Magnetic Materials and 3D Finite Element Modeling, Bastos, Jo?o Pedro A.

Автор: Samuel, T. S. Arun
Название: Tunneling Field Effect Transistors
ISBN: 1032348763 ISBN-13(EAN): 9781032348766
Издательство: Taylor&Francis
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Цена: 137810.00 T
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Автор: Kamaraj, Sathish-Kumar
Название: Nanostructured Magnetic Materials
ISBN: 1032369825 ISBN-13(EAN): 9781032369822
Издательство: Taylor&Francis
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Цена: 137810.00 T
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Автор: Varvaro, Gaspare
Название: Ultra-High-Density Magnetic Recording
ISBN: 981466958X ISBN-13(EAN): 9789814669580
Издательство: Taylor&Francis
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Цена: 132710.00 T
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Автор: Zhizheng Wu; Azhar Iqbal; Foued Ben Amara
Название: Modeling and Control of Magnetic Fluid Deformable Mirrors for Adaptive Optics Systems
ISBN: 3642438539 ISBN-13(EAN): 9783642438530
Издательство: Springer
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Цена: 139310.00 T
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Описание: This book presents a novel design of wavefront correctors based on magnetic fluid deformable mirrors, along with their corresponding control algorithms. These mirror surface shape control algorithms feature linear, dynamic response useful in optical systems.

Автор: Jichun Li; Yunqing Huang
Название: Time-Domain Finite Element Methods for Maxwell`s Equations in Metamaterials
ISBN: 3642435246 ISBN-13(EAN): 9783642435249
Издательство: Springer
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Цена: 111790.00 T
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Описание: This book provides an up-to-date introduction to the time-domain finite element methods for Maxwell`s equations involving metamaterials, focusing on practical implementation of edge finite element methods for metamaterial Maxwell`s equations.

Автор: Joy Vineetha, Rajeshwari G. L., Singh Hema
Название: Fundamentals of RCS Prediction Methodology Using Parallelized Numerical Electromagnetics Code (Nec) and Finite Element Pre-Processor
ISBN: 9811571635 ISBN-13(EAN): 9789811571633
Издательство: Springer
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Цена: 46570.00 T
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Описание: This book presents a novel methodology for the computation of RCS of metallic structures using a parallelized version of NEC in conjunction with a finite element preprocessor which has been strategically incorporated for simplifying geometry modelling catering to NEC guidelines.

Автор: Senani Raj, Bhaskar Data Ram, Singh Vinod Kumar
Название: Gyrators, Simulated Inductors and Related Immittances: Realizations and Applications
ISBN: 1785616706 ISBN-13(EAN): 9781785616709
Издательство: Institution of Engineering and Technology
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Цена: 197120.00 T
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Описание:

This book provides comprehensive coverage of all major gyrator circuits, simulated inductors and related synthetic impedances. The book offers a thorough review of research in this field, and includes an exceptionally wide range and number of circuit examples. Written by two experts known internationally for their contributions to analogue circuit design, this title covers a broad variety of active devices ranging from bipolar and MOS transistors to the ubiquitous IC op-amps and operational transconductance amplifiers, plus other modern electronic circuits.

Автор: Bastos, Jo?o Pedro A.
Название: Electromagnetic Modeling by Finite Element Methods
ISBN: 0824742699 ISBN-13(EAN): 9780824742690
Издательство: Taylor&Francis
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Цена: 132710.00 T
Наличие на складе: Нет в наличии.

Название: Handbook of Optoelectronic Device Modeling and Simulation
ISBN: 0367875608 ISBN-13(EAN): 9780367875602
Издательство: Taylor&Francis
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Цена: 48990.00 T
Наличие на складе: Невозможна поставка.
Описание: Optoelectronic devices utilize semiconductor structures that enable the interaction and propagation of electrons and photons, and are the foundation of a huge range of devices. This handbook provides an overview of modeling and simulation for optoelectronic device design, analysis, and performance optimization.

Автор: Xavier Marie; Naci Balkan
Название: Semiconductor Modeling Techniques
ISBN: 3642434673 ISBN-13(EAN): 9783642434679
Издательство: Springer
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Цена: 130590.00 T
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Описание: This book describes the key theoretical techniques needed to quantitatively calculate and simulate the properties of semiconductor materials. Covers such techniques as 2D heterostructures, quantum wires, quantum dots and nitrogen containing III-V alloys.

