Porous silicon: from formation to applications: optoelectronics, microelectronics, and energy technology applications, volume three,
Автор: Latham, Gloria (honorary Senior Lecturer, Faculty Of Education, Honorary Senior Lecturer, Faculty Of Education, The University Of Sydney) Malone, Kare Название: Porous silicon: from formation to applications: optoelectronics, microelectronics, and energy technology applications, volume three ISBN: 036757537X ISBN-13(EAN): 9780367575373 Издательство: Taylor&Francis Рейтинг: Цена: 45930.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This book covers the basic fundamentals of electronics and their applications in textiles and clothing product development. With increasing awareness about the e-textiles, researchers and scientists are finding ways to treat the textile materials integrating with electronics for communication/signal transferring applications. The book discusses
Автор: Jose Martinez-Duart Название: Nanotechnology for Microelectronics and Optoelectronics, ISBN: 0080445535 ISBN-13(EAN): 9780080445533 Издательство: Elsevier Science Рейтинг: Цена: 176850.00 T Наличие на складе: Поставка под заказ. Описание: When solids are reduced to the nanometer scale, they exhibit new and exciting behaviours which constitute the basis for a new generation of electronic devices. This title outlines the fundamental solid-state physics concepts that explain the properties of matter caused by this reduction of solids to the nanometer scale.
Автор: Marian Vladescu, Cornel T. Panait, Razvan Tamas, George Caruntu, Ionica Cristea Название: Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VIII ISBN: 1510604243 ISBN-13(EAN): 9781510604247 Издательство: Mare Nostrum (Eurospan) Рейтинг: Цена: 168170.00 T Наличие на складе: Невозможна поставка. Описание: Proceedings of SPIE offer access to the latest innovations in research and technology and are among the most cited references in patent literature.
Автор: Yikai Su, Chongjin Xie, Shaohua Yu, Jose Capmany, Yi Luo, Yoshiaki Nakano, Songlin Zhuang, Yue Hao, Akihiko Yoshikawa Название: International Conference on Optoelectronics and Microelectronics Technology and Application ISBN: 151060989X ISBN-13(EAN): 9781510609891 Издательство: Mare Nostrum (Eurospan) Рейтинг: Цена: 121970.00 T Наличие на складе: Невозможна поставка. Описание: Proceedings of SPIE offer access to the latest innovations in research and technology and are among the most cited references in patent literature.
Автор: Korotcenkov, Ghenadii Название: Porous Silicon ISBN: 0367570238 ISBN-13(EAN): 9780367570231 Издательство: Taylor&Francis Рейтинг: Цена: 91860.00 T Наличие на складе: Нет в наличии.
Автор: Korotcenkov, Ghenadii Название: Porous Silicon ISBN: 1482264528 ISBN-13(EAN): 9781482264524 Издательство: Taylor&Francis Рейтинг: Цена: 234790.00 T Наличие на складе: Нет в наличии.
