Metal Impurities in Silicon- And Germanium-Based Technologies: Origin, Characterization, Control, and Device Impact, Claeys Cor, Simoen Eddy

Автор: Claeys
Название: Metal Impurities in Silicon- and Germanium-Based Technologies
ISBN: 3319939246 ISBN-13(EAN): 9783319939247
Издательство: Springer
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Цена: 158380.00 T
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Описание: material science, defect engineering, device processing, defect and device characterization, and device physics and engineering.

Автор: M. Willander
Название: Silicon-Germanium Strained Layers and Heterostructures,
ISBN: 0127521836 ISBN-13(EAN): 9780127521831
Издательство: Elsevier Science
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Цена: 196510.00 T
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Описание: The study of Silicone Germanium strained layers has implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices. This work describes its developments in technology and modelling. It also includes a bibliography of over 400 papers providing an overview of the subject.

Автор: Klaus Graff
Название: Metal Impurities in Silicon-Device Fabrication
ISBN: 3642629652 ISBN-13(EAN): 9783642629655
Издательство: Springer
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Цена: 87070.00 T
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Описание: This up-to-date monograph provides a thorough review of the relevant data and properties of the transition-metal impurities generated during silicon-sample and device fabrication. This new edition includes important recent data and many new tables.

Автор: Peter Pichler
Название: Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon
ISBN: 3709172047 ISBN-13(EAN): 9783709172049
Издательство: Springer
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Цена: 279500.00 T
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Описание: This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon.

Автор: Shiraki Yasuhiro, Usami Noritaka, Shiraki Y.
Название: Silicon-Germanium (Sige) Nanostructures: Production, Properties and Applications in Electronics
ISBN: 0081017391 ISBN-13(EAN): 9780081017395
Издательство: Elsevier Science
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Цена: 202120.00 T
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Описание: Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices.The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain engineering and modelling. Part three covers the material properties of SiGe nanostructures, including chapters on such topics as strain-induced defects, transport properties and microcavities and quantum cascade laser structures. In Part four, devices utilising SiGe alloys are discussed. Chapters cover ultra large scale integrated applications, MOSFETs and the use of SiGe in different types of transistors and optical devices.With its distinguished editors and team of international contributors, Silicon-germanium (SiGe) nanostructures is a standard reference for researchers focusing on semiconductor devices and materials in industry and academia, particularly those interested in nanostructures.