Modeling Bipolar Power Semiconductor Devices, Tanya K. Gachovska, Jerry L. Hudgins, Enrico Santi, Angus Bryant

Автор: Tanya Kirilova Gachovska, Jerry Hudgins, Bin Du, Enrico Santi
Название: Transient Electro-Thermal Modeling on Power Semiconductor Devices
ISBN: 1627051899 ISBN-13(EAN): 9781627051897
Издательство: Mare Nostrum (Eurospan)
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Цена: 36030.00 T
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Описание: This book presents physics-based electro-thermal models of bipolar power semiconductor devices including their packages, and describes their implementation in MATLAB and Simulink. It is a continuation of our first book Modeling of Bipolar Power Semiconductor Devices. The device electrical models are developed by subdividing the devices into different regions and the operations in each region, along with the interactions at the interfaces, are analyzed using the basic semiconductor physics equations that govern device behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as junction voltages and carrier distribution in different regions of the device, can be obtained using the models.The instantaneous dissipated power, calculated using the electrical device models, serves as input to the thermal model (RC network with constant and nonconstant thermal resistance and thermal heat capacity, or Fourier thermal model) of the entire module or package, which computes the junction temperature of the device. Once an updated junction temperature is calculated, the temperature-dependent semiconductor material parameters are re-calculated and used with the device electrical model in the next time-step of the simulation.The physics-based electro-thermal models can be used for optimizing device and package design and also for validating extracted parameters of the devices. The thermal model can be used alone for monitoring the junction temperature of a power semiconductor device, and the resulting simulation results used as an indicator of the health and reliability of the semiconductor power device.

Автор: Thomas Sch?pers
Название: Superconductor/Semiconductor Junctions
ISBN: 364207586X ISBN-13(EAN): 9783642075865
Издательство: Springer
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Цена: 130590.00 T
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Описание: This book, featuring the most comprehensive treatment of Josephson junctions ever published, describes superconductor/two-dimensional-electron-gas (2DEG) structures, providing a better understanding of their transport properties.

Автор: Vladislav A. Vashchenko; V. F. Sinkevitch
Название: Physical Limitations of Semiconductor Devices
ISBN: 1441945059 ISBN-13(EAN): 9781441945051
Издательство: Springer
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Цена: 121890.00 T
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Описание: Since the beginning of semiconductor era in microelectronics the methodology of reliability assessment became a well established area. In most cases the reliability assessment involves statistical methods for safe operating area and long term re- ability parameters at the development of semiconductor processes, components and systems. At the same time in case of catastrophic failures at any development phase the major practical method is failure analysis (FA). However FA is mainly dealing with detection of consequences of some irreversible event that already happened. This book is focused on the most important and the less summarized reliability aspects. Among them: catastrophic failures, impact of local structural inhomo- neities, major principles of physical limitation of safe-operating area (SOA), physical mechanisms of the current instability, filamentation and conductivity modulation in particular device types and architectures. Specifically, the similar principles and regularities are discussed for elect- static discharge (ESD) protection devices, treating them as a particular case of pulsed power devices. Thus both the most intriguing applications and reliability problems in case of the discrete and the integrated components are covered in this book.

Автор: Grasser Tibor, Selberherr Siegfried
Название: Simulation of Semiconductor Processes and Devices 2007 / SISPAD 2007
ISBN: 3211728600 ISBN-13(EAN): 9783211728604
Издательство: Springer
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Цена: 172350.00 T
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Описание: This volume will contain the proceedings of the 12th edition of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2007), which will take place in Vienna, Austria, on September 25-27, 2007. Like the previous meetings, SISPAD 2007 will provide a world-wide forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance. Topics covered will be device simulation, including transport in nano-structures models of VLSI device scaling limits, quantum effects, and novel devices process simulation, including both continuum and atomistic approaches equipment, topography, and lithography simulation interconnect modeling and algorithms including noise and parasitic effects compact device modeling for circuit simulation integration of circuit and device simulation user interfaces and visualization high performance computing, numerical methods and algorithms mesh generation and adaptation simulation of such devices as microsensor and optoelectronics devices benchmarking, calibration, and verification of simulators.

