Integrated Electronics on Aluminum Nitride, Chaudhuri
Название: Gallium Nitride (GaN) ISBN: 1482220032 ISBN-13(EAN): 9781482220032 Издательство: Taylor&Francis Рейтинг: Цена: 224570.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание:
Addresses a Growing Need for High-Power and High-Frequency Transistors
Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology. A semiconductor commonly used in bright light-emitting diodes, GaN can serve as a great alternative to existing devices used in microelectronics. It has a wide band gap and high electron mobility that gives it special properties for applications in optoelectronic, high-power, and high-frequency devices, and because of its high off-state breakdown strength combined with excellent on-state channel conductivity, GaN is an ideal candidate for switching power transistors.
Explores Recent Progress in High-Frequency GaN Technology
Written by a panel of academic and industry experts from around the globe, this book reviews the advantages of GaN-based material systems suitable for high-frequency, high-power applications. It provides an overview of the semiconductor environment, outlines the fundamental device physics of GaN, and describes GaN materials and device structures that are needed for the next stage of microelectronics and optoelectronics. The book details the development of radio frequency (RF) semiconductor devices and circuits, considers the current challenges that the industry now faces, and examines future trends.
In addition, the authors:
Propose a design in which multiple LED stacks can be connected in a series using interband tunnel junction (TJ) interconnects
Examine GaN technology while in its early stages of high-volume deployment in commercial and military products
Consider the potential use of both sunlight and hydrogen as promising and prominent energy sources for this technology
Introduce two unique methods, PEC oxidation and vapor cooling condensation methods, for the deposition of high-quality oxide layers
A single-source reference for students and professionals, Gallium Nitride (GaN): Physics, Devices, and Technology provides an overall assessment of the semiconductor environment, discusses the potential use of GaN-based technology for RF semiconductor devices, and highlights the current and emerging applications of GaN.
Автор: Runge Название: The Metallurgy of Anodizing Aluminum ISBN: 3319721755 ISBN-13(EAN): 9783319721750 Издательство: Springer Рейтинг: Цена: 93160.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: In this book, the history of the concepts critical to the discovery and development of aluminum, its alloys and the anodizing process are reviewed to provide a foundation for the challenges, achievements, and understanding of the complex relationship between the aluminum alloy and the reactions that occur during anodic oxidation.
Автор: Takashi Matsuoka; Yoshihiro Kangawa Название: Epitaxial Growth of III-Nitride Compounds ISBN: 3030095428 ISBN-13(EAN): 9783030095420 Издательство: Springer Рейтинг: Цена: 46570.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This book presents extensive information on the mechanisms of epitaxial growth in III-nitride compounds, drawing on a state-of-the-art computational approach that combines ab initio calculations, empirical interatomic potentials, and Monte Carlo simulations to do so. It discusses important theoretical aspects of surface structures and elemental growth processes during the epitaxial growth of III-nitride compounds. In addition, it discusses advanced fundamental structural and electronic properties, surface structures, fundamental growth processes and novel behavior of thin films in III-nitride semiconductors. As such, it will appeal to all researchers, engineers and graduate students seeking detailed information on crystal growth and its application to III-nitride compounds.
Автор: Hao Название: Nitride Wide Bandgap Semiconductor ISBN: 1498745121 ISBN-13(EAN): 9781498745123 Издательство: Taylor&Francis Рейтинг: Цена: 178640.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs).
Chapter1: Taking the next step in GaN: bulk GaN substrates and GaN-on-Si epitaxy for electronics.- Chapter2: Lateral GaN HEMT structures.- Chapter3: Vertical GaN Transistors for Power Electronics.- Chapter4: Reliability of GaN-based Power devices.- Chapter5: Validating GaN robustness.- Chapter6: Impact of Parasitics on GaN Based Power Conversion.- Chapter7: GaN in AC/DC Power Converters.- Chapter8: GaN in Switched Mode Power Amplifiers.
Автор: Meneghesso Gaudenzio, Meneghini Matteo, Zanoni Enrico Название: Gallium Nitride-Enabled High Frequency and High Efficiency Power Conversion ISBN: 3030085945 ISBN-13(EAN): 9783030085940 Издательство: Springer Рейтинг: Цена: 93160.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание:
Chapter1: Taking the next step in GaN: bulk GaN substrates and GaN-on-Si epitaxy for electronics.- Chapter2: Lateral GaN HEMT structures.- Chapter3: Vertical GaN Transistors for Power Electronics.- Chapter4: Reliability of GaN-based Power devices.- Chapter5: Validating GaN robustness.- Chapter6: Impact of Parasitics on GaN Based Power Conversion.- Chapter7: GaN in AC/DC Power Converters.- Chapter8: GaN in Switched Mode Power Amplifiers.
Автор: Sheller Mimi Название: Aluminum Dreams: The making of light modernity ISBN: 0262026821 ISBN-13(EAN): 9780262026826 Издательство: MIT Press Рейтинг: Цена: 36110.00 T Наличие на складе: Нет в наличии. Описание:
How aluminum enabled a high-speed, gravity-defying American modernity even as other parts of the world paid the price in environmental damage and political turmoil.
Aluminum shaped the twentieth century. It enabled high-speed travel and gravity-defying flight. It was the material of a streamlined aesthetic that came to represent modernity. And it became an essential ingredient in industrial and domestic products that ranged from airplanes and cars to designer chairs and artificial Christmas trees. It entered modern homes as packaging, foil, pots and pans and even infiltrated our bodies through food, medicine, and cosmetics. In Aluminum Dreams, Mimi Sheller describes how the materiality and meaning of aluminum transformed modern life and continues to shape the world today.
