Theory of Chemisorption, J. R. Smith

Автор: Bruce L. Yoder
Название: Steric Effects in the Chemisorption of Vibrationally Excited Methane on Nickel
ISBN: 366252161X ISBN-13(EAN): 9783662521618
Издательство: Springer
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Цена: 87060.00 T
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Описание: This book describes the investigation of an unknown steric effect in the reaction between a vibrationally excited methane molecule colliding with the surface of the nickel crystal, a discovery which could lead to improvements in commercial hydrogen production.

Автор: F. Ruette
Название: Quantum Chemistry Approaches to Chemisorption and Heterogeneous Catalysis
ISBN: 079231543X ISBN-13(EAN): 9780792315438
Издательство: Springer
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Цена: 214290.00 T
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Описание: In this book, a unified survey of the most important methods in theoretical chemistry applied to reactions and processes that occur on transition metal surfaces is presented together with a discussion of their advantages and limitations.

Автор: R.M. Lambert; Gianfranco Pacchioni
Название: Chemisorption and Reactivity on Supported Clusters and Thin Films:
ISBN: 0792344480 ISBN-13(EAN): 9780792344483
Издательство: Springer
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Цена: 309330.00 T
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Описание: Heterogeneous catalysis provides the backbone of the world`s chemical and oil industries. This volume describes experimental and theoretical approaches to the surface chemistry and catalytic behaviour of metals, metal oxides and metal/metal oxide systems.

Автор: Sydney G. Davison; Kenneth W. Sulston
Название: Green-Function Theory of Chemisorption
ISBN: 9400794312 ISBN-13(EAN): 9789400794313
Издательство: Springer
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Цена: 158380.00 T
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Описание: Because of its importance in such areas as catalysis and electronic-device fabrication, the subject of chemisorption is of interest to a wide range of surfacists in physics, chemistry, materials science, as well as chemical and electronic engineering.

Автор: T. Wolkenstein
Название: Electronic Processes on Semiconductor Surfaces during Chemisorption
ISBN: 0306110296 ISBN-13(EAN): 9780306110290
Издательство: Springer
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Цена: 104480.00 T
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Описание: The instability of these properties and their uncon- trollable alterations with temperature and under the influence of environmental conditions result in a lack of stability in the performance of semiconductor devices, hence the high percentage of waste in their industrial production.