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Theoretical Modeling of Epitaxial Graphene Growth on the Ir(111) Surface, Holly Alexandra Tetlow


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Автор: Holly Alexandra Tetlow
Название:  Theoretical Modeling of Epitaxial Graphene Growth on the Ir(111) Surface
ISBN: 9783319881409
Издательство: Springer
Классификация:


ISBN-10: 331988140X
Обложка/Формат: Soft cover
Страницы: 182
Вес: 0.31 кг.
Дата издания: 2017
Серия: Springer Theses
Язык: English
Издание: Softcover reprint of
Иллюстрации: 63 illustrations, color; 45 illustrations, black and white; xv, 182 p. 108 illus., 63 illus. in color.
Размер: 235 x 155
Читательская аудитория: Professional & vocational
Основная тема: Physics
Ссылка на Издательство: Link
Рейтинг:
Поставляется из: Германии
Описание: The results show that the decomposition mechanism involves production of C monomers by breaking the C-C bond. In turn, the thesis explores the nucleation of carbon clusters on the surface from C monomers prior to graphene formation.

Theoretical Modeling of Epitaxial Graphene Growth on the Ir(111) Surface

Автор: Holly Alexandra Tetlow
Название: Theoretical Modeling of Epitaxial Graphene Growth on the Ir(111) Surface
ISBN: 3319659715 ISBN-13(EAN): 9783319659718
Издательство: Springer
Рейтинг:
Цена: 93160.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The results show that the decomposition mechanism involves production of C monomers by breaking the C-C bond. In turn, the thesis explores the nucleation of carbon clusters on the surface from C monomers prior to graphene formation.

Epitaxial Graphene on Silicon Carbide: Modelling, Characterization, and Applications

Автор: Gemma Rius, Philippe Godignon
Название: Epitaxial Graphene on Silicon Carbide: Modelling, Characterization, and Applications
ISBN: 9814774200 ISBN-13(EAN): 9789814774208
Издательство: Taylor&Francis
Рейтинг:
Цена: 118410.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This is the first book dedicated exclusively to epitaxial graphene on silicon carbide (EG-SiC). It comprehensively addresses all fundamental aspects relevant for the study and technology development of EG materials and their applications, using quantum Hall effect studies and probe techniques such as scanning tunneling microscopy and atomic resolution imaging based on transmission electron microscopy. It presents the state of the art of the synthesis of EG-SiC and profusely explains it as a function of SiC substrate characteristics such as polytype, polarity, and wafer cut as well as the in situ and ex situ conditioning techniques, including H2 pre-deposition annealing and chemical mechanical polishing. It also describes growth studies, including the most popular characterization techniques, such as ultrahigh-vacuum, partial-pressure, or graphite-cap sublimation techniques, for high-quality controlled deposition.   The book includes relevant examples on synthesis and characterization techniques as well as device fabrication processing and performance and complements them with theoretical modeling and simulation studies, which are helpful in the fundamental comprehension of EG-SiC substrates and their potential use in electronic applications. It addresses the fundamental aspects of EG-SiC using quantum Hall effect studies as well as probe techniques, such as scanning tunneling microscopy or atomic resolution imaging based on transmission electron microscopy. It comprises chapters that present reviews and vision on the current state of the art of experts in physics, electronic engineering, materials science, and nanotechnology from Europe and Asia.

Epitaxial Growth of III-Nitride Compounds

Автор: Matsuoka
Название: Epitaxial Growth of III-Nitride Compounds
ISBN: 3319766406 ISBN-13(EAN): 9783319766409
Издательство: Springer
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Цена: 46570.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book presents extensive information on the mechanisms of epitaxial growth in III-nitride compounds, drawing on a state-of-the-art computational approach that combines ab initio calculations, empirical interatomic potentials, and Monte Carlo simulations to do so.

Epitaxial Growth of III-Nitride Compounds

Автор: Takashi Matsuoka; Yoshihiro Kangawa
Название: Epitaxial Growth of III-Nitride Compounds
ISBN: 3030095428 ISBN-13(EAN): 9783030095420
Издательство: Springer
Рейтинг:
Цена: 46570.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book presents extensive information on the mechanisms of epitaxial growth in III-nitride compounds, drawing on a state-of-the-art computational approach that combines ab initio calculations, empirical interatomic potentials, and Monte Carlo simulations to do so. It discusses important theoretical aspects of surface structures and elemental growth processes during the epitaxial growth of III-nitride compounds. In addition, it discusses advanced fundamental structural and electronic properties, surface structures, fundamental growth processes and novel behavior of thin films in III-nitride semiconductors. As such, it will appeal to all researchers, engineers and graduate students seeking detailed information on crystal growth and its application to III-nitride compounds.

