN): 9781107408128
Издательство: Cambridge Academ
Цена: 28510.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Автор: Gwo
Название: III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions
ISBN: 1605111759 ISBN-13(EAN): 9781605111759
Издательство: Cambridge Academ
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Цена: 99270.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Автор: Tae-Yeon Seong; Jung Han; Hiroshi Amano; Hadis Mor
Название: III-Nitride Based Light Emitting Diodes and Applications
ISBN: 9400758626 ISBN-13(EAN): 9789400758629
Издательство: Springer
Рейтинг:
Цена: 139310.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book discusses LED production issues, including needed improvement in growth of high-quality nitride semiconductor epitaxial layers with a low density of dislocations, materials quality, efficiency droop, growth in different orientations and polarization.

Автор: Michael Kneissl; Jens Rass
Название: III-Nitride Ultraviolet Emitters
ISBN: 3319240986 ISBN-13(EAN): 9783319240985
Издательство: Springer
Рейтинг:
Цена: 139310.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book provides a comprehensive overview of the state-of-the-art in group III-nitride based ultraviolet LED and laser technologies, covering different substrate approaches, a review of optical, electronic and structural properties of InAlGaN materials as well as various optoelectronic components.

Автор: Michael Kneissl; Jens Rass
Название: III-Nitride Ultraviolet Emitters
ISBN: 3319371274 ISBN-13(EAN): 9783319371276
Издательство: Springer
Рейтинг:
Цена: 121890.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book provides a comprehensive overview of the state-of-the-art in group III-nitride based ultraviolet LED and laser technologies, covering different substrate approaches, a review of optical, electronic and structural properties of InAlGaN materials as well as various optoelectronic components.

Автор: Zhou
Название: III-Nitride LEDs
ISBN: 9811904359 ISBN-13(EAN): 9789811904356
Издательство: Springer
Рейтинг:
Цена: 107130.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book highlights state-of-the-art in III-nitrides-based light-emitting diodes (LEDs). Motivated by the application prospects in lighting, high-resolution display, and health & medicine, the book systematically introduces the physical fundamentals, epitaxial growth, and device fabrications of III-nitride-based LEDs. Important topics including the structures of chips, device reliability and measurements and the advances in mini and micro LEDs are also discussed. The book is completed with a decade of research experience of the author’s team in the design and fabrication of III-nitrides-based LEDs, presenting the novel achievements in the stress control of the large mismatch heterostructures, defect formation and inhibition mechanism of the heteroepitaxial growth, LED epitaxial technologies, and the fabrication of high-efficient flip-chip LEDs. The book comprises of a valuable reference source for researchers and professionals engaged in the research and development of III-nitrides-based LEDs.