Cristiano Calligaro; Umberto Gatti; Rad-hard Semiconductor Memories 9788770220200

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Автор: Cristiano Calligaro; Umberto Gatti;
Название: Rad-hard Semiconductor Memories
Перевод названия: Криштиану Каллигару: Полупроводниковые элементы памяти Rad-Hard
ISBN: 9788770220200
Издательство: Taylor&Francis
Классификация:

Электротехническое машиностроение

Электронные устройства и материалы

ISBN-10: 8770220204
Обложка/Формат: Hardcover
Страницы: 225
Вес: 0.76 кг.
Дата издания: 30.11.2018
Серия: River publishers series in electronic materials and devices
Язык: English
Размер: 234 x 156 x 24
Читательская аудитория: Professional & vocational
Ключевые слова: Electronic devices & materials
Рейтинг:
Поставляется из: Европейский союз
Описание: Rad-hard Semiconductor Memories is intended for researchers and professionals interested in understanding how to design and make a preliminary evaluation of rad-hard semiconductor memories, making leverage on standard CMOS manufacturing processes available from different silicon foundries and using different technology nodes.In the first part of the book, a preliminary overview of the effects of radiation in space, with a specific focus on memories, will be conducted to enable the reader to understand why specific design solutions are adopted to mitigate hard and soft errors. The second part will be devoted to RHBD (Radiation Hardening by Design) techniques for semiconductor components with a specific focus on memories. The approach will follow a top-down scheme starting from RHBD at architectural level (how to build a rad-hard floor-plan), at circuit level (how to mitigate radiation effects by handling transistors in the proper way) and at layout level (how to shape a layout to mitigate radiation effects).After the description of the mitigation techniques, the book enters in the core of the topic covering SRAMs (synchronous, asynchronous, single port and dual port) and PROMs (based on AntiFuse OTP technologies), describing how to design a rad-hard flash memory and fostering RHBD toward emerging memories like ReRAM. The last part will be a leap into emerging memories at a very early stage, not yet ready for industrial use in silicon but candidates to become an option for the next wave of rad-hard components.Technical topics discussed in the book include:Radiation effects on semiconductor components (TID, SEE)Radiation Hardening by Design (RHBD) TechniquesRad-hard SRAMsRad-hard PROMsRad-hard Flash NVMsRad-hard ReRAMsRad-hard emerging technologies

Rad-hard Semiconductor Memories, Cristiano Calligaro; Umberto Gatti;