Автор: Park Jae Название: Interfacial Reactions in Nickel/titanium Ohmic Contacts to N-type Silicon Carbide ISBN: 0530001861 ISBN-13(EAN): 9780530001869 Издательство: Неизвестно Рейтинг: Цена: 80930.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: Dissertation Discovery Company and University of Florida are dedicated to making scholarly works more discoverable and accessible throughout the world. This dissertation, "Interfacial reactions in nickel/titanium ohmic contacts to n-type silicon carbide" by Jae Hyun Park, was obtained from University of Florida and is being sold with permission from the author. A digital copy of this work may also be found in the university's institutional repository, IR@UF. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation.
Автор: Park Jae Название: Interfacial Reactions in Nickel/titanium Ohmic Contacts to N-type Silicon Carbide ISBN: 053000187X ISBN-13(EAN): 9780530001876 Издательство: Неизвестно Рейтинг: Цена: 114030.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: Dissertation Discovery Company and University of Florida are dedicated to making scholarly works more discoverable and accessible throughout the world. This dissertation, "Interfacial reactions in nickel/titanium ohmic contacts to n-type silicon carbide" by Jae Hyun Park, was obtained from University of Florida and is being sold with permission from the author. A digital copy of this work may also be found in the university's institutional repository, IR@UF. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation.
Автор: George Gibbs Название: Physics and Technology of Silicon Carbide Devices ISBN: 1681176432 ISBN-13(EAN): 9781681176437 Издательство: Gazelle Book Services Рейтинг: Цена: 217350.00 T Наличие на складе: Невозможна поставка. Описание: "Silicon (Si) is by far the most widely used semiconductor material for power devices. On the other hand, Si-based power devices are approaching their material limits, which has provoked a lot of efforts to find alternatives to Si-based power devices for better performance. With the rapid innovations and developments in the semiconductor industry, Silicon Carbide (SiC) power devices have progressed from immature prototypes in laboratories to a viable alternative to Si-based power devices in high-efficiency and high-power density applications. SiC devices have numerous persuasive advantageshigh-breakdown voltage, high-operating electric field, high-operating temperature, high-switching frequency and low losses. Silicon Carbide (SiC) devices belong to the so-called wide band gap semiconductor group, which offers a number of attractive characteristics for high voltage power semiconductors when compared to commonly used silicon (Si). Recently, some SiC power devices, for example, Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effecttransistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. Physics and Technology of Silicon Carbide Devices abundantly describes recent technologies on manufacturing, processing, characterization, modeling, etc. for SiC devices."
Автор: Fraley Bill Название: Silicon Carbide Devices and Technology ISBN: 1632384140 ISBN-13(EAN): 9781632384140 Издательство: Неизвестно Цена: 171660.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This book elaborately discusses the silicon carbide devices and their technology. Lately, a few Silicon Carbide (SiC ) power devices like metal-oxide-semiconductor field-effect-transistors (MOSFETs), Schottky-barrier diodes (SBDs), junction FETs (JFETs), and their combined modules have been introduced in the market. However, to securely supply them and decrease their cost, further enhancements for material characterizations as well as for device processing are still required. This book comprehensively elucidates current technologies on processing, modeling, characterization, manufacturing, and other important aspects of SiC devices. The aim of this book is to serve as a helpful source of information for advancements in SiC devices.
Автор: Morath Christain M. Название: Electrical Characterization of Non-Implanted 4h-Silicon Carbide ISBN: 1286864267 ISBN-13(EAN): 9781286864265 Издательство: Неизвестно Рейтинг: Цена: 71050.00 T Наличие на складе: Есть у поставщика Поставка под заказ.
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