Wide Bandgap Materials for Power Electronic Applications: Materials, Devices, and Applications, Peter Wellmann, Noboru Ohtani, Roland Rupp
Автор: J.M. Powers Название: Dental Materials: Foundations and Applications, 11 ed. ISBN: 0323316379 ISBN-13(EAN): 9780323316378 Издательство: Elsevier Science Рейтинг: Цена: 81960.00 T Наличие на складе: Поставка под заказ. Описание: Get an in-depth understanding of the dental materials and tasks that dental professionals encounter every day with Dental Materials: Foundations and Applications, 11th Edition. Trusted for nearly 40 years, Powers and Wataha's text walks readers through the nature, categories, and uses of clinical and laboratory dental materials in use today. Increased coverage of foundational basics and clinical applications and an expanded art program help make complex content easier to grasp.
If you're looking to effectively stay on top of the rapidly developing field of dental materials, look no further than this proven text. Comprehensive and cutting-edge content describes the latest materials commonly used in dental practice, including those in esthetics, ceramics, dental implants, and impressions. Approximately 500 illustrations and photographs make it easier to understand properties and differences in both materials and specific types of products.
Review questions provide an excellent study tool with 20 to 30 self-test questions in each chapter. Quick Review boxes summarize the material in each chapter. Note boxes highlight key points and important terminology throughout the text.
Key terms are bolded at their initial mention in the text and defined in the glossary. Expert authors are well recognized in the fields of dental materials, oral biomaterials, and restorative dentistry. A logical and consistent format sets up a solid foundation before progressing into discussions of specific materials, moving from the more common and simple applications such as composites to more specialized areas such as polymers and dental implants.
Learning objectives in each chapter focus readers' attention on essential information. Supplemental readings in each chapter cite texts and journal articles for further research and study. Conversion Factors on the inside back cover provides a list of common metric conversions.
NEW! Foundations and Applications subtitle emphasizes material basics and clinical applications to mirror the educational emphasis. NEW! More clinical photos and conceptual illustrations help bring often-complex material into context and facilitate comprehension.
Автор: Mohammad Matin, Abdul A.S. Awwal, Achyut K. Dutta Название: Wide Bandgap Power Devices and Applications ISBN: 1510603050 ISBN-13(EAN): 9781510603059 Издательство: Mare Nostrum (Eurospan) Рейтинг: Цена: 60990.00 T Наличие на складе: Невозможна поставка. Описание: Proceedings of SPIE offer access to the latest innovations in research and technology and are among the most cited references in patent literature.
Автор: Mohammad Matin, Srabanti Chowdhury, Achyut Dutta Название: Wide Bandgap Power Devices and Applications II ISBN: 151061219X ISBN-13(EAN): 9781510612198 Издательство: Mare Nostrum (Eurospan) Рейтинг: Цена: 60990.00 T Наличие на складе: Невозможна поставка. Описание: Proceedings of SPIE present the original research papers presented at SPIE conferences and other high-quality conferences in the broad-ranging fields of optics and photonics. These books provide prompt access to the latest innovations in research and technology in their respective fields. Proceedings of SPIE are among the most cited references in patent literature.
Автор: Mohammad Matin, Srabanti Chowdhury, Achyut Dutta Название: Wide Bandgap Power and Energy Devices and Applications III ISBN: 1510620796 ISBN-13(EAN): 9781510620797 Издательство: Mare Nostrum (Eurospan) Рейтинг: Цена: 71150.00 T Наличие на складе: Невозможна поставка. Описание: Proceedings of SPIE present the original research papers presented at SPIE conferences and other high-quality conferences in the broad-ranging fields of optics and photonics. These books provide prompt access to the latest innovations in research and technology in their respective fields. Proceedings of SPIE are among the most cited references in patent literature.
Автор: Igor A Sokolov, Mikhail A Bryushinin Название: Optically Induced Space-Charge Gratings in Wide-Bandgap Semiconductors: Techniques & Applications ISBN: 153611944X ISBN-13(EAN): 9781536119442 Издательство: Nova Science Рейтинг: Цена: 196410.00 T Наличие на складе: Невозможна поставка. Описание: The photorefractive effect is one of the highest-sensitivity non-linear optical effects. The rate of progress in the development of photorefractive applications has been limited by the rate in which breakthroughs in materials science have supplied better wide-bandgap semiconductor materials. The last few years have seen an upsurge of interest in characterisation of new wide-bandgap semiconductor materials. Holographic recording in wide-bandgap photorefractive materials is of particular interest from the scientific and practical point of view. Such a recording includes the stage of space charge formation, which is associated with the spatial redistribution of photoinduced carriers. A number of new methods studying the dynamics of space charge and photoconductivity in wide-bandgap semiconductors were proposed during recent years. This book deals with the so-called non-steady-state photo-EMF effect and its applications for material characterization and adaptive interferometry. The first part of the book discusses the theory of the non-steady-state photo-EMF effect. The second part of the book describes the application of the non-steady-state photo-EMF effect for the investigation of wide- bandgap semiconductors and nanostructured materials, including photorefractive sillenites grown in the air and argon atmosphere, molecular crystal SnS2, boron nitride crystals, nano-sized GaN and Se within porous matrices, SiC, AlN and Ga2O3 crystals. The third part of the book presents a theoretical analysis and experimental investigation of the non-steady-state photoelectromotive force and two-wave mixing in photorefractive crystals under frequency-modulated illumination. The final part of the book describes adaptive interferometers using the effect of the non-steady-state photo-EMF. This book has been written to be accessible to specialists working in solid state physics, semiconductor physics and adaptive inter-ferometry, laser-based ultrasound. The subject areas include: Photorefractive non-linear optics, dynamic holography, interferometry, wide-bandgap semiconductors and laser-doppler velocimetry. References to over 200 original papers represent the personal selections of the authors, who are grateful to all of their colleagues for their assistance and contributions. The authors acknowledge the financial support from the Russian Science Foundation (grant 15-12-00027).
