Advanced Nanoelectronics, Ismail, Razali

Автор: Klaus D. Sattler
Название: 21st Century Nanoscience – A Handbook: Nanophotonics, Nanoelectronics, and Nanoplasmonics (Volume Six)
ISBN: 0815356412 ISBN-13(EAN): 9780815356417
Издательство: Taylor&Francis
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Цена: 183750.00 T
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Описание: This up-to-date reference is the most comprehensive summary of the field of nanoscience and its applications. It begins with fundamental properties at the nanoscale and then goes well beyond into the practical aspects of the design, synthesis, and use of nanomaterials in various industries.

Автор: Joachim Knoch
Название: Nanoelectronics: Device Physics, Fabrication, Simulation (De Gruyter Textbook) Part of: De Gruyter Textbook (24 Books) | by Joachim Knoch | Dec 7, 2020
ISBN: 3110574217 ISBN-13(EAN): 9783110574210
Издательство: Walter de Gruyter
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Цена: 63700.00 T
Наличие на складе: Нет в наличии.
Описание: The author presents all aspects, in theory and experiments, of nanoelectronic devices starting from field-effect transistors and leading to alternative device concepts such as Schottky-barrier MOSFETs and band-to-band tunnel FETs. Latest advances in Nanoelectronics, as ultralow power nanoscale devices and the realization of silicon MOS spin qubits, are discussed and finally a brief introduction into device simulations is given as well.

Автор: Khanna, Vinod Kumar
Название: Introductory Nanoelectronics
ISBN: 0367504030 ISBN-13(EAN): 9780367504038
Издательство: Taylor&Francis
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Цена: 42870.00 T
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Описание: This introductory text develops the reader`s fundamental understanding of core principles and experimental aspects underlying the operation of nanoelectronic devices. The author makes a thorough and systematic presentation of electron transport in quantum-confined systems.

Автор: Khanna, Vinod Kumar
Название: Introductory Nanoelectronics
ISBN: 0815384262 ISBN-13(EAN): 9780815384267
Издательство: Taylor&Francis
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Цена: 132710.00 T
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Описание: This introductory text develops the reader`s fundamental understanding of core principles and experimental aspects underlying the operation of nanoelectronic devices. The author makes a thorough and systematic presentation of electron transport in quantum-confined systems.

Автор: Collaert, Nadine
Название: CMOS Nanoelectronics
ISBN: 9814364029 ISBN-13(EAN): 9789814364027
Издательство: Taylor&Francis
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Цена: 117390.00 T
Наличие на складе: Нет в наличии.

Автор: Sattler, Klaus D.
Название: 21st Century Nanoscience – A Handbook
ISBN: 1032335890 ISBN-13(EAN): 9781032335896
Издательство: Taylor&Francis
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Цена: 48990.00 T
Наличие на складе: Нет в наличии.

Автор: Arora, Vijay Kumar
Название: Nanoelectronics
ISBN: 0367575922 ISBN-13(EAN): 9780367575922
Издательство: Taylor&Francis
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Цена: 50010.00 T
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Автор: Lenka Trupti Ranjan, Misra Durgamadhab, Biswas Arindam
Название: Micro and Nanoelectronics Devices, Circuits and Systems: Select Proceedings of Mndcs 2021
ISBN: 9811637660 ISBN-13(EAN): 9789811637667
Издательство: Springer
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Цена: 149060.00 T
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Описание: The book presents select proceedings of the International Conference on Micro and Nanoelectronics Devices, Circuits and Systems (MNDCS-2021). The volume includes cutting-edge research papers in the emerging fields of micro and nanoelectronics devices, circuits, and systems from experts working in these fields over the last decade. The book is a unique collection of chapters from different areas with a common theme and will be immensely useful to academic researchers and practitioners in the industry who work in this field.

Название: Silicon Nanoelectronics
ISBN: 0367392534 ISBN-13(EAN): 9780367392536
Издательство: Taylor&Francis
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Цена: 67360.00 T
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Описание:

Technological advancement in chip development, primarily based on the downscaling of the feature size of transistors, is threatening to come to a standstill as we approach the limits of conventional scaling. For example, when the number of electrons in a device's active region is reduced to less than ten electrons (or holes), quantum fluctuation errors will occur, and when gate insulator thickness becomes too insignificant to block quantum mechanical tunneling, unacceptable leakage will occur. Fortunately, there is truth in the old adage that whenever a door closes, a window opens somewhere else. In this case, that window opening is nanotechnology.

Silicon Nanoelectronics takes a look at at the recent development of novel devices and materials that hold great promise for the creation of still smaller and more powerful chips. Silicon nanodevices are positoned to be particularly relevant in consideration of the existing silicon process infrastructure already in place throughout the semiconductor industry and silicon's consequent compatibility with current CMOS circuits. This is reinforced by the nearly perfect interface that can exist between natural oxide and silicon.

Presenting the contributions of more than 20 leading academic and corporate researchers from the United States and Japan, Silicon Nanoelectronics offers a comprehensive look at this emergent technology. The text includes extensive background information on the physics of silicon nanodevices and practical CMOS scaling. It considers such issues as quantum effects and ballistic transport and resonant tunneling in silicon nanotechnology. A significant amount of attention is given to the all-important silicon single electron transistors and the devices that utilize them.

In offering an update of the current state-of-the-art in the field of silicon nanoelectronics, this volume serves well as a concise reference for students, scientists, engineers, and specialists in various fields, in

Автор: Scheer Elke Et Al
Название: Molecular Electronics: An Introduction To Theory And Experiment
ISBN: 9814282588 ISBN-13(EAN): 9789814282581
Издательство: World Scientific Publishing
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Цена: 121440.00 T
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Описание: Offers a comprehensive overview of the field of molecular electronics. This book focuses on our understanding of the electrical conduction in single-molecule circuits and provides an introduction to the experimental techniques and theoretical concepts. It is suitable for graduate students and advanced undergraduates studying physics and chemistry.

Автор: Duraffourg
Название: Nanoelectromechanical Systems
ISBN: 1848216696 ISBN-13(EAN): 9781848216693
Издательство: Wiley
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Цена: 146730.00 T
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Описание: This book will present the theoretical and technological elements of nanosystems. Among the different topics discussed, the authors include the electromechanical properties of NEMS, the scaling effects that give these their interesting properties for different applications and the current manufacturing processes.

Автор: Latu-Romain
Название: Silicon Carbide One-dimensional Nanostructures
ISBN: 1848217978 ISBN-13(EAN): 9781848217973
Издательство: Wiley
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Цена: 146730.00 T
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Описание: Dedicated to SiC-based 1D nanostructures, this book explains the properties and different growth methods of these nanostructures. It details carburization of silicon nanowires, a growth process for obtaining original Si-SiC core-shell nanowires and SiC nanotubes of high crystalline quality, thanks to the control of the siliconout-diffusion.