Ultra and Extremely Low Frequency Electromagnetic, Namrata Saini
Автор: Jamie Hicks Название: Preparation, Characterisation and Reactivity of Low Oxidation State d-Block Metal Complexes Stabilised by Extremely Bulky Amide Ligands ISBN: 9811029040 ISBN-13(EAN): 9789811029042 Издательство: Springer Рейтинг: Цена: 111790.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This thesis describes the synthesis and characterization of numerous metal-metal bonded complexes that are stabilized by extremely bulky amide ligands. It provides a comprehensive overview of the field, including discussions on groundbreaking complexes and reactions, before presenting in detail, exciting new findings from the PhD studies. The thesis appeals to researchers, professors and chemistry undergraduates with an interest in inorganic and/or organometallic chemistry.
Автор: Vadim Surkov; Masashi Hayakawa Название: Ultra and Extremely Low Frequency Electromagnetic Fields ISBN: 4431563334 ISBN-13(EAN): 9784431563334 Издательство: Springer Рейтинг: Цена: 95770.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This book examines how different sources and physical mechanisms affect ULF/ELF effects. It investigates non seismic prediction of impending natural disasters such as earthquakes, volcano eruptions and tsunamis.
Автор: Vadim Surkov; Masashi Hayakawa Название: Ultra and Extremely Low Frequency Electromagnetic Fields ISBN: 443154366X ISBN-13(EAN): 9784431543664 Издательство: Springer Рейтинг: Цена: 139750.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This book examines how different sources and physical mechanisms affect ULF/ELF effects. It investigates non seismic prediction of impending natural disasters such as earthquakes, volcano eruptions and tsunamis.
Автор: Clelland Mike Название: Ultralight Backpackin` Tips: 153 Amazing and Inexpensive Tips for Extremely Lightweight Camping ISBN: 0762763841 ISBN-13(EAN): 9780762763849 Издательство: Rowman & Littlefield Publishers Рейтинг: Цена: 16880.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: Short, to the point, and humorously illustrated by famed outdoor illustrator Mike Clelland, this book presents everything hikers and backpackers need to be safe, comfortable, and well-fed while carrying a very small and lightweight pack.
Автор: Kerz Joe Название: Extremely Inappropriate Dad Jokes: More Than 300 Hazardous Jokes, Side-Splitting Puns, & Hilarious One-Liners to Make You the Master of Questionable C ISBN: 1631585142 ISBN-13(EAN): 9781631585142 Издательство: Неизвестно Цена: 9190.00 T Наличие на складе: Невозможна поставка. Описание: What to get dad for a gift? What will make him laugh? What will bring the family together? Hundreds and hundreds of questionable jokes that only a dad will love to tell Bring your dad jokes to the next level with this questionable collection of inappropriate and dirty puns, riddles, and one-liners Not for the faint of heart, this book will make you the king of the barroom conversation and the bane of your family get-togethers They'll never want to take you anywhere after you break out jokes such as:
What has a hundred balls and screws old women? Bingo
Why didn't the toilet paper cross the road? It got stuck in a crack.
What's hot and pink and wet? A pig in a hot tub
What do you call an Italian hooker? A pasta-tute
And many, many more
Don't be afraid to crack up a little with Extremely Inappropriate Dad Jokes
Автор: Weiser Douglas Название: A Physical MOSFET Model Applicable to Extremely Scaled CMOS IC Design ISBN: 0530007967 ISBN-13(EAN): 9780530007960 Издательство: Неизвестно Рейтинг: Цена: 80930.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: Abstract: A process-based model (UFET) for deep-submicron bulk-silicon MOSFETs is developed and verified with numerical device simulations and measured data. The charge-based model is physical with accountings for the predominant short-channel (e.g., charge sharing, drain-induced threshold reduction and velocity saturation) and extremely scaled-technology (i.e., energy quantization and polysilicon-gate depletion) effects in MOSFETs. The key to UFET is the characterization of the bias-dependent two-dimensional regions near the source/ drain junctions which can extend over a significant fraction of the metallurgical channel length. When these two-dimensional regions near the junctions are modeled, the physical charge-sheet model can be applied to the remaining "quasi-two- dimensional" channel length to define the channel current and terminal charges, without resorting to empiricism to account for the short-channel effects. Special attention paid to continuity in the derivation of the model formalism yields a physical C-infinity model applicable to analog and digital CMOS circuit design. The small number of physical, process-based parameters simplifies the model calibration, and renders the model suitable for predictive device/circuit simulation, statistical simulations and circuit sensitivity analyses based on known or presumed process variations. Dissertation Discovery Company and University of Florida are dedicated to making scholarly works more discoverable and accessible throughout the world. This dissertation, "A Physical MOSFET Model Applicable to Extremely Scaled CMOS IC Design" by Douglas Aaron Weiser, was obtained from University of Florida and is being sold with permission from the author. A digital copy of this work may also be found in the university's institutional repository, IR@UF. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation.