Автор: Liao, Meiyong Название: Ultra-wide Bandgap Semiconductor Materials ISBN: 0128154683 ISBN-13(EAN): 9780128154687 Издательство: Elsevier Science Рейтинг: Цена: 206610.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание:
Ultra-wide Bandgap Semiconductors (UWBG) covers the most recent progress in UWBG materials, including sections on high-Al-content AlGaN, diamond, B-Ga2O3, and boron nitrides. The coverage of these materials is comprehensive, addressing materials growth, physics properties, doping, device design, fabrication and performance. The most relevant and important applications are covered, including power electronics, RF electronics and DUV optoelectronics. There is also a chapter on novel structures based on UWBG, such as the heterojunctions, the low-dimensional structures, and their devices. This book is ideal for materials scientists and engineers in academia and R&D searching for materials superior to silicon carbide and gallium nitride.
Provides a one-stop resource on the most promising ultra-wide bandgap semiconducting materials, including high-Al-content AlGaN, diamond, β-Ga2O3, boron nitrides, and low-dimensional materials
Presents comprehensive coverage, from materials growth and properties, to device design, fabrication and performance
Features the most relevant applications, including power electronics, RF electronics and DUV optoelectronics
Автор: Baliga, B. Jayant Название: Wide bandgap Semiconductor Power Devices ISBN: 0081023065 ISBN-13(EAN): 9780081023068 Издательство: Elsevier Science Рейтинг: Цена: 207730.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание:
Wide bandgap semiconductor power devices have been under investigation for more than 35 years. During the last 10 years, gallium nitride and silicon carbide power devices have become commercially available. There has been a flurry of activity around the world to exploit these devices for commercial applications.
Wide Bandgap Semiconductor Power Devices provides readers with a single resource to understand why these devices are superior to the existing silicon power devices. It lays the groundwork for understanding of the array of applications for these devices and the anticipated benefits in energy savings.
Founder of the Power Semiconductor Research Center at North Carolina State University and creator of the IGBT device, Dr. B. Jayant Baliga is one of the highest regarded experts in the field. In Wide bandgap Semiconductor Power Devices Dr. Baliga leads a team of experts to comprehensively review the materials, device physics, design considerations and most relevant applications for these devices.
Covers power electronic devices comprehensively including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications
Addresses the key challenges towards the realization of wide bandgap power electronic devices including materials defects and their role in performance and reliability
Provides benefits of wide bandgap semiconductors including opportunities for cost reduction and social impact
Автор: Suganuma, Katsuaki Название: Wide Bandgap Power Semiconductor Packaging ISBN: 0081020945 ISBN-13(EAN): 9780081020944 Издательство: Elsevier Science Рейтинг: Цена: 185270.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: Wide Bandgap Power Semiconductor Packaging: Materials, Components, and Reliability addresses the key challenges that WBG power semiconductors face during integration, including heat resistance, heat dissipation and thermal stress, noise reduction at high frequency and discrete components, and challenges in interfacing, metallization, plating, bonding and wiring. Experts on the topic present the latest research on materials, components and methods of reliability and evaluation for WBG power semiconductors and suggest solutions to pave the way for integration. As wide bandgap (WBG) power semiconductors, SiC and GaN, are the latest promising electric conversion devices because of their excellent features, such as high breakdown voltage, high frequency capability, and high heat-resistance beyond 200 C, this book is a timely resource on the topic.
Автор: Hao Название: Nitride Wide Bandgap Semiconductor ISBN: 1498745121 ISBN-13(EAN): 9781498745123 Издательство: Taylor&Francis Рейтинг: Цена: 178640.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs).
Автор: Takahashi Название: Wide Bandgap Semiconductors ISBN: 3540472347 ISBN-13(EAN): 9783540472346 Издательство: Springer Рейтинг: Цена: 174150.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This book offers a comprehensive overview of the development, current state and future prospects of wide bandgap semiconductor materials and related
optoelectronics devices. It includes an overview of recent developments in III-V nitride semiconductors, SiC, diamond, ZnO, II-VI materials and related devices including AIGaN/GaN
FET, UV LDs, white light LEDs, and cold electron emitters. With 901 references, 333 figures and 21 tables, this book will serve as a one-stop source of knowledge on wide bandgap
semiconductors and related optoelectronics devices.
After a review of the basic physics of WBGS and the rele
ance of the physical properties to the development of commercial devices, the book addresses the applications of WBGS devices for solid-state white-light illumination, medicine and
gigahertz-high power telecommunications. In addition, description of recent development in the growth and applications of nitride semiconductors are complemented by chapters on the
properties and device applications of SiC, diamond thin films, doping of ZnO, II-IVs and the novel BeZnSeTe/BAlGaAs material systems. Practical issues and problems such as the
effect of defects on device performance are highlighted and solutions proposed based on recent studies.
Автор: Wang Fei, Zhang Zheyu, Jones Edward A. Название: Characterization of Wide Bandgap Power Semiconductor Devices ISBN: 1785614916 ISBN-13(EAN): 9781785614910 Издательство: Неизвестно Цена: 171660.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание:
Based on the authors' years of extensive experience, this is an authoritative overview of Wide Bandgap (WBG) device characterization. It provides essential tools to assist researchers, advanced students and practicing engineers in performing both static and dynamic characterization of WBG devices, particularly those based on using silicon carbide (SiC) and gallium nitride (GaN) power semiconductors. The book presents practical considerations for real applications, and includes examples of applying the described methodology.
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