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High-Frequency Gan Electronic Devices, Fay Patrick, Jena Debdeep, Maki Paul


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Цена: 111790.00T
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Склад Америка: 171 шт.  
При оформлении заказа до: 2025-07-28
Ориентировочная дата поставки: Август-начало Сентября
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Автор: Fay Patrick, Jena Debdeep, Maki Paul
Название:  High-Frequency Gan Electronic Devices
ISBN: 9783030202101
Издательство: Springer
Классификация:

ISBN-10: 3030202100
Обложка/Формат: Paperback
Страницы: 309
Вес: 0.45 кг.
Дата издания: 25.08.2020
Язык: English
Издание: 1st ed. 2020
Иллюстрации: 200 tables, color; 199 illustrations, color; 22 illustrations, black and white; viii, 309 p. 221 illus., 199 illus. in color.
Размер: 23.39 x 15.60 x 1.70 cm
Читательская аудитория: Professional & vocational
Ссылка на Издательство: Link
Рейтинг:
Поставляется из: Германии
Описание:

Chapter 1. Introduction.- Chapter 2.High Power High Frequency Transistors: A Materials Perspective.- Chapter 3. Isotope Engineering of GaN for Boosting Transistor Speeds.- Chapter 4. Linearity Aspects of High Power Amplification in GaN Transistors.- Chapter 5. III-Nitride Tunneling Hot Electron Transfer Amplifier (THETA).- Chapter 6.Plasma-Wave Propagation in GaN and Its Applications.- Chapter 7.Numerical Simulation of Distributed Electromagnetic and Plasma-wave Effect Devices.- Chapter 8.Resonant Tunneling Transport in Polar III-Nitride Heterostructures.- Chapter 9.Fabrication and Characterization of GaN/AlN Resonant Tunneling Diodes.- Chapter 10.Non-Contact Metrology for mm-wave and THz Electronics.



Автор: Horowitz Paul
Название: The art of electronics The x Chapters
ISBN: 1108499945 ISBN-13(EAN): 9781108499941
Издательство: Cambridge Academ
Рейтинг:
Цена: 59130.00 T
Наличие на складе: Заказано в издательстве.
Описание: The x-Chapters is the missing pieces of The Art of Electronics, to be used either as its complement, or as a direct route to exploring some of the most exciting and oft-overlooked topics in advanced electronic engineering. Students, researchers and practitioners will find here techniques and circuits that are unavailable elsewhere.

High-Frequency GaN Electronic Devices

Автор: Patrick Fay; Debdeep Jena; Paul Maki
Название: High-Frequency GaN Electronic Devices
ISBN: 3030202070 ISBN-13(EAN): 9783030202071
Издательство: Springer
Рейтинг:
Цена: 111790.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:

This book brings together recent research by scientists and device engineers working on both aggressively-scaled conventional transistors as well as unconventional high-frequency device concepts in the III-N material system. Device concepts for mm-wave to THz operation based on deeply-scaled HEMTs, as well as distributed device designs based on plasma-wave propagation in polarization-induced 2DEG channels, tunneling, and hot-carrier injection are discussed in detail. In addition, advances in the underlying materials science that enable these demonstrations, and advancements in metrology that permit the accurate characterization and evaluation of these emerging device concepts are also included. Targeting readers looking to push the envelope in GaN-based electronics device research, this book provides a current, comprehensive treatment of device concepts and physical phenomenology suitable for applying GaN and related materials to emerging ultra-high-frequency applications.

  • Offers readers an integrated treatment of the state of the art in both conventional (i.e., HEMT) scaling as well as unconventional device architectures suitable for amplification and signal generation in the mm-wave and THz regime using GaN-based devices, written by authors that are active and widely-known experts in the field;
  • Discusses both conventional scaled HEMTs (into the deep mm-wave) as well as unconventional approaches to address the mm-wave and THz regimes;
  • Provides "vertically integrated" coverage, including materials science that enables these recent advances, as well as device physics & design, and metrology techniques;
  • Includes fundamental physics, as well as numerical simulations and experimental realizations.



Advanced Simulation  Methods For Gallium Nitride Electronic Devices: An accurate analysis of  state-of-the-art high-frequency and high-power Gallium Nitride High   Electron Mobility Transistors

Автор: Fabio Alessio Marino
Название: Advanced Simulation Methods For Gallium Nitride Electronic Devices: An accurate analysis of state-of-the-art high-frequency and high-power Gallium Nitride High Electron Mobility Transistors
ISBN: 363931929X ISBN-13(EAN): 9783639319293
Издательство: LAP LAMBERT Academic Publishing
Рейтинг:
Цена: 30500.00 T
Наличие на складе: Нет в наличии.