Aluminum, Sheller tells us, changed mobility and mobilized modern life. It enabled air power, the space age and moon landings. Yet, as Sheller makes clear, aluminum was important not only in twentieth-century technology, innovation, architecture, and design but also in underpinning global military power, uneven development, and crucial environmental and health concerns. Sheller describes aluminum's shiny utopia but also its dark side. The unintended consequences of aluminum's widespread use include struggles for sovereignty and resource control in Africa, India, and the Caribbean; the unleashing of multinational corporations; and the pollution of the earth through mining and smelting (and the battle to save it). Using a single material as an entry point to understanding a global history of modernization and its implications for the future, Aluminum Dreams forces us to ask: How do we assemble the material culture of modernity and what are its environmental consequences?
Aluminum Dreams includes a generous selection of striking images of iconic aluminum designs, many in color, drawn from advertisements by Alcoa, Bohn, Kaiser, and other major corporations, pamphlets, films, and exhibitions.
Автор: Jude Mary Runge Название: The Metallurgy of Anodizing Aluminum ISBN: 3319891537 ISBN-13(EAN): 9783319891538 Издательство: Springer Рейтинг: Цена: 120190.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: In this book, the history of the concepts critical to the discovery and development of aluminum, its alloys and the anodizing process are reviewed to provide a foundation for the challenges, achievements, and understanding of the complex relationship between the aluminum alloy and the reactions that occur during anodic oxidation. Empirical knowledge that has long sustained industrial anodizing is clarified by viewing the process as corrosion science, addressing each element of the anodizing circuit in terms of the Tafel Equation. This innovative approach enables a new level of understanding and engineering control for the mechanisms that occur as the oxide nucleates and grows, developing its characteristic highly ordered structure, which impact the practical function of the anodic aluminum oxide.
Reveals Innovative Research on BN Nanotubes and Nanosheets
Nanotubes and Nanosheets: Functionalization and Applications of Boron Nitride and Other Nanomaterials is the first book devoted to nanotubes and nanosheets made of boron nitride (BN). It shows how the properties of BN nanotubes and nanosheets have led to many exciting applications where carbon (C) materials cannot be used, including high-temperature metal-ceramic-based composites, substrates for graphene and other semiconducting layers in electronic devices, reusable absorbents for oil and other contaminants, dry solid lubricants, and biomedical applications.
Researchers working on various aspects of BN nanomaterials share their knowledge and current work on the applications of BN nanotubes and nanosheets. They describe numerous applications, including BN nanotube-reinforced metal-ceramic-based composites, field emission, desalination, cleanup of oil spillages, biosensing and bioimaging, drug delivery, biomedical applications, and energy storage using BCN and TiO2 nanorods and nanosheets as electrode materials. The book also covers C and other nanotubes and nanosheets to give readers a broad view of the latest nanomaterials research.
Автор: Huang Jian-Jang Название: Nitride Semiconductor Light-Emitting Diodes (LEDs): Materials, Technologies and Applications ISBN: 0081014066 ISBN-13(EAN): 9780081014066 Издательство: Elsevier Science Рейтинг: Цена: 213350.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: The development of nitride-based light-emitting diodes (LEDs) has led to advancements in high-brightness LED technology for solid-state lighting, handheld electronics, and advanced bioengineering applications. Nitride Semiconductor Light-Emitting Diodes (LEDs) reviews the fabrication, performance, and applications of this technology that encompass the state-of-the-art material and device development, and practical nitride-based LED design considerations. Part one reviews the fabrication of nitride semiconductor LEDs. Chapters cover molecular beam epitaxy (MBE) growth of nitride semiconductors, modern metalorganic chemical vapor deposition (MOCVD) techniques and the growth of nitride-based materials, and gallium nitride (GaN)-on-sapphire and GaN-on-silicon technologies for LEDs. Nanostructured, non-polar and semi-polar nitride-based LEDs, as well as phosphor-coated nitride LEDs, are also discussed. Part two covers the performance of nitride LEDs, including photonic crystal LEDs, surface plasmon enhanced LEDs, color tuneable LEDs, and LEDs based on quantum wells and quantum dots. Further chapters discuss the development of LED encapsulation technology and the fundamental efficiency droop issues in gallium indium nitride (GaInN) LEDs. Finally, part three highlights applications of nitride LEDs, including liquid crystal display (LCD) backlighting, infrared emitters, and automotive lighting. Nitride Semiconductor Light-Emitting Diodes (LEDs) is a technical resource for academics, physicists, materials scientists, electrical engineers, and those working in the lighting, consumer electronics, automotive, aviation, and communications sectors.
Автор: Tae-Yeon Seong; Jung Han; Hiroshi Amano; Hadis Mor Название: III-Nitride Based Light Emitting Diodes and Applications ISBN: 9400758626 ISBN-13(EAN): 9789400758629 Издательство: Springer Рейтинг: Цена: 139310.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This book discusses LED production issues, including needed improvement in growth of high-quality nitride semiconductor epitaxial layers with a low density of dislocations, materials quality, efficiency droop, growth in different orientations and polarization.
Автор: Michael Kneissl; Jens Rass Название: III-Nitride Ultraviolet Emitters ISBN: 3319371274 ISBN-13(EAN): 9783319371276 Издательство: Springer Рейтинг: Цена: 121890.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This book provides a comprehensive overview of the state-of-the-art in group III-nitride based ultraviolet LED and laser technologies, covering different substrate approaches, a review of optical, electronic and structural properties of InAlGaN materials as well as various optoelectronic components.
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