Field Effect Devices, Pierret,Robert

Автор: Zainalabedin Navabi
Название: Digital Design and Implementation with Field Programmable Devices
ISBN: 1489981152 ISBN-13(EAN): 9781489981158
Издательство: Springer
Рейтинг:
Цена: 121890.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: A designer wanting to design with programmable devices must understand digital system design at the RT (Register Transfer) level, circuitry and programming of programmable devices, digital design methodologies, use of hardware description languages in design, design tools and environments;

Автор: Seongil Im, Youn-Gyoung Chang, Jae Hoon Kim
Название: Photo-Excited Charge Collection Spectroscopy: Probing the traps in field-effect transistors (SpringerBriefs in Physics)
ISBN: 9400763913 ISBN-13(EAN): 9789400763913
Издательство: Springer
Рейтинг:
Цена: 43530.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Solid state field-effect devices such as organic and inorganic-channel thin-film transistors (TFTs) have been expected to promote advances in display and sensor electronics.

Автор: Ioannis Kymissis
Название: Organic Field Effect Transistors
ISBN: 1441947116 ISBN-13(EAN): 9781441947116
Издательство: Springer
Рейтинг:
Цена: 104480.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: As a basic introduction to the subject for practitioners, this text will also be of interest to researchers looking for references that are not part of their subject area, focusing on materials and techniques useful for making integrated circuits.

Автор: Valizadeh Pouya
Название: Field Effect Transistors, a Comprehensive Overview
ISBN: 1119155495 ISBN-13(EAN): 9781119155492
Издательство: Wiley
Рейтинг:
Цена: 121390.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book discusses modern-day Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) and future trends of transistor devices. This book provides an overview of Field Effect Transistors (FETs) by discussing the basic principles of FETs and exploring the latest technological developments in the field.

Автор: Supriya Karmakar
Название: Novel Three-state Quantum Dot Gate Field Effect Transistor
ISBN: 8132216342 ISBN-13(EAN): 9788132216346
Издательство: Springer
Рейтинг:
Цена: 121110.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book explores fabrication and circuit modeling of quantum dot gate field effect transistor (QDGFET) and quantum dot gate NMOS inverter, introduces a circuit model of QDGFET based on Berkley Short Channel IGFET model and simulation of advanced circuits.

Автор: Lining Zhang; Mansun Chan
Название: Tunneling Field Effect Transistor Technology
ISBN: 3319316516 ISBN-13(EAN): 9783319316512
Издательство: Springer
Рейтинг:
Цена: 107130.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency.

Автор: Dae Mann Kim; Yoon-Ha Jeong
Название: Nanowire Field Effect Transistors: Principles and Applications
ISBN: 1461481236 ISBN-13(EAN): 9781461481232
Издательство: Springer
Рейтинг:
Цена: 113190.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book covers the basic physics and electronics leading to the conceptual understanding of nanowire field effect transistors (NWFET) and its practical aspects. It discusses mainstream applications and emphasizes their basic concepts.

Автор: Jiandong Sun
Название: Field-effect Self-mixing Terahertz Detectors
ISBN: 3662486792 ISBN-13(EAN): 9783662486795
Издательство: Springer
Рейтинг:
Цена: 93160.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: A comprehensive device model considering both spatialdistributions of the terahertz field and the field-effect self-mixing factorhas been constructed for the first time in the thesis.

Автор: Ting Lei
Название: Design, Synthesis, and Structure-Property Relationship Study of Polymer Field-Effect Transistors
ISBN: 3662456664 ISBN-13(EAN): 9783662456668
Издательство: Springer
Рейтинг:
Цена: 93160.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The book summarizes Ting Lei`s PhD study on a series of novel conjugated polymers for field-effect transistors (FETs). Studies contain many aspects of polymer FETs, including backbone design, side-chain engineering, property study, conformation effects and device fabrication.

Автор: Supriya Karmakar
Название: Novel Three-state Quantum Dot Gate Field Effect Transistor
ISBN: 8132234901 ISBN-13(EAN): 9788132234906
Издательство: Springer
Рейтинг:
Цена: 95770.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book explores fabrication and circuit modeling of quantum dot gate field effect transistor (QDGFET) and quantum dot gate NMOS inverter, introduces a circuit model of QDGFET based on Berkley Short Channel IGFET model and simulation of advanced circuits.

Автор: Amit Chaudhry
Название: Fundamentals of Nanoscaled Field Effect Transistors
ISBN: 1493944827 ISBN-13(EAN): 9781493944828
Издательство: Springer
Рейтинг:
Цена: 113180.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book covers principles and theory of nanoscale transistors, including quantum mechanical tunneling and inversion layer quantization and solutions like high-k and strained-Si technology, alternate structures and graphene technology. Includes case studies.

Автор: Sun Jiandong
Название: Field-Effect Self-Mixing Terahertz Detectors
ISBN: 3662569485 ISBN-13(EAN): 9783662569481
Издательство: Springer
Цена: 46570.00 T
Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: A comprehensive device model considering both spatialdistributions of the terahertz field and the field-effect self-mixing factorhas been constructed for the first time in the thesis.