Автор: Alexandru Gheorghe, Florin Constantinescu
Название: New Topics in Simulation and Modeling of RF Circuits
ISBN: 8793379463 ISBN-13(EAN): 9788793379466
Издательство: Taylor&Francis
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Цена: 73490.00 T
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Описание: Addresses the simulation of RF circuits and new models of nonlinear power BAW resonators and filters. The book describes the properties of RF circuits, characterization of circuits with customary and uncustomary behaviour and some theorems of solutions existence and uniqueness for dynamic nonlinear circuits. The main time domain and frequency domain analysis methods for RF circuits are also presented.

Автор: Mahapatra Souvik
Название: Recent Advances in PMOS Negative Bias Temperature Instability: Characterization and Modeling of Device Architecture, Material and Process Impact
ISBN: 9811661197 ISBN-13(EAN): 9789811661198
Издательство: Springer
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Цена: 139750.00 T
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Описание: 1. Basic features, process dependence and variability of NBTI in p-MOSFETs

1.1. Introduction1.2. Measurement of NBTI kinetics1.2.1. Ultra-fast measure-stress-measure method1.2.2. Time evolution of stress and recovery1.2.3. Impact of measurement delay1.2.4. Voltage and temperature dependence 1.2.5. Duty cycle and frequency dependence1.2.6. Empirical estimation of end-of-life degradation1.3. Overview of NBTI process dependence 1.3.1. Impact of SiGe channel1.3.2. Impact of Nitrogen1.3.3. Impact of gate stack thickness scaling 1.3.4. Impact of fin dimension scaling1.3.5. Impact of layout1.4. NBTI in small area devices1.4.1. Stress and recovery kinetics1.4.2. Distribution of degradation1.4.3. Correlation of variability and variable NBTI1.4.4. Random Telegraph Noise1.5. Physical mechanism of NBTI - an overview1.6. Summary

2. NBTI kinetics modeling framework
2.1. Introduction2.2. Overview of NBTI modeling framework2.3. Generation and passivation of interface traps2.3.1. Double interface Reaction-Diffusion (RD) model2.3.2. Physical mechanism of defect depassivation2.3.3. A discussion on RD model parameters2.3.4. DCIV measurement method2.3.5. Prediction of DCIV data2.3.6. Analysis of Ge% and N% impact2.3.7. Comparison of continuum and stochastic frameworks2.4. Occupancy of generated interface traps2.4.1. Transient Trap Occupancy Model (TTOM)2.4.2. Validation of TTOM framework2.5. Hole trapping in pre-existing bulk traps2.6. Validation of TTOM enabled RD and hole trapping2.7. Time Dependent Defect Spectroscopy (TDDS) analysis2.8. Generation of bulk traps2.9. Validation of TTOM enabled RD and bulk trap generation2.10. Summary

3. Modeling of NBTI kinetics in HKMG Si and Si-capped SiGe p-MOSFETs
3.1. Introduction 3.2. Description of process splits3.3. Analysis of Gate First HKMG planar devices 3.3.1. DC stress and recovery kinetics3.3.2. Impact of measurement delay3.3.3. Nitrogen impact on NBTI parameters3.3.4. AC stress kinetics3.4. Analysis of mean stress-recovery kinetics from small area devices3.5. Process dependence of model parameters3.6. Estimation of end-of-life degradation 3.6.1. Calculation by empirical method3.6.2. Calculation by physical model3.6.3. Comparison of empirical and physical methods3.7. Analysis of Si-capped SiGe planar devices3.7.1. Stress and recovery kinetics3.7.2. Voltage acceleration factor3.7.3. Process dependence of model parameters 3.7.4. Estimation of end-of-life degradation3.8. Summary

4. Modeling of NBTI kinetics in HKMG Si and SiGe FDSOI MOSFETs

4.1. Introduction 4.2. Description of process splits 4.3. Analysis of measured data4.3.1. Time kinetics of stress and recovery4.3.2. Impact of Ge% and N%4.3.3. Impact of layout (STI to active spacing)4.3.4. Process dependence of model parameters4.4. Explanation of process dependence4.4.1. Impact of Ge% and N%4.4.2. Impact of layout effect 4.5. Estimation of end-of-life degradation 4.6. Summary