Ordering Phenomena in Rare-Earth Nickelate Heterostructures, Hepting Matthias
Автор: M. Willander Название: Silicon-Germanium Strained Layers and Heterostructures, ISBN: 0127521836 ISBN-13(EAN): 9780127521831 Издательство: Elsevier Science Рейтинг: Цена: 196510.00 T Наличие на складе: Поставка под заказ. Описание: The study of Silicone Germanium strained layers has implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices. This work describes its developments in technology and modelling. It also includes a bibliography of over 400 papers providing an overview of the subject.
Автор: Matthias Hepting Название: Ordering Phenomena in Rare-Earth Nickelate Heterostructures ISBN: 3319605305 ISBN-13(EAN): 9783319605302 Издательство: Springer Рейтинг: Цена: 102480.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: Introduction: Transition Metal Oxides and their Heterostructures.- The Rare-earth Nickelates.- Experimental Techniques.- Tunable Order Parameters in Nickelate Heterostructures.- Complex Magnetic Order in Nickelate Slabs.
Автор: L.L. Chang; K. Ploog Название: Molecular Beam Epitaxy and Heterostructures ISBN: 940108744X ISBN-13(EAN): 9789401087445 Издательство: Springer Рейтинг: Цена: 81050.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: Proceedings of the NATO Advanced Study Institute on Molecular Beam Epitaxy (MBE) and Heterostructures, Erice, Italy, March 7-19, 1983
Автор: Holwill Matthew Название: Nanomechanics in van der Waals Heterostructures ISBN: 3030185311 ISBN-13(EAN): 9783030185312 Издательство: Springer Рейтинг: Цена: 93160.00 T Наличие на складе: Поставка под заказ.
Автор: Yasuda Kenji Название: Emergent Transport Properties of Magnetic Topological Insulator Heterostructures ISBN: 9811571821 ISBN-13(EAN): 9789811571824 Издательство: Springer Рейтинг: Цена: 93160.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This book reveals unique transport phenomena and functionalities in topological insulators coupled with magnetism and superconductivity.
Автор: Pohl Udo W. Название: Epitaxy of Semiconductors: Physics and Fabrication of Heterostructures ISBN: 3030438686 ISBN-13(EAN): 9783030438685 Издательство: Springer Рейтинг: Цена: 79190.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: The book discusses the structural and electronic properties of strained epitaxial layers, the thermodynamics and kinetics of layer growth, and it describes the major growth techniques: metalorganic vapor-phase epitaxy, molecular-beam epitaxy, and liquid-phase epitaxy.
Автор: Bimberg Название: Quantum Dot Heterostructures ISBN: 0471973882 ISBN-13(EAN): 9780471973881 Издательство: Wiley Рейтинг: Цена: 388550.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This book presents a comprehensive overview of the most recent advances in the field, including the way such structures are grown, how experiments on the structures have clarified long-standing theoretical predictions, how the structures are characterized, and the performance of devices developed from the structures.
Автор: Satishchandra B. Ogale Название: Thin Films and Heterostructures for Oxide Electronics ISBN: 1441938389 ISBN-13(EAN): 9781441938381 Издательство: Springer Рейтинг: Цена: 174130.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: Oxides form a broad subject area of research and technology development which encompasses different disciplines such as materials science, solid state chemistry, physics etc.
Автор: Yu-Chuan Lin Название: Properties of Synthetic Two-Dimensional Materials and Heterostructures ISBN: 3030003310 ISBN-13(EAN): 9783030003319 Издательство: Springer Рейтинг: Цена: 93160.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This book represents a significant advance in our understanding of the synthesis and properties of two-dimensional (2D) materials. The author’s work breaks new ground in the understanding of a number of 2D crystals, including atomically thin transition metal dichalcogenides, graphene, and their heterostructures, that are technologically important to next-generation electronics. In addition to critical new results on the direct growth of 2D heterostructures, it also details growth mechanisms, surface science, and device applications of “epi-grade” 2D semiconductors, which are essential to low-power electronics, as well as for extending Moore’s law. Most importantly, it provides an effective alternative to mechanically exfoliate 2D layers for practical applications.
Автор: Y. Nissim; Emmanuel Rosencher Название: Heterostructures on Silicon: One Step Further with Silicon ISBN: 940106900X ISBN-13(EAN): 9789401069007 Издательство: Springer Рейтинг: Цена: 81050.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: Proceedings of the NATO Advanced Research Workshop, Cargese, Corsica, France, May 15-20, 1988
Автор: Alex Frano Название: Spin Spirals and Charge Textures in Transition-Metal-Oxide Heterostructures ISBN: 3319361538 ISBN-13(EAN): 9783319361536 Издательство: Springer Рейтинг: Цена: 87060.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This thesis presents the results of resonant and non-resonant x-ray scattering experiments demonstrating the control of collective ordering phenomena in epitaxial nickel-oxide and copper-oxide based superlattices.
This thesis focuses on the energy band engineering of graphene. It presents pioneering findings on the controlled growth of graphene and graphene-based heterostructures, as well as scanning tunneling microscopy/scanning tunneling spectroscopy (STM/STS) studies on their electronic structures. The thesis primarily investigates two classes of graphene-based systems: (i) twisted bilayer graphene, which was synthesized on Rh substrates and manifests van Hove singularities near Fermi Level, and (ii) in-plane h-BN-G heterostructures, which were controllably synthesized in an ultrahigh vacuum chamber and demonstrate intriguing electronic properties on the interface. In short, the thesis offers revealing insights into the energy band engineering of graphene-based nanomaterials, which will greatly facilitate future graphene applications.
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