Автор: G. Herrmann Название: Modeling of Defects and Fracture Mechanics ISBN: 3211824871 ISBN-13(EAN): 9783211824870 Издательство: Springer Рейтинг: Цена: 87070.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: All materials contain numerous defects, such as microcracks, microvoids, inhomogeneities, dislocations, etc., which precede possible fracture. This volume contains some introductory material, aspects of fracture mechanics, the theory of crystal defects, computational micromechanics, and the heterogenization methodology.
Автор: George C. Sih; H. Zorski Название: Defects and Fracture ISBN: 9401175225 ISBN-13(EAN): 9789401175227 Издательство: Springer Рейтинг: Цена: 46570.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: Proceedings of the First International Symposium on Defects and Fracture, Tuczno, Poland, October 13-17, 1980
Автор: Gianfranco Pacchioni; Linards Skuja; David L. Gris Название: Defects in SiO2 and Related Dielectrics: Science and Technology ISBN: 0792366859 ISBN-13(EAN): 9780792366850 Издательство: Springer Рейтинг: Цена: 278580.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: Silicon dioxide plays a central role in most contemporary electronic and photonic technologies. This book provides a general description of the influence that point defects have on the global properties of the bulk material and their spectroscopic characterization through ESR and optical spectroscopy.
Автор: Richard Catlow Название: Defects and Disorder in Crystalline and Amorphous Solids ISBN: 0792326105 ISBN-13(EAN): 9780792326106 Издательство: Springer Рейтинг: Цена: 330750.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: Provides a unified approach to disorder in solids. This study includes coverage of the theoretical and structural concepts; basic properties; transport, thermodynamic and spectroscopic properties; theoretical and computational techniques; fast-ion conductors; and amorphous semiconductors.
Автор: Jacques Jupille; Geoff Thornton Название: Defects at Oxide Surfaces ISBN: 3319380192 ISBN-13(EAN): 9783319380193 Издательство: Springer Рейтинг: Цена: 104480.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This book presents the basics and characterization of defects at oxide surfaces. It provides a state-of-the-art review of the field, containing information to the various types of surface defects, describes analytical methods to study defects, their chemical activity and the catalytic reactivity of oxides.
Автор: Kipp van Schooten Название: Optically Active Charge Traps and Chemical Defects in Semiconducting Nanocrystals Probed by Pulsed Optically Detected Magnetic Resonance ISBN: 331903328X ISBN-13(EAN): 9783319033280 Издательство: Springer Рейтинг: Цена: 87060.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This book lays the groundwork for further use of Electron Spin Echo Envelop Modulation (ESEEM) and opens the possibility of highly precise chemical fingerprinting. It reveals an astonishingly long memory of spin coherence in semiconductor particles.
Автор: Michael Steger Название: Transition-Metal Defects in Silicon ISBN: 3642438083 ISBN-13(EAN): 9783642438080 Издательство: Springer Рейтинг: Цена: 87060.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This book demonstrates the power of isotopic enrichment for high-resolution spectroscopic characterization. It records properties of transition metal centers in silicon with unprecedented accuracy.
Автор: Bernard Pajot; Bernard Clerjaud Название: Optical Absorption of Impurities and Defects in Semiconducting Crystals ISBN: 3642430805 ISBN-13(EAN): 9783642430800 Издательство: Springer Рейтинг: Цена: 121890.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This volume outlines how absorption spectroscopy is important to the investigation of deep-level centers introduced in semiconductors and insulators. It also explains how vibrational spectroscopy determines the atomic structure and symmetry of complexes.
Автор: D. Walgraef Название: Patterns, Defects and Microstructures in Nonequilibrium Systems ISBN: 9024734797 ISBN-13(EAN): 9789024734795 Издательство: Springer Рейтинг: Цена: 266470.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: Proceedings of the NATO Advanced Research Workshop, Austin, Texas, USA, March 24-28, 1986
Автор: Moones Rahmandoust; Majid R. Ayatollahi Название: Characterization of Carbon Nanotube Based Composites under Consideration of Defects ISBN: 3319002503 ISBN-13(EAN): 9783319002507 Издательство: Springer Рейтинг: Цена: 130610.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: 1 Introduction.- 2 Carbon Nanotubes.- 3 Nanocomposites.- 4 CNT-based nanocomposites.- 5 CNT/FRP composites.- 6 Summary
Автор: Fang, Tsang-Tse Название: Elements of Structures and Defects of Crystalline Materials ISBN: 0128142685 ISBN-13(EAN): 9780128142684 Издательство: Elsevier Science Рейтинг: Цена: 158330.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание:
Elements of Structures and Defects of Crystalline Materials has been written to cover not only the fundamental principles behind structures and defects, but also to provide deep insights into understanding the relationships of properties, defect chemistry and processing of the concerned materials. Part One deals with structures, while Part Two covers defects. Since the knowledge of the electron configuration of elements is necessary for understanding the nature of chemical bonding, it is discussed in the opening chapter. Chapter Two then describes the bonding formation within the crystal structures of varied materials, with Chapter Three delving into how a material's structure is formed.
In view of the importance of the effects of the structure distortion on the material properties due to the fields, the related topics have been included in section 3.4. Moreover, several materials still under intensive investigation have been illustrated to provide deep insights into understanding the effects of the relationships of processing, structures and defects on the material properties.
The defects of materials are explored in Part II. Chapter 4 deals with the point defects of metal and ceramics. Chapter 5 covers the fundamentals of the characteristics of dislocations, wherein physics and the atomic mechanics of several issues have been described in detail. In view of the significant influence of the morphologies including size, shape and distribution of grains, phases on the microstructure evolution, and, in turn, the properties of materials, the final chapter focuses on the fundamentals of interface energies, including single phase (grain) boundary and interphase boundary.
Discusses the relationship between properties, defect chemistry and the processing of materials
Presents coverage of the fundamental principles behind structures and defects
Includes information on two-dimensional and three-dimensional imperfections in solids
Автор: Toshio Mura Название: Micromechanics of defects in solids ISBN: 9401185484 ISBN-13(EAN): 9789401185486 Издательство: Springer Рейтинг: Цена: 87070.00 T Наличие на складе: Есть у поставщика Поставка под заказ. Описание: This book sterns from a course on Micromechanics that I started about fifteen years ago at Northwestern University.
Казахстан, 010000 г. Астана, проспект Туран 43/5, НП2 (офис 2) ТОО "Логобук" Тел:+7 707 857-29-98 ,+7(7172) 65-23-70 www.logobook.kz