Crystal Structure,Electronic and Optical Properties of Epitaxial Alkaline Earth Niobate Thin Films

Автор: Dongyang Wan
Название: Crystal Structure,Electronic and Optical Properties of Epitaxial Alkaline Earth Niobate Thin Films
ISBN: 3319659111 ISBN-13(EAN): 9783319659114
Издательство: Springer
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Цена: 102480.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This impressive thesis offers a comprehensive scientific study of the alkaline earth niobates and describes their nonlinear optical properties for the first time.

Optical Characterization of Epitaxial Semiconductor Layers

Автор: G?nther Bauer; Wolfgang Richter
Название: Optical Characterization of Epitaxial Semiconductor Layers
ISBN: 364279680X ISBN-13(EAN): 9783642796807
Издательство: Springer
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Цена: 95770.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The characterization of epitaxial layers and their surfaces has benefitted a lot from the enormous progress of optical analysis techniques during the last decade.

Lateral Alignment of Epitaxial Quantum Dots

Автор: Oliver G. Schmidt
Название: Lateral Alignment of Epitaxial Quantum Dots
ISBN: 3642079911 ISBN-13(EAN): 9783642079917
Издательство: Springer
Рейтинг:
Цена: 241310.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book describes the full range of possible strategies for laterally aligning self-assembled quantum dots on a substrate surface, beginning with pure self-ordering mechanisms and culminating with forced alignment by lithographic positioning.

Crystal Structure,Electronic and Optical Properties of Epitaxial Alkaline Earth Niobate Thin Films

Автор: Dongyang Wan
Название: Crystal Structure,Electronic and Optical Properties of Epitaxial Alkaline Earth Niobate Thin Films
ISBN: 3319881299 ISBN-13(EAN): 9783319881294
Издательство: Springer
Рейтинг:
Цена: 93160.00 T
Наличие на складе: Нет в наличии.
Описание: This impressive thesis offers a comprehensive scientific study of the alkaline earth niobates and describes their nonlinear optical properties for the first time.

Physics and Chemistry of Graphene (Second Edition)

Название: Physics and Chemistry of Graphene (Second Edition)
ISBN: 9814800384 ISBN-13(EAN): 9789814800389
Издательство: Taylor&Francis
Рейтинг:
Цена: 197010.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book comprehensively discusses the fundamental issues related to the electronic, magnetic, and chemical properties of condensed polycyclic hyodrocarbon molecules, nanographene, and graphene.

2D Inorganic Materials Beyond Graphene

Автор: Rao C N R & Waghmare Umesh Vasudeo
Название: 2D Inorganic Materials Beyond Graphene
ISBN: 1786342693 ISBN-13(EAN): 9781786342690
Издательство: World Scientific Publishing
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Цена: 158400.00 T
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Описание:

Two-dimensional materials have had widespread applications in nanoelectronics, catalysis, gas capture, water purification, energy storage and conversion. Initially based around graphene, research has since moved on to looking at alternatives, including transitions metal dichalcogenides, layered topological insulators, metallic mono-chalcogenides, borocarbonitrides and phosphorene.

This book provides a review of research in the field of these materials, including investigation into their defects, analysis on hybrid structures focusing on their properties and synthesis, and characterization and applications of 2D materials beyond graphene. It is designed to be a single-point reference for students, teachers and researchers of chemistry and its related subjects, particularly in the field of nanomaterials.


Spin Chemical Physics Of Graphene

Название: Spin Chemical Physics Of Graphene
ISBN: 9814774111 ISBN-13(EAN): 9789814774116
Издательство: Taylor&Francis
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Цена: 96970.00 T
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Описание:

Graphene's nickname 'miracle material' normally means the material superior properties. However, all these characteristics are only the outward manifestation of the wonderful nature of graphene. The real miracle of graphene is that the specie is a union of two entities: a physical - and a chemical one, each of which is unique in its own way.

The book concerns a very close interrelationship between graphene physics and chemistry as expressed via typical spin effects of a chemical physics origin. Based on quantum-chemical computations, the book is nevertheless addressed to the reflection of physical reality and it is aimed at an understanding of what constitutes graphene as an object of material science - sci graphene - on the one hand, and as a working material- high tech graphene - for a variety of attractive applications largely discussed and debated in the press, on the other.

The book is written by a user of quantum chemistry, sufficiently experienced in material science, and the chemical physics of graphene is presented as the user view based on results of extended computational experiments in tight connection with their relevance to physical and chemical realities. The experiments have been carried out at the same theoretical platform, which allows considering different sides of the graphene life at the same level in light of its chemical peculiarity.


Graphene Photonics

Автор: Liu Jia-Ming
Название: Graphene Photonics
ISBN: 1108476686 ISBN-13(EAN): 9781108476683
Издательство: Cambridge Academ
Рейтинг:
Цена: 88710.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: A self-contained text covering the basic concepts, theory, experimental results, and applications of graphene photonics. Systematically developing each theoretical model from the ground up, it is ideal for graduate students and researchers in photonics, optoelectronics, nanoscience and nanotechnology, and optical and solid-state physics.


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