Автор: Vivien Laurent, Pavesi Lorenzo Название: Handbook of Silicon Photonics ISBN: 0367576481 ISBN-13(EAN): 9780367576486 Издательство: Taylor&Francis Рейтинг: Цена: 48990.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: With many illustrations, including some in color, this handbook provides an up-to-date reference to the broad and rapidly changing area of silicon photonics. It shows how basic science and innovative technological applications are pushing the field forward. Suitable for both specialists and newcomers, the book covers a broad spectrum of material
Название: Nanoscale Silicon Devices ISBN: 113874932X ISBN-13(EAN): 9781138749320 Издательство: Taylor&Francis Рейтинг: Цена: 64300.00 T Наличие на складе: Нет в наличии. Описание: Is Bigger Always Better? Explore the Behavior of Very Small Devices as Described by Quantum Mechanics Smaller is better when it comes to the semiconductor transistor. Nanoscale Silicon Devices examines the growth of semiconductor device miniaturization and related advances in material, device, circuit, and system design, and highlights the use of device scaling within the semiconductor industry. Device scaling, the practice of continuously scaling down the size of metal-oxide-semiconductor field-effect transistors (MOSFETs), has significantly improved the performance of small computers, mobile phones, and similar devices. The practice has resulted in smaller delay time and higher device density in a chip without an increase in power consumption. This book covers recent advancements and considers the future prospects of nanoscale silicon (Si) devices. It provides an introduction to new concepts (including variability in scaled MOSFETs, thermal effects, spintronics-based nonvolatile computing systems, spin-based qubits, magnetoelectric devices, NEMS devices, tunnel FETs, dopant engineering, and single-electron transfer), new materials (such as high-k dielectrics and germanium), and new device structures in three dimensions. It covers the fundamentals of such devices, describes the physics and modeling of these devices, and advocates further device scaling and minimization of energy consumption in future large-scale integrated circuits (VLSI). Additional coverage includes: Physics of nm scaled devices in terms of quantum mechanics Advanced 3D transistors: tri-gate structure and thermal effects Variability in scaled MOSFET Spintronics on Si platform NEMS devices for switching, memory, and sensor applications The concept of ballistic transport The present status of the transistor variability and more An indispensable resource, Nanoscale Silicon Devices serves device engineers and academic researchers (including graduate students) in the fields of electron devices, solid-state physics, and nanotechnology.
Coined as the third revolution in electronics is under way; Manufacturing is going digital, driven by computing revolution, powered by MOS technology, in particular, by the CMOS technology and its development.
In this book, the scaling challenges for CMOS: SiGe BiCMOS, THz and niche technology are covered; the first article looks at scaling challenges for CMOS from an industrial point of view (review of the latest innovations); the second article focuses on SiGe BiCMOS technologies (deals with high-speed up to the THz-region), and the third article reports on circuits associated with source/drain integration in 14 nm and beyond FinFET technology nodes. Followed by the last two articles on niche applications for emerging technologies: one deals with carbon nanotube network and plasmonics for the THz region carbon, while the other reviews the recent developments in integrated on-chip nano-optomechanical systems.
Автор: R.C. Alferness; Theodor Tamir; W.K. Burns; J.F. Do Название: Guided-Wave Optoelectronics ISBN: 3642970761 ISBN-13(EAN): 9783642970764 Издательство: Springer Рейтинг: Цена: 69650.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: Specifically, the amalgamation of electronic and optics compo- nents into an integrated optoelectronics format is expected to provide a wide range of systems having miniaturized, high speed, broad band and reliable components for telecommunications, data processing, optical computing and other applications in the near and far future.
This book features the selected articles from the 25th annual symposiums Connecticut Microelectronics and Optoelectronics Consortium (CMOC), that focus on micro/nano-electronics and optoelectronics/Nano-photonics, to cover not only the technologies, but also the applications ranging from biosensors/nano-biosystems, to cyber security.
Enabling materials research involving growth and characterization of novel devices such as multi-bit nonvolatile random access memory with fast erase, high performance circuits, and their potential applications in developing new high-speed systems. Other articles focus on emerging nanoelectronic devices including topological insulators, spatial wavefunction switching (SWS) FETs as compact high-speed 2-bit SRAM circuits, quantum dot channel (QDC) FETs. Fundamental work on critical layer thickness in ZnSe/GaAs and other material systems impacts electronic and photonic devise integrating mismatched layers are also reported. While another article investigates linearly graded GaAsP-GaAs system with emphasis on strain relaxation.
Based on these technologies, area of analyzes multiple junction solar cells using semiconductors with different energy gaps, as a possible application were also featured; Pixel characterization of protein-based retinal implant, as well as a low-power and low-data-rate (100 kbps) fully integrated CMOS impulse radio ultra-wideband (IR-UWB) transmitter were investigated as a potential candidate for biomedical application. While other articles looked at carbon nanofibers/nanotubes for electrochemical sensing. In the area of cyber security, two articles present encrypted electron beam lithography fabricated nanostructures for authentication and nano-signatures for the identification of authentic electronic components.
In summary, papers presented in this volume involve various aspects of high performance materials and devices for implementing high-speed electronic systems.
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