Thermal Reliability of Power Semiconductor Device in the Renewable Energy System, Du
Автор: Xiong Du Название: Thermal Reliability of Power Semiconductor Device in the Renewable Energy System ISBN: 9811931313 ISBN-13(EAN): 9789811931314 Издательство: Springer Рейтинг: Цена: 139750.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This book focuses on the thermal reliability of power semiconductor device by looking at the failure mechanism, thermal parameters monitoring, junction temperature estimation, lifetime evaluation, and thermal management. Theoretical analysis and experimental tests are presented to explain existing reliability improvement techniques. This book is a valuable reference for the students and researchers who pay attention to the thermal reliability design of power semiconductor device.
Автор: Carlo Jacoboni; Paolo Lugli Название: The Monte Carlo Method for Semiconductor Device Simulation ISBN: 3709174538 ISBN-13(EAN): 9783709174531 Издательство: Springer Рейтинг: Цена: 174150.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This volume presents the application of the Monte Carlo method to the simulation of semiconductor devices, reviewing the physics of transport in semiconductors, followed by an introduction to the physics of semiconductor devices.
Автор: Umesh Mishra; Jasprit Singh Название: Semiconductor Device Physics and Design ISBN: 9400797788 ISBN-13(EAN): 9789400797789 Издательство: Springer Рейтинг: Цена: 87060.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: Semiconductor Device Physics and Design teaches readers how to approach device design from the point of view of someone who wants to improve devices and can see the opportunity and challenges.
Автор: P.A. Markowich Название: The Stationary Semiconductor Device Equations ISBN: 3211818928 ISBN-13(EAN): 9783211818923 Издательство: Springer Рейтинг: Цена: 139310.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: Treats the static semiconductor device problem in an "applied mathematics" way. This book analyses the qualitative properties, such as existence and uniqueness of solutions, and quantitative properties, particularly the structure of steady state solutions.
Автор: Carlo Jacoboni; Paolo Lugli Название: The Monte Carlo Method for Semiconductor Device Simulation ISBN: 3211821104 ISBN-13(EAN): 9783211821107 Издательство: Springer Рейтинг: Цена: 191560.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This volume presents the application of the Monte Carlo method to the simulation of semiconductor devices, reviewing the physics of transport in semiconductors, followed by an introduction to the physics of semiconductor devices.
Автор: B. Jayant Baliga Название: Fundamentals of Power Semiconductor Devices ISBN: 1489977651 ISBN-13(EAN): 9781489977656 Издательство: Springer Рейтинг: Цена: 148010.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This book provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown.
Автор: Roy Leventhal; D.J. Carpenter; Lynne Green Название: Semiconductor Modeling: ISBN: 1489991379 ISBN-13(EAN): 9781489991379 Издательство: Springer Рейтинг: Цена: 148010.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание:
Semiconductor Modeling: For Simulating Signal, Power, and Electromagnetic Integrity assists engineers - both recent graduates and working product designers - in designing high-speed circuits. The authors apply circuit theory, circuit simulation tools, and practical experience to help the engineer understand semiconductor modeling as applied to high-speed digital designs. The emphasis is on semiconductor modeling, with PCB transmission line effects, equipment enclosure effects, and other modeling issues discussed as needed. The text addresses many practical considerations, including process variation, model accuracy, validation and verification, signal integrity, and design flow. Readers will benefit from its survey of modeling for semiconductors, packages, and interconnects, along with usable advice on how to get complex, high-speed prototypes to work on the first try.
Highlights include:
- Presents a very complete and well-balanced treatment of modeling of semiconductors, packages, and interconnects. Facilitates reader comprehension of the whole field of high-speed modeling, including digital and RF circuits.
- Combines practical modeling techniques with the latest EDA tools for simulation and successful high-speed digital design. Facilitates resolution of practical, every-day problems.
- Presents modeling from its historical roots to current state of the art. Facilitates keeping abreast of the latest modeling developments as they continue to unfold.
Автор: Md. Rabiul Islam; Youguang Guo; Jianguo Zhu Название: Power Converters for Medium Voltage Networks ISBN: 366244528X ISBN-13(EAN): 9783662445280 Издательство: Springer Рейтинг: Цена: 121890.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This book examines a number of topics, mainly in connection with advances in semiconductor devices and magnetic materials and developments in medium and large-scale renewable power plant technologies, grid integration techniques and new converter topologies, including advanced digital control systems for medium-voltage networks.
Автор: Luo, Fang Lin Название: Advanced DC/AC Inverters ISBN: 1466511354 ISBN-13(EAN): 9781466511354 Издательство: Taylor&Francis Рейтинг: Цена: 209270.00 T Наличие на складе: Есть у поставщика Поставка под заказ.
Автор: Josef Lutz; Heinrich Schlangenotto; Uwe Scheuerman Название: Semiconductor Power Devices ISBN: 331970916X ISBN-13(EAN): 9783319709161 Издательство: Springer Рейтинг: Цена: 214280.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This book discusses semiconductor properties, pn-junctions and the physical phenomena for understanding power devices in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. Special peculiarities of devices from the ascending semiconductor materials SiC and GaN are discussed. This book presents significant improvements compared to its first edition. It includes chapters on packaging and reliability. The chapter on semiconductor technology is written in a more in-depth way by considering 2D- and high concentration effects. The chapter on IGBTs is extended by new technologies and evaluation of its potential. An extended theory of cosmic ray failures is presented. The range of certain important physical relationships, doubted in recent papers for use in device simulation, is cleared and substantiated in this second edition.
Автор: Josef Lutz; Heinrich Schlangenotto; Uwe Scheuerman Название: Semiconductor Power Devices ISBN: 3319890115 ISBN-13(EAN): 9783319890111 Издательство: Springer Рейтинг: Цена: 186330.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This book discusses semiconductor properties, pn-junctions and the physical phenomena for understanding power devices in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. Special peculiarities of devices from the ascending semiconductor materials SiC and GaN are discussed. This book presents significant improvements compared to its first edition. It includes chapters on packaging and reliability. The chapter on semiconductor technology is written in a more in-depth way by considering 2D- and high concentration effects. The chapter on IGBTs is extended by new technologies and evaluation of its potential. An extended theory of cosmic ray failures is presented. The range of certain important physical relationships, doubted in recent papers for use in device simulation, is cleared and substantiated in this second edition.
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