Автор: Fausto Rossi
Название: Theory of Semiconductor Quantum Devices
ISBN: 3642266819 ISBN-13(EAN): 9783642266812
Издательство: Springer
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Цена: 148010.00 T
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Описание: Primary goal of this book is to provide a cohesive description of the vast field of semiconductor quantum devices, with special emphasis on basic quantum-mechanical phenomena governing the electro-optical response of new-generation nanomaterials. The book will cover within a common language different types of optoelectric nanodevices, including quantum-cascade laser sources and detectors, few-electron/exiton quantum devices, and semiconductor-based quantum logic gates. The distinguishing feature of the present volume is a unified microscopic treatment of quantum-transport and coherent-optics phenomena on ultrasmall space- and time-scales, as well as of their semiclassical counterparts.

Автор: Antonio Luque; Alexander Virgil Mellor
Название: Photon Absorption Models in Nanostructured Semiconductor Solar Cells and Devices
ISBN: 3319145371 ISBN-13(EAN): 9783319145372
Издательство: Springer
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Цена: 47880.00 T
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Описание: Introduction.- Calculations derived of the single band effective mass Equation.- Four band approximation.- Interband optical absorption in quantum well solar cells.- Conclusions.

Автор: Alejandro A. Franco; Marie Liesse Doublet; Wolfgan
Название: Physical Multiscale Modeling and Numerical Simulation of Electrochemical Devices for Energy Conversion and Storage
ISBN: 1447156765 ISBN-13(EAN): 9781447156765
Издательство: Springer
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Цена: 104480.00 T
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Описание: This book reviews the use of innovative physical multiscale modeling methods to deeply understand the electrochemical mechanisms and numerically simulate the structure and properties of electrochemical devices for energy storage and conversion.

Автор: Kwasinski
Название: Microgrids and other Local Area Power and Energy Systems
ISBN: 1107012791 ISBN-13(EAN): 9781107012790
Издательство: Cambridge Academ
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Цена: 91860.00 T
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Описание: Covering all aspects of microgrid design, including formation, integration, planning, composition and operation, this self-contained resource is ideal for graduate students and professionals in electrical, mechanical and chemical engineering and materials science.

Автор: M. Parans Paranthaman; Winnie Wong-Ng; Raghu N. Bh
Название: Semiconductor Materials for Solar Photovoltaic Cells
ISBN: 3319343246 ISBN-13(EAN): 9783319343242
Издательство: Springer
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Цена: 87060.00 T
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Описание:

Preface.- Introduction to Solar Cells.- c-Si Based Solar Cells.- Amorphous Si Thin Film Solar Cells.- Single Crystalline Si Thin Film Solar Cells.- II-VI (CdTe) Based Thin Film Solar Cells.- II-II-VI (CuInSe2) Based Thin Film Solar Cells.- III-V (GaAs) Based Thin Film Solar Cells.- Earth Abundant Cu2ZnSn(S, Se)4 (CZTSS) Solar Cells.- Dye Sensitized Solid-State Heterojunction Solar Cells.- Polymer-Inorganic Based Solar Cells.- Organic Solar Cells.- Photoelectrochemical Solar Cells.- Other Semiconductor Materials.- Index.

Автор: Rajesh Karki; Roy Billinton; Ajit Kumar Verma
Название: Reliability Modeling and Analysis of Smart Power Systems
ISBN: 8132229088 ISBN-13(EAN): 9788132229087
Издательство: Springer
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Цена: 104480.00 T
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Описание: The volume presents the research work in understanding, modeling and quantifying the risks associated with different ways of implementing smart grid technology in power systems in order to plan and operate a modern power system with an acceptable level of reliability.

Автор: Mathias Schubert
Название: Infrared Ellipsometry on Semiconductor Layer Structures
ISBN: 3642062288 ISBN-13(EAN): 9783642062285
Издательство: Springer
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Цена: 191550.00 T
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Описание: The study of semiconductor-layer structures using infrared ellipsometry is a rapidly growing field within optical spectroscopy.

Автор: Winfried M?nch
Название: Electronic Properties of Semiconductor Interfaces
ISBN: 3642057780 ISBN-13(EAN): 9783642057786
Издательство: Springer
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Цена: 156720.00 T
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Описание: Using the continuum of interface-induced gap states (IFIGS) as a unifying theme, Monch explains the band-structure lineup at all types of semiconductor interfaces.