Radio Frequency Micromachined Switches, Switching Networks, and Phase Shifters

Автор: Shiban Kishen Koul, Sukomal Dey
Название: Radio Frequency Micromachined Switches, Switching Networks, and Phase Shifters
ISBN: 0815361432 ISBN-13(EAN): 9780815361435
Издательство: Taylor&Francis
Рейтинг:
Цена: 163330.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The book covers extensive and systematic measurement study of the MEMS switches that includes mechanical, electrical, transient, linearity, power handling, temperature stability, loss and reliability. Study of switch reliability is one of the critical features in this book.

GaN and ZnO-based Materials and Devices

Автор: Stephen Pearton
Название: GaN and ZnO-based Materials and Devices
ISBN: 3642433235 ISBN-13(EAN): 9783642433238
Издательство: Springer
Рейтинг:
Цена: 130590.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book offers a review and summary of recent progress in scientifically and technologically important AlInGaN and ZnO materials systems, including applications in UV/visible optoelectronics and in high-power/high-frequency microwave devices.

Handbook of GaN Semiconductor Materials and Devices

Название: Handbook of GaN Semiconductor Materials and Devices
ISBN: 0367875314 ISBN-13(EAN): 9780367875312
Издательство: Taylor&Francis
Рейтинг:
Цена: 48990.00 T
Наличие на складе: Невозможна поставка.
Описание: This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It covers the basics of semiconductor materials, physics, growth and characterization techniques.

Power GaN Devices

Автор: Matteo Meneghini; Gaudenzio Meneghesso; Enrico Zan
Название: Power GaN Devices
ISBN: 3319827561 ISBN-13(EAN): 9783319827568
Издательство: Springer
Рейтинг:
Цена: 158380.00 T
Наличие на складе: Поставка под заказ.
Описание: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field.

GaN and ZnO-based Materials and Devices

Автор: Pearton
Название: GaN and ZnO-based Materials and Devices
ISBN: 3642235204 ISBN-13(EAN): 9783642235207
Издательство: Springer
Рейтинг:
Цена: 156720.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The AlInGaN and ZnO materials systems have proven to be one of the scientifically and technologically important areas of development over the past 15 years, with applications in UV/visible optoelectronics and in high-power/high-frequency microwave devices. The pace of advances in these areas has been remarkable and the wide band gap community relies on books like the one we are proposing to provide a review and summary of recent progress.

Surface Electromagnetics: With Applications in Antenna, Microwave, and Optical Engineering

Автор: Fan Yang, Yahya Rahmat-Samii
Название: Surface Electromagnetics: With Applications in Antenna, Microwave, and Optical Engineering
ISBN: 1108470262 ISBN-13(EAN): 9781108470261
Издательство: Cambridge Academ
Рейтинг:
Цена: 185850.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Written by leading experts in the field, this text provides systematic coverage of the theoretical analysis, physics, functional designs, and engineering applications of advanced engineered electromagnetic surfaces. It is invaluable reading for researchers, practising engineers and students in electromagnetics, antennas, metasurfaces and optics.

Progress in High-Efficient Solution Process Organic Photovoltaic Devices

Автор: Yang Yang; Gang Li
Название: Progress in High-Efficient Solution Process Organic Photovoltaic Devices
ISBN: 3662455080 ISBN-13(EAN): 9783662455081
Издательство: Springer
Рейтинг:
Цена: 156720.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Solution processable organic solar cells - polymer or solution processable small molecules - have the potential to significantly reduce the costs for solar electricity and energy payback time due to the low material costs for the cells, low cost and fast fabrication processes (ambient, roll-to-roll), high material utilization etc.

Progress in High-Efficient Solution Process Organic Photovoltaic Devices

Автор: Yang Yang; Gang Li
Название: Progress in High-Efficient Solution Process Organic Photovoltaic Devices
ISBN: 3662520907 ISBN-13(EAN): 9783662520901
Издательство: Springer
Рейтинг:
Цена: 130590.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Solution processable organic solar cells - polymer or solution processable small molecules - have the potential to significantly reduce the costs for solar electricity and energy payback time due to the low material costs for the cells, low cost and fast fabrication processes (ambient, roll-to-roll), high material utilization etc.

High-Frequency Characterization of Electronic Packaging

Автор: Luc Martens
Название: High-Frequency Characterization of Electronic Packaging
ISBN: 0792383079 ISBN-13(EAN): 9780792383079
Издательство: Springer
Рейтинг:
Цена: 130610.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Offers an insight into how high-frequency characterization of electronic packaging should be done and describes the problems that have to be tackled, especially in performing accurate measurements on modern IC-packages and in determination of circuit